STF18NM60
Abstract: 18nm60
Text: STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 Ω typ., 13 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on)
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STB18NM60ND,
STF18NM60ND,
STP18NM60ND,
STW18NM60ND
O-220FP,
O-220
O-247
STB18NM60ND
O-220FP
STF18NM60ND
STF18NM60
18nm60
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n-channel 250V power mosfet
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V pin diagram of MOSFET "Power MOSFET" ENHANCEMENT MOSFET TO-252 MOSFET circuit diagram of mosfet based power supply mosfet 250V 4A n channel enhancement mosfet n-channel mosfet transistor
Text: TSM5ND50 500V N-Channel Power MOSFET TO-252 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM5ND50
O-252
TSM5ND50
n-channel 250V power mosfet
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
pin diagram of MOSFET
"Power MOSFET"
ENHANCEMENT MOSFET
TO-252 MOSFET
circuit diagram of mosfet based power supply
mosfet 250V 4A
n channel enhancement mosfet
n-channel mosfet transistor
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marking E11 DIODE
Abstract: E11 diode
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking E11 DIODE
E11 diode
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marking diode f11
Abstract: No abstract text available
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking diode f11
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D5NK5
Abstract: p5nk50z p5nk50zfp P5NK50 d5nk50z P5NK5 p5nk STP5NK50ZFP
Text: STP5NK50Z - STP5NK50ZFP STD5NK50Z - STD5NK50Z-1 N-CHANNEL 500V-1.22Ω-4.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 500 500 500 500 < 1.5 < 1.5
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STP5NK50Z
STP5NK50ZFP
STD5NK50Z
STD5NK50Z-1
00V-1
O-220/TO-220FP/DPAK/IPAK
D5NK5
p5nk50z
p5nk50zfp
P5NK50
d5nk50z
P5NK5
p5nk
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D5NK5
Abstract: P5NK50ZFP p5nk50z P5NK50 STP5NK50ZFP D5NK50Z STP5NK50Z STB5NK50Z-1 STD5NK50Z-1 STB5BK50Z-1
Text: STB5NK50Z-1 - STP5NK50ZFP STP5NK50Z - STD5NK50Z - STD5NK50Z-1 N-CHANNEL500V-1.22Ω-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP5NK50Z STP5NK50ZFP STD5NK50Z STD5NK50Z-1 STB5BK50Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 500
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STB5NK50Z-1
STP5NK50ZFP
STP5NK50Z
STD5NK50Z
STD5NK50Z-1
N-CHANNEL500V-1
4ATO-220/FP/DPAK/IPAK/I2PAK
STP5NK50Z
STD5NK50Z
D5NK5
P5NK50ZFP
p5nk50z
P5NK50
STP5NK50ZFP
D5NK50Z
STD5NK50Z-1
STB5BK50Z-1
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D5NK5
Abstract: P5NK50ZFP p5nk50z P5NK50 STP5NK50Z STB5NK50Z STB5NK50Z-1 STB5NK50ZT4 STD5NK50Z STD5NK50Z-1
Text: STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP
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STB5NK50Z/-1
STD5NK50Z/-1
STP5NK50Z
STP5NK50ZFP
O-220/FP-D/IPAK-D2/I2PAK
STB5NK50Z
STB5NK50Z-1
STD5NK50Z
STD5NK50Z-1
STP5K50Z
D5NK5
P5NK50ZFP
p5nk50z
P5NK50
STB5NK50Z
STB5NK50Z-1
STB5NK50ZT4
STD5NK50Z
STD5NK50Z-1
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P5NK50ZFP
Abstract: D5NK5 p5nk50z B5NK50Z P5NK50 STP5NK50Z STP5NK50ZFP D5NK50Z L4917 STB5NK50ZT4
Text: STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP
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STB5NK50Z/-1
STD5NK50Z/-1
STP5NK50Z
STP5NK50ZFP
O-220/FP-D/IPAK-D2/I2PAK
STB5NK50Z
STB5NK50Z-1
STD5NK50Z
STD5NK50Z-1
STP5K50Z
P5NK50ZFP
D5NK5
p5nk50z
B5NK50Z
P5NK50
STP5NK50ZFP
D5NK50Z
L4917
STB5NK50ZT4
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P5NK50Z
Abstract: p5nk50zfp D5NK5 P5NK50 STP5NK50ZFP
Text: STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22Ω - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE STB5NK50Z STB5NK50Z-1 STD5NK50Z STD5NK50Z-1 STP5K50Z STP5K50ZFP • ■ ■ ■
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STB5NK50Z/-1
STD5NK50Z/-1
STP5NK50Z
STP5NK50ZFP
O-220/FP-D/IPAK-D2/I2PAK
STB5NK50Z
STB5NK50Z-1
STD5NK50Z
STD5NK50Z-1
STP5K50Z
P5NK50Z
p5nk50zfp
D5NK5
P5NK50
STP5NK50ZFP
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F18N10CS
Abstract: RFB18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10
Text: RFB18N10CS 18A, 100V, 0.100 Ohm, Current Sensing, N-Channel Power MOSFET August 1997 Features Description • 18A, 100V The RFB18N10CS is an N-Channel enhancement-mode silicon-gate power field-effect transistor which has a built-in current sensing function. The current sense lead provides an
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RFB18N10CS
RFB18N10CS
-55oC
175oC
F18N10CS
F18N10
CA3094
ds 1425
AN7254
AN7260
isd 1425
RFB18N10
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HV41050
Abstract: K820 JESD97 STK820
Text: STK820 N-channel 25 V - 0.0058 Ω - 21 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25 V <0.0073 Ω 63 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■
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STK820
2002/95/EC
HV41050
K820
JESD97
STK820
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k820
Abstract: JESD97 STK820
Text: STK820 N-channel 25 V - 0.0058 Ω - 21 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25 V <0.0073 Ω 63 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■
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STK820
2002/95/EC
k820
JESD97
STK820
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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K820
Abstract: JESD97 STK820
Text: STK820 N-channel 25 V - 0.0058 Ω - 21 A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK820 25 V <0.0073 Ω 63 nC*mΩ 5.2 W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■
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STK820
2002/95/EC
K820
JESD97
STK820
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76129d
Abstract: MOSFET 76129D AN9321 AN9322 HUF76129D3 HUF76129D3S HUF76129D3ST TB334 KP-57 m65e
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
1999ducts
76129d
MOSFET 76129D
AN9321
AN9322
HUF76129D3
HUF76129D3S
HUF76129D3ST
TB334
KP-57
m65e
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Untitled
Abstract: No abstract text available
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
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76129d
Abstract: No abstract text available
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
76129d
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76129d
Abstract: AN9321 AN9322 HUF76129D3 HUF76129D3S HUF76129D3ST TB334 mosfet vgs 5v 5a 76129
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
76129d
AN9321
AN9322
HUF76129D3
HUF76129D3S
HUF76129D3ST
TB334
mosfet vgs 5v 5a
76129
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NT101
Abstract: merlin gerin catalogue 1980 Schneider catalogue 2000 telemecanique altivar 31 fault codes telemecanique TSX 27 20
Text: LV power air circuit breakers and switch-disconnectors Catalogue Masterpact NT and NW Merlin Gerin We do more with electricity 000000000 yyyy Schneider Electric - All right reserved Schneider Electric Industries SA 5, rue Nadar 92506 Rueil-Malmaison Cedex France
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BTP207E
E58856
BTP207E-50200-NW
fm/39
NT101
merlin gerin catalogue 1980
Schneider catalogue 2000
telemecanique altivar 31 fault codes
telemecanique TSX 27 20
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76129d
Abstract: HUF76129D3 AN9321 AN9322 HUF76129D3S HUF76129D3ST TB334 ta7612
Text: HUF76129D3, HUF76129D3S Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF76129D3,
HUF76129D3S
76129d
HUF76129D3
AN9321
AN9322
HUF76129D3S
HUF76129D3ST
TB334
ta7612
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mx 362-0
Abstract: LV432403X63A400 29450 SCHNEIDER LV432757 Schneider NSX 400 F schneider NS1250 MICROLOGIC 2.0 LV431411X62A250 EZC100N3040 LV4A3F100100B4 LV429270
Text: Price List Low Voltage Distribution Products With effect from February 01, 2013 Price List Contents Prisma iPM: A range of Kit based LV panels . . . . . . . . . . . . . 1 EasyPact EZC: b MCCBs for Distribution Network . . . . . . . . . . . . . . . . . . . . . . 3
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AAT4615
Abstract: AAT4615ITP-T1
Text: AAT4615 2.25A Current Limited Load Switch General Description Features The AAT4615 SmartSwitch is a member of AnalogicTech™'s Application Specific Power MOSFET™ ASPM™ product family. It is a Current Limited P-channel MOSFET power switch designed
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AAT4615
AAT4615
AAT4615ITP-T1
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OP62
Abstract: OP 71 SN 102 lcd OP67 OP35 OP28 OP69 transistor 1240 EM83040A EM83040ABQ
Text: EM83040A LCD CONTROLLER inary m i l e r P GENERAL DESCRIPTION The EM83040A is a dot matrix LCD driver which is fabricated by low power CMOS technology. This chip includes 80- bits shift register , 80 bits data latch and 80 bits level driver. A LCD RAM inside can be mapping
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EM83040A
EM83040A
OP62
OP 71
SN 102 lcd
OP67
OP35
OP28
OP69
transistor 1240
EM83040ABQ
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76129d
Abstract: No abstract text available
Text: HUF76129D3, HUF76129D3S S em iconductor January 1999 Data Sheet 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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OCR Scan
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HUF76129D3,
HUF76129D3S
30e-2
00e-4
90e-2
80e-1
00e-1
HUF76129D
76129d
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