SF3031L
Abstract: IPS021L 6210s IPS0151 IPS0151S IPS021 IPS021S IPS031 IPS031G IPS031S
Text: International Rectifier Automotive Intelligent Power Switch Navigator Topology Low S i de Rds on @25ºC (mΩ) Over-current protecti on 5 100A lsd (latched) latched 25 35A Isd (latched) latched 60 12A Isd (latched) latched 70 12A Isd (latched) latched 150
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OT223
IPS0151
IPS0151S
IPS031
IPS031S
IPS021
IPS021S
IPS031G
IPS021L
SF3021L
SF3031L
6210s
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IPS521
Abstract: IPS5451 IPS022G IPS511 IPS511G IPS511S IPS512G IPS514G IPS521G IPS521S
Text: International Rectifier Industrial IC Navigator IPS Topology Low S i de Low S i de 2 channels Rds(on) @25ºC (mΩ) Over-current protection 5 100A lsd (latched) latched 25 35A Isd (latched) latched Over-temperature protection (165ºC) 60 12A Isd (latched)
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OT223
SMD220
IPS0151
IPS0151S
IPS031
IPS031S
IPS021
Super220
IPS021S
IPS0551T
IPS521
IPS5451
IPS022G
IPS511
IPS511G
IPS511S
IPS512G
IPS514G
IPS521G
IPS521S
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Untitled
Abstract: No abstract text available
Text: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET PRELIMINARY DATA TYPE STY100NS20FD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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Max247
STY100NS20FD
Max247
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STY100NS20FD
Abstract: No abstract text available
Text: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET TYPE STY100NS20FD n n n n n n n VDSS RDS on ID 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING
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STY100NS20FD
Max247
STY100NS20FD
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STY100NS20FD
Abstract: No abstract text available
Text: STY100NS20FD N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY Power MOSFET n n n n n n n TYPE VDSS RDS on ID STY100NS20FD 200V < 0.024Ω 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING
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STY100NS20FD
Max247
STY100NS20FD
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Untitled
Abstract: No abstract text available
Text: STL100NH3LL N-CHANNEL 30V - 0.0028Ω - 100A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (2) TYPICAL RDS(on) = 0.0028 Ω @ 10V
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STL100NH3LL
STL100NH3LL
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3240A
Abstract: STP100NF04L
Text: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of
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STP100NF04L
O-220
3240A
STP100NF04L
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Untitled
Abstract: No abstract text available
Text: STP100NF04L N-CHANNEL 40V - 0.0036Ω - 100A TO-220 STripFET POWER MOSFET TYPE STP100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power Mosfet is the latest development of
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O-220
STP100NF04L
O-220
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STP100NF04L
Abstract: No abstract text available
Text: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION
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STP100NF04L
O-220
STP100NF04L
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Untitled
Abstract: No abstract text available
Text: STL100NH3LL N-CHANNEL 30V - 0.0028Ω - 100A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (2) TYPICAL RDS(on) = 0.0028 Ω @ 10V
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STL100NH3LL
STL100NH3LL
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Untitled
Abstract: No abstract text available
Text: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009" G ID = 100A
S Description
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IRF1104PbF
O-220
O-220AB
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3240A
Abstract: STB100NF04L
Text: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of
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STB100NF04L
3240A
STB100NF04L
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STB100NF04L
Abstract: No abstract text available
Text: STB100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET II POWER MOSFET TYPE STB100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION This Power MOSFET is the latest development of
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STB100NF04L
STB100NF04L
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Untitled
Abstract: No abstract text available
Text: STB100NF04L N-CHANNEL 40V - 0.0036Ω - 100A D2PAK STripFET POWER MOSFET TYPE STB100NF04L • ■ ■ ■ V DSS RDS on ID 40 V <0.0042 Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power Mosfet is the latest development of
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STB100NF04L
O-263
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Untitled
Abstract: No abstract text available
Text: PD - 94967 IRF1104PbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104PbF
O-220
O-220AB.
O-220AB
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IRF1104
Abstract: No abstract text available
Text: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104
O-220
IRF1104
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40V 60A MOSFET
Abstract: IRF1104
Text: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A
S Description
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IRF1104
O-220
40V 60A MOSFET
IRF1104
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B100NF04L
Abstract: B100NF STB100NF04LT4 B100NF* Datasheet STB100NF04L STB100NF04L-1
Text: STB100NF04L STB100NF04L-1 N-CHANNEL 40V - 0.0036 Ω - 100A D²PAK/I²PAK STripFET II POWER MOSFET TYPE VDSS RDS on ID STB100NF04L STB100NF04L-1 40 V 40 V <0.0042Ω <0.0042Ω 100 A 100 A • ■ ■ ■ TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE
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STB100NF04L
STB100NF04L-1
O-263
O-262
B100NF04L
B100NF
STB100NF04LT4
B100NF* Datasheet
STB100NF04L
STB100NF04L-1
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STP100NF04L
Abstract: ISD 100a
Text: STP100NF04L N-CHANNEL 40V - 0.0036 Ω - 100A TO-220 STripFET II POWER MOSFET TYPE STP100NF04L • ■ ■ ■ VDSS RDS on ID 40 V <0.0042Ω 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 DESCRIPTION
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STP100NF04L
O-220
STP100NF04L
ISD 100a
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B100NF04
Abstract: B100NF B100NF04L STB100NF04L STB100NF04L-1 STB100NF04LT4
Text: STB100NF04L STB100NF04L-1 N-CHANNEL 40V - 0.0036 Ω - 100A D²PAK/I²PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB100NF04L STB100NF04L-1 40 V 40 V <0.0042Ω <0.0042Ω 100 A 100 A TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE
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STB100NF04L
STB100NF04L-1
O-263
O-262
B100NF04
B100NF
B100NF04L
STB100NF04L
STB100NF04L-1
STB100NF04LT4
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STSJ100NH3LL
Abstract: No abstract text available
Text: STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
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STSJ100NH3LL
STSJ100NH3LL
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Untitled
Abstract: No abstract text available
Text: STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8 STripFET III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL • ■ ■ ■ ■ VDSS R DS on ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
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STSJ100NH3LL
STSJ100NH3LL
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Y100NS20FD
Abstract: ISD100A STY100NS20FD mosfet 100A ST ISD 100a JESD97
Text: STY100NS20FD N-channel 200V - 0.022Ω - 100A - Max247 MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STY100NS20FD 200V <0.024Ω 100A • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ ± 20V gate to source voltage rating
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STY100NS20FD
Max247
Y100NS20FD
ISD100A
STY100NS20FD
mosfet 100A ST
ISD 100a
JESD97
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HRF3205 equivalent
Abstract: HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205S HRF3205ST TB334 mosfet HRF3205
Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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HRF3205,
HRF3205S
HRF3205S
HRF3205
53e-5
38e-3
00e-3
HRF3205 equivalent
HRF3205 equivalent mosfet number
hrf3205
data sheet mosfet HRF3205
hrf3205 data
hrf3205 datasheet
HRF3205ST
TB334
mosfet HRF3205
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