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    Integrated Silicon Solution Inc

    Integrated Silicon Solution Inc IS61WV1288EEBLL-10TLI

    IC SRAM 1MBIT PARALLEL 32TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS61WV1288EEBLL-10TLI Tray 1,798 1
    • 1 $1.9
    • 10 $1.781
    • 100 $1.7035
    • 1000 $1.56545
    • 10000 $1.43682
    		Buy Now

    Integrated Silicon Solution Inc IS61WV102416BLL-10MLI

    IC SRAM 16MBIT PAR 48MINIBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS61WV102416BLL-10MLI Tray 1,388 1
    • 1 $22.7
    • 10 $21.022
    • 100 $20.01525
    • 1000 $18.35912
    • 10000 $18.35912
    		Buy Now
    Quest Components IS61WV102416BLL-10MLI 67
    • 1 $14.794
    • 10 $14.794
    • 100 $14.225
    • 1000 $14.225
    • 10000 $14.225
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    IS61WV102416BLL-10MLI 30
    • 1 $16.4678
    • 10 $16.4678
    • 100 $15.8344
    • 1000 $15.8344
    • 10000 $15.8344
    		Buy Now

    Integrated Silicon Solution Inc IS61WV5128EDBLL-10TLI

    IC SRAM 4MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS61WV5128EDBLL-10TLI Tray 1,183 1
    • 1 $2.68
    • 10 $2.495
    • 100 $2.384
    • 1000 $2.1875
    • 10000 $2.1875
    		Buy Now
    Mouser Electronics IS61WV5128EDBLL-10TLI 3,554
    • 1 $2.59
    • 10 $2.29
    • 100 $2.2
    • 1000 $2.18
    • 10000 $2.18
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    Chip Stock IS61WV5128EDBLL-10TLI 10,000
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    Integrated Silicon Solution Inc IS61WV51216BLL-10TLI

    IC SRAM 8MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS61WV51216BLL-10TLI Tray 822 1
    • 1 $15.3
    • 10 $14.185
    • 100 $13.5135
    • 1000 $12.288
    • 10000 $12.288
    		Buy Now
    Mouser Electronics IS61WV51216BLL-10TLI 1,557
    • 1 $15.3
    • 10 $14.19
    • 100 $12.73
    • 1000 $11.98
    • 10000 $11.98
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    Bristol Electronics IS61WV51216BLL-10TLI 90
    • 1 -
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    TME IS61WV51216BLL-10TLI 270 1
    • 1 $21.85
    • 10 $19.18
    • 100 $15.29
    • 1000 $15.29
    • 10000 $15.29
    		Buy Now

    Integrated Silicon Solution Inc IS61WV6416DBLL-10TLI

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IS61WV6416DBLL-10TLI Tray 731 1
    • 1 $2.1
    • 10 $1.961
    • 100 $1.87575
    • 1000 $1.68014
    • 10000 $1.5804
    		Buy Now
    TME IS61WV6416DBLL-10TLI 1
    • 1 $2.9
    • 10 $2.48
    • 100 $2
    • 1000 $2
    • 10000 $2
    		Get Quote
    EBV Elektronik IS61WV6416DBLL-10TLI 270 9 Weeks 135
    • 1 -
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    Find more IS61WV price and stock on Findchips.com

    IS61WV Datasheets (218)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IS61WV102416ALL Integrated Silicon Solution 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF
    IS61WV102416ALL Integrated Silicon Solution Asynchronous SRAM Original PDF
    IS61WV102416ALL-20MI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MB 20NS 48BGA Original PDF
    IS61WV102416ALL-20MI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MB 20NS 48BGA Original PDF
    IS61WV102416ALL-20MLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48MGA Original PDF
    IS61WV102416ALL-20MLI-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48MGA Original PDF
    IS61WV102416ALL-20TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MB 20NS 48TSOP Original PDF
    IS61WV102416ALL-20TLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MB 20NS 48TSOP Original PDF
    IS61WV102416BLL Integrated Silicon Solution 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF
    IS61WV102416BLL Integrated Silicon Solution Asynchronous SRAM Original PDF
    IS61WV102416BLL-10MI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 48MINIBGA Original PDF
    IS61WV102416BLL-10MI Integrated Silicon Solution 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY Original PDF
    IS61WV102416BLL-10MI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 48MINIBGA Original PDF
    IS61WV102416BLL-10MLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 48MINIBGA Original PDF
    IS61WV102416BLL-10MLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 48MINIBGA Original PDF
    IS61WV102416BLL-10TLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 48TSOP Original PDF
    IS61WV102416BLL-10TLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 10NS 48TSOP Original PDF
    IS61WV102416DALL-10BLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48MGA Original PDF
    IS61WV102416DALL-10BLI-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48MGA Original PDF
    IS61WV102416DALL-10TLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC SRAM 16M PARALLEL 48TSOP Original PDF
    ...

    IS61WV Datasheets Context Search

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    PDF

    IS61WV51232BLL-10BLI

    Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
    Text: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS IS61WV51232Axx) IS61/64WV51232Bxx) 90-ball IS61WV51232BLL-10BI IS61WV51232BLL-10BLI IS61WV51232BLL-10BLI IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3 PDF

    IS61WV3216BLL

    Abstract: IS64WV3216BLL
    Text: IS64WV3216BLL IS61WV3216BLL ISSI 32K x 16 HIGH-SPEED CMOS STATIC RAM NOVEMBER 2005 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW typical operating 25 µW (typical) standby • TTL compatible interface levels


    Original     		IS64WV3216BLL IS61WV3216BLL IS61/64WV3216BLL 288-bit IS61WV3216BLL IS64WV3216BLL PDF

    IS61WV25616BLL-10TLI

    Abstract: IS61WV25616ALL IS64WV25616 IS61WV25616BLL IS61WV25616BLL-10TI IS64WV25616BLL-10CTLA3 is61wv25616bll-10bli IS61WV25616BLL-10TL IS61WV25616
    Text: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV25616ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical)


    Original     		IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS IS61/64WV25616ALL/BLL) IS61/64WV25616ALS/BLS) IS61WV25616Axx) IS61/64WV25616Bxx) IS61WV25616BLL-10TLI IS61WV25616ALL IS64WV25616 IS61WV25616BLL IS61WV25616BLL-10TI IS64WV25616BLL-10CTLA3 is61wv25616bll-10bli IS61WV25616BLL-10TL IS61WV25616 PDF

    IS61WV51216

    Abstract: IS61WV51216BLL IS61WV51216BLL-10TLI is64wv51216bll-10ctla3 IS64WV51216BLL-10MLA3 IS61WV51216BLL-10TI IS64WV51216BLL IS61WV51216BLL-10MLI IS61WV51216ALL IS61WV5121
    Text: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL IS61WV51216ALL) IS61/64WV51216BLL) 48-ball 44-pin MO-207 IS61WV51216 IS61WV51216BLL IS61WV51216BLL-10TLI is64wv51216bll-10ctla3 IS64WV51216BLL-10MLA3 IS61WV51216BLL-10TI IS64WV51216BLL IS61WV51216BLL-10MLI IS61WV51216ALL IS61WV5121 PDF

    IS61WV10248BLL

    Abstract: IS61WV10248BLL-10TLI IS61WV10248BLL-10TI IS61WV10248BLL-10MLI IS61WV10248BLL-10T
    Text: IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM JUNE 2008 FEATURES DESCRIPTION • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


    Original     		IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL IS61WV10248ALL) IS61/64WV10248BLL) 48-ball 44-pin IS61WV10248BLL IS61WV10248BLL-10TLI IS61WV10248BLL-10TI IS61WV10248BLL-10MLI IS61WV10248BLL-10T PDF

    IS61WV10248EDBLL

    Abstract: No abstract text available
    Text: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61WV10248EDBLL IS64WV10248EDBLL 48-ball 44-pin IS61/64WV10248EDBLL IS64WV10248EDBLL-10CTA3 IS64WV10248EDBLL-10CTLA3TSOP PDF

    IS61WV5128EDBLL

    Abstract: is61wv5128
    Text: IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2011 DESCRIPTION The ISSI IS61/64WV5128EDBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)


    Original     		IS61WV5128EDBLL IS64WV5128EDBLL 304-bit IS61/64WV5128EDBLL MS-027. MO-207 is61wv5128 PDF

    is61wv5128

    Abstract: No abstract text available
    Text: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM JULY 2007 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)


    Original     		IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS IS61/64WV5128ALL/BLL) IS61/64WV5128ALS/BLS) IS61WV5128Axx) IS61/64WV5128Bxx) IS61WV5128Axx IS61/64WV5128BxBSC is61wv5128 PDF

    IS61WV6416EEBLL

    Abstract: IS64WV6416EEBLL-10BA3
    Text: IS61WV6416EEBLL IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The ISSI IS61/64WV6416EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)


    Original     		IS61WV6416EEBLL IS64WV6416EEBLL IS61/64WV6416EEBLL 576-bit IS61/64WV6416EEBLL MO-207 MS-027. com15 IS64WV6416EEBLL-10BA3 PDF

    is61wv5128

    Abstract: IS61WV5128BLL-10TLI
    Text: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM MAY 2007 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)


    Original     		IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS IS61/64WV5128ALL/BLL) IS61/64WV5128ALS/BLS) IS61WV5128Axx) IS61/64WV5128Bxx) IS61WV5128Axx IS61/64WV5128Bxx is61wv5128 IS61WV5128BLL-10TLI PDF

    IS61WV25616ALL

    Abstract: IS61WV25616 IS61WV25616BLL-10TLI IS61WV25616BL IS64WV25616
    Text: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64WV25616ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical)


    Original     		IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS IS61/64WV25616ALL/BLL) IS61/64WV25616ALS/BLS) IS61WV25616Axx) IS61/64WV25616Bxx) IS61WV25616ALL IS61WV25616 IS61WV25616BLL-10TLI IS61WV25616BL IS64WV25616 PDF

    IS61WV10248EDBLL-10TLI

    Abstract: No abstract text available
    Text: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61WV10248EDBLL IS64WV10248EDBLL 48-ball 44-pin IS61/64WV10248EDBLL usingS64WV10248EDBLL-10CTA3 IS64WV10248EDBLL-10CTLA3TSOP IS61WV10248EDBLL-10TLI PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL 1M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		IS61WV10248ALL IS61WV10248BLL IS64WV10248BLL IS61WV10248ALL) IS61/64WV10248BLL) 48-ball 44-pin Automoti11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM NOVEMBER 2012 FEATURES HIGH SPEED: IS61/64WV25616ALL/BLL •฀ High-speed฀access฀time:฀8,฀10,฀20฀ns •฀ Low฀Active฀Power:฀85฀mW฀(typical)


    Original     		IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS IS61/64WV25616ALL/BLL) IS61/64WV25616ALS/BLS) IS61WV25616Axx) IS61/64WV25616Bxx) IS61WV25616ALL/ALS, IS61WV25616BLL/BLS, PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61WV6416EEBLL IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The฀ ISSI฀ IS61/64WV6416EEBLL฀ is฀ a฀ ฀ high-speed,฀ FEATURES •฀ High-speed฀access฀time:฀8,฀10฀ns •฀ Low฀Active฀Power:฀85฀mW฀ typical


    Original     		IS61WV6416EEBLL IS64WV6416EEBLL IS61/64WV6416EEBLLà 576-bità IS61/64WV6416EEBLL MO-207 MS-027. PDF

    IS61WV25616EDBLL

    Abstract: IS61WV25616EDBLL-10TLI
    Text: IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns)


    Original     		IS61WV25616EDBLL IS64WV25616EDBLL 304-bit IS61/64WV25616EDBLL MO-207 IS61WV25616EDBLL-10TLI PDF

    IS61WV20488BLL-10MLI

    Abstract: IS61WV20488ALL IS61WV20488BLL IS61WV20488BLL-10MI IS61WV20488BLL-10TI IS64WV20488BLL b0804 IS61WV20488BLL10T
    Text: IS61WV20488ALL IS61/64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options


    Original     		IS61WV20488ALL IS61/64WV20488BLL IS61WV20488ALL) IS61/64WV20488BLL) 48-ball 44-pin MO-207 IS61WV20488ALL, IS61WV20488BLL-10MLI IS61WV20488ALL IS61WV20488BLL IS61WV20488BLL-10MI IS61WV20488BLL-10TI IS64WV20488BLL b0804 IS61WV20488BLL10T PDF

    IS61WV1288EEBLL

    Abstract: No abstract text available
    Text: IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MARCH 2014 DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)


    Original     		IS61WV1288EEBLL IS64WV1288EEBLL IS61/64WV1288EEBLL 576-bit MS-027. IS61/64WV1288EEBLL MO-207 IS61WV1288EEBLL PDF

    IS64WV51216BLL-10MLA3

    Abstract: IS61WV51216 IS61WV51216BLL IS64WV51216BLL
    Text: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL IS61WV51216ALL) IS61/64WV51216BLL) 48-ball 44-pin IS64WV51216BLL-10MLA3 IS61WV51216 IS61WV51216BLL IS64WV51216BLL PDF

    IS61WV20488ALL

    Abstract: IS61WV20488BLL IS61WV20488BLL-10MI IS61WV20488BLL-10MLI IS61WV20488BLL-10TI IS64WV20488BLL
    Text: IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL ISSI 2M x 8 HIGH-SPEED CMOS STATIC RAM AUGUST 2006 FEATURES DESCRIPTION • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


    Original     		IS61WV20488ALL IS61WV20488BLL IS64WV20488BLL IS61WV20488ALL) IS61/64WV20488BLL) 48-ball 44-pin IS61WV20488ALL IS61WV20488BLL IS61WV20488BLL-10MI IS61WV20488BLL-10MLI IS61WV20488BLL-10TI IS64WV20488BLL PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


    Original     		IS61WV51216EDALL IS61/64WV51216EDBLL IS61WV51216EDALL) IS61/64WV51216EDBLL) 48-ball 44-pin JUNEDBLL-10CTA3 IS64WV51216EDBLL-10CTLA3TSOP IS61/64WV51216EDBLL PDF

    512kx4

    Abstract: No abstract text available
    Text: IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC PRELIMINARY INFORMATION AUGUST 2011 DESCRIPTION The ISSI IS61/64WV5128EDBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical


    Original     		IS61WV5128EDBLL IS64WV5128EDBLL IS61/64WV5128EDBLL) 304-bit and6/04/2008 IS61/64WV5128EDBLL MS-027. MO-207 512kx4 PDF

    Untitled

    Abstract: No abstract text available
    Text: IS64WV6416BLL IS61WV6416BLL ISSI 64K x 16 HIGH-SPEED CMOS STATIC RAM JUNE 2005 FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • CMOS low power operation: 50 mW typical operating 25 µW (typical) standby • TTL compatible interface levels


    Original     		IS64WV6416BLL IS61WV6416BLL IS61/64WV6416BLL 576bit 12nsBSC PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL IS61WV51216ALL) IS61/64WV102416BLL) 48-ball 44-pin PDF