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    IS61LV256 Price and Stock

    Integrated Silicon Solution Inc IS61LV25616AL-10TL

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey IS61LV25616AL-10TL Tray 2,236 1
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    IS61LV25616AL-10TL Bulk 8 Weeks 270
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    Mouser Electronics IS61LV25616AL-10TL 7,155
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    Verical IS61LV25616AL-10TL 1,240 27
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    Integrated Silicon Solution Inc IS61LV25616AL-10TL-TR

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey IS61LV25616AL-10TL-TR Reel 2,000 1,000
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    IS61LV25616AL-10TL-TR Cut Tape 905 1
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    IS61LV25616AL-10TL-TR Digi-Reel 1
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    Avnet Americas IS61LV25616AL-10TL-TR Reel 8 Weeks 1,000
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    Mouser Electronics IS61LV25616AL-10TL-TR 1,777
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    Bristol Electronics IS61LV25616AL-10TL-TR 411
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    Integrated Silicon Solution Inc IS61LV25616AL-10TLI-TR

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey IS61LV25616AL-10TLI-TR Reel 2,000 1,000
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    IS61LV25616AL-10TLI-TR Cut Tape 1,506 1
    • 1 $4.76
    • 10 $4.323
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    Mouser Electronics IS61LV25616AL-10TLI-TR 1,454
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    Arrow Electronics IS61LV25616AL-10TLI-TR Cut Strips 97 8 Weeks 24
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    Integrated Silicon Solution Inc IS61LV256AL-10TLI

    IC SRAM 256KBIT PAR 28TSOP I
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    DigiKey IS61LV256AL-10TLI Tray 915 1
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    Mouser Electronics IS61LV256AL-10TLI 332
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    TME IS61LV256AL-10TLI 66 1
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    New Advantage Corporation IS61LV256AL-10TLI 174 1
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    Integrated Silicon Solution Inc IS61LV25616AL-10TLI

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey IS61LV25616AL-10TLI Tray 772 1
    • 1 $4.76
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    Mouser Electronics IS61LV25616AL-10TLI 550
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    TME IS61LV25616AL-10TLI 16 1
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    Avnet Asia IS61LV25616AL-10TLI 8 Weeks 135
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    New Advantage Corporation IS61LV25616AL-10TLI 2,777 1
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    Find more IS61LV256 price and stock on Findchips.com

    IS61LV256 Datasheets (325)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IS61LV256 Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Original PDF
    IS61LV256-10J Integrated Circuit Solution 10ns 3.3V 32K x 8 low voltage CMOS static RAM Original PDF
    IS61LV256-10J Integrated Silicon Solution 32k x 8 Low Voltage CMOS Static RAM Original PDF
    IS61LV256-10JI Integrated Circuit Solution 10ns 3.3V 32K x 8 low voltage CMOS static RAM Original PDF
    IS61LV256-10JI Integrated Silicon Solution 32k x 8 Low Voltage CMOS Static RAM Original PDF
    IS61LV256-10JIT Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Original PDF
    IS61LV256-10JT Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Original PDF
    IS61LV256-10T Integrated Circuit Solution 10ns 3.3V 32K x 8 low voltage CMOS static RAM Original PDF
    IS61LV256-10T Integrated Silicon Solution 32k x 8 Low Voltage CMOS Static RAM Original PDF
    IS61LV256-10TI Integrated Circuit Solution 10ns 3.3V 32K x 8 low voltage CMOS static RAM Original PDF
    IS61LV256-10TI Integrated Silicon Solution 32k x 8 Low Voltage CMOS Static RAM Original PDF
    IS61LV256-10TIT Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Original PDF
    IS61LV256-10TT Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Original PDF
    IS61LV256-12J Integrated Circuit Solution 12ns 3.3V 32K x 8 low voltage CMOS static RAM Original PDF
    IS61LV256-12J Integrated Silicon Solution 32k x 8 Low Voltage CMOS Static RAM Original PDF
    IS61LV256-12J Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Scan PDF
    IS61LV256-12J Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Scan PDF
    IS61LV256-12JI Integrated Circuit Solution 12ns 3.3V 32K x 8 low voltage CMOS static RAM Original PDF
    IS61LV256-12JI Integrated Silicon Solution 32k x 8 Low Voltage CMOS Static RAM Original PDF
    IS61LV256-12JI Integrated Silicon Solution 32K x 8 LOW VOLTAGE CMOS STATIC RAM Scan PDF
    ...

    IS61LV256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS61LV25616

    Abstract: No abstract text available
    Text: ISSI IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES NOVEMBER 2001 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static • High-speed access time: — 10, 12, and 15 ns • CMOS low power operation


    Original     		PDF IS61LV25616 IS61LV25616 304-bit IS61LV25616-15LQI IS61LV25616-15BI 400-mil IS61LV25616-10T IS61LV25616-10K IS61LV25616-10LQ IS61LV25616-10B

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM April 2004 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby


    Original     		PDF IS61LV256 IS61LV256 768-word PK13197T28

    IS61LV25616-12T

    Abstract: No abstract text available
    Text: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • • • • • High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh


    Original     		PDF IS61LV25616 IS61LV25616 304-bit 400mil IS61LV25616-12TI IS61LV25616-12KI IS61LV25616-12BI IS61LV25616-12T

    IS61LV25616

    Abstract: No abstract text available
    Text: ISSI IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES AUGUST 2000 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static • High-speed access time: — 7, 8, 10, 12, and 15 ns • CMOS low power operation


    Original     		PDF IS61LV25616 IS61LV25616 304-bit IS61LV25616-7T IS61LV25616-7K IS61LV25616-7LQ IS61LV25616-7B 400-mil IS61LV25616-8T IS61LV25616-8K

    IS61LV25616

    Abstract: No abstract text available
    Text: ISSI ISSI IS61LV25616 IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation — 60 mW typical operating — 6 µW (typical) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV25616 44-pin IS61LV25616 304-bit SR040-0A

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV25616L 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DECEMBER 2001 FEATURES DESCRIPTION The ISSI IS61LV25616L is a high-speed, 4,194,304-bit static • High-speed access time: — 10, 12, and 15 ns • Low Active Power — Less than 90mA typ. Active Current


    Original     		PDF IS61LV25616L IS61LV25616L 304-bit 400-mil IS61LV25616L-10T IS61LV25616L-10K IS61LV25616L-10LQ IS61LV25616L-10B IS61LV25616L-12T IS61LV25616L-12K

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ADVANCE INFORMATION NOVEMBER 1999 DESCRIPTION The ISSI IS61LV25616 is a high-speed, 4,194,304-bit static • • • • • High-speed access time: 10, 12, and 15 ns


    Original     		PDF IS61LV25616 IS61LV25616 304-bit 400-mil IS61LV25616-12TI IS61LV25616-12KI IS61LV25616-12LQI IS61LV25616-12BI IS61LV25616-15TI

    Untitled

    Abstract: No abstract text available
    Text: IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM AUGUST 2009 FEATURES •฀ High-speed฀access฀times:฀ — 10 ns •฀ Automatic฀power-down฀when฀chip฀is฀deselected •฀ CMOS฀low฀power฀operation — 60 µW฀ typical ฀CMOS฀standby


    Original     		PDF IS61LV256AL IS61LV256ALà 768-wordà 300-milà

    IS61LV25616AL

    Abstract: No abstract text available
    Text: ISSI IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEBRUARY 2003 DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power:


    Original     		PDF IS61LV25616AL IS61LV25616AL 304-bit IS61LV25616AL-10T IS61LV25616AL-10K IS61LV25616AL-10LQ IS61LV25616AL-10B 400-mil IS61LV25616AL-12T IS61LV25616AL-12K

    IS61LV25616AL

    Abstract: 61LV25616AL is61lv25616al-10tli IS61LV25616AL-10TL IS61LV25616AL-10BI IS61LV25616AL10TL IS61LV25616AL-10KLI IS61LV25616AL-10BLI is61lv25616al-10lqli
    Text: IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY DECEMBER 2011 DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power:


    Original     		PDF IS61LV25616AL MS-027. MO-207 IS61LV25616AL 61LV25616AL is61lv25616al-10tli IS61LV25616AL-10TL IS61LV25616AL-10BI IS61LV25616AL10TL IS61LV25616AL-10KLI IS61LV25616AL-10BLI is61lv25616al-10lqli

    IS61LV256

    Abstract: IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM June 2005 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV256 IS61LV256 768-word PK13197T28 IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl

    Untitled

    Abstract: No abstract text available
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION AUGUST 2002 FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 25mA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil

    Untitled

    Abstract: No abstract text available
    Text: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • • • • • High-speed access time: 10, 12, and 15 ns CMOS low power operation TTL compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh


    Original     		PDF IS61LV25616 IS61LV25616 304-bit 400-mil IS61LV25616-10LQ IS61LV25616-12T IS61LV25616-12K IS61LV25616-12LQ IS61LV25616-15T

    IS61LV2568

    Abstract: IS61LV2568-10K IS61LV2568-10KI IS61LV2568-10T IS61LV2568-10TI IS61LV2568-12K IS61LV2568-12KI IS61LV2568-12T
    Text: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 10 and 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE


    Original     		PDF IS61LV2568 36-pin 400-mil 44-pin IS61LV2568 144-word IS61LV2568-10K IS61LV2568-10T IS61LV2568-10K IS61LV2568-10KI IS61LV2568-10T IS61LV2568-10TI IS61LV2568-12K IS61LV2568-12KI IS61LV2568-12T

    IS61LV25616AL-10TL

    Abstract: is61lv25616al-10tli IS61LV25616AL IS61LV25616AL-10KLI IS61LV25616AL10TL 10lQ
    Text: ISSI IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEBRUARY 2006 DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power:


    Original     		PDF IS61LV25616AL IS61LV25616AL 304-bit IS61LV25616AL-10TL is61lv25616al-10tli IS61LV25616AL-10KLI IS61LV25616AL10TL 10lQ

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • NOVEMBER 2004 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568L 36-pin 400-mil 44-pin 144-word

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2005 FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 µW typical CMOS standby — 65 mW (typical) operating


    Original     		PDF IS61LV256AL IS61LV256AL 768-word PK13197T28

    Untitled

    Abstract: No abstract text available
    Text: IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • APRIL 2008 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568L 36-pin 400-mil 44-pin 144-word innovati11

    IS61LV2568L

    Abstract: IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 30mA (typ.) • Standby Current: IS61LV2568L: 700µA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil IS61LV2568L IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256

    Untitled

    Abstract: No abstract text available
    Text: IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV256 IS61LV256 768-word IS61LV256-12TI IS61LV256-12JI 300mil IS61LV256-15T IS61LV256-15J IS61LV256-15TI

    IS61LV2568L

    Abstract: IS61LV2568L-10BI IS61LV2568L-8KI IS61LV2568L-8TI IS61LV2568LL
    Text: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2002 FEATURES FEATURES Continued • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 60mA (typ.) IS61LV2568LL: 25mA (typ.)


    Original     		PDF IS61LV2568L IS61LV2568LL IS61LV2568L: IS61LV2568LL: 36-pin 400-mil IS61LV2568L IS61LV2568L-10BI IS61LV2568L-8KI IS61LV2568L-8TI IS61LV2568LL

    Untitled

    Abstract: No abstract text available
    Text: m IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM i Fe b r u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable pro­


    OCR Scan     		PDF IS61LV256 768-word 300-mil 450-mil IS61LV256-15NI IS61LV256-15TI IS61LV256-15JI

    LV25616

    Abstract: Z639 IS61LV25616 LV2561 IZ21
    Text: IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation — 60 mW typical operating — 6 |^W (typical) CMOS standby • TTL compatible interface levels


    OCR Scan     		PDF IS61LV25616 44-pin ISSIIS61LV25616 304-bit SR040-0A LV25616 Z639 IS61LV25616 LV2561 IZ21

    HA1328

    Abstract: No abstract text available
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM Fe b r u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns T he [S S I IS 61LV 256 is a ve ry high-speed, low power, 32,768-w ord by 8-bit static RAM . It is fabricated using ¡SSI's


    OCR Scan     		PDF IS61LV256 768-w device1LV256-25T IS61LV256-25J 300-mil 450-mil HA1328