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    ISB1035AS1

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 ISB1035AS1 PRELIMINARY FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISB1035AS1 is a resin sealed silicon PNP epitaxial type


    Original     		ISB1035AS1 ISB1035AS1 ISD1447AS1. 100MHz 600mW PDF

    marking CODE n3 6PIN

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7
    Text: ２０１０年３月版 Sales Guide セールスガイド 小信号トランジスタダイオード/リニアIC Small Signal TransistorＤiodes / Linear IC 目次 INDEX 形名について The Type Name of the Transistor ･･･････････････････････････････ 2


    Original     		2SA1235 marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 marking code NJ SMD Transistor MC931 diode smd transistor marking A7 p7 transistor smd marking ka p7 PDF

    ISB1035AS1

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 ISD1447AS1 PRELIMINARY FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Notice: This is not a final specification Some parametric are subject to change. DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISD1447AS1 is a silicon NPN epitaxial type transistor designed


    Original     		ISD1447AS1 ISD1447AS1 ISB1035AS1. 100MHz 600mW ISB1035AS1 PDF