Untitled
Abstract: No abstract text available
Text: IRLR024N IRLU024N l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S D-Pak IRLR024N Description I-Pak IRLU024N The D-PAK is designed for surface mounting using vapor phase, infrared, or
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IRLR024N
IRLU024N
IRLR024N)
IRLU024N)
O-251AA)
IRLR/U024N
O-252AA)
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IRLU024N
Abstract: IRLR024N 17 TO252AA AN-994 IRLR024N IRLZ24N
Text: PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S Description
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91363E
IRLR024N
IRLU024N
IRLR024N)
IRLU024N)
IRLU024N
IRLR024N 17 TO252AA
AN-994
IRLR024N
IRLZ24N
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AN-994
Abstract: IRLR024N IRLU024N IRLZ24N
Text: PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S Description
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91363E
IRLR024N
IRLU024N
IRLR024N)
IRLU024N)
AN-994
IRLR024N
IRLU024N
IRLZ24N
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IRLU024N
Abstract: AN-994 IRLR024N IRLZ24N *lu024n
Text: PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S Description
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91363E
IRLR024N
IRLU024N
IRLR024N)
IRLU024N)
IRLU024N
AN-994
IRLR024N
IRLZ24N
*lu024n
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irf 480
Abstract: 200nC IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR024N IRLU024N IRLZ24N U120
Text: PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A
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5081A
IRLR024NPbF
IRLU024NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
irf 480
200nC
IRF (10A) 55V
AN-994
IRFR120
IRFU120
IRLR024N
IRLU024N
IRLZ24N
U120
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IRLU024NPBF
Abstract: IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR024N IRLU024N IRLZ24N U120
Text: PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A
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5081A
IRLR024NPbF
IRLU024NPbF
IRLR024N)
IRLU024N)
O-252AA)
EIA-481
EIA-541.
EIA-481.
IRLU024NPBF
IRF (10A) 55V
AN-994
IRFR120
IRFU120
IRLR024N
IRLU024N
IRLZ24N
U120
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Untitled
Abstract: No abstract text available
Text: PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A
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5081A
IRLR024NPbF
IRLU024NPbF
IRLR024N)
IRLU024N)
EIA-481
EIA-541.
EIA-481.
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diode 9508-1
Abstract: No abstract text available
Text: PD- 95081 IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A
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IRLR024NPbF
IRLU024NPbF
IRLR024N)
IRLU024N)
IRLR/U024NPbF
O-252AA)
EIA-481
EIA-541.
EIA-481.
diode 9508-1
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IRLR024N 17 TO252AA
Abstract: AN-994 IRLR024N IRLU024N IRLZ24N
Text: PD- 9.1363C IRLR/U024N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S Description
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1363C
IRLR/U024N
IRLR024N)
IRLU024N)
IRLR024N 17 TO252AA
AN-994
IRLR024N
IRLU024N
IRLZ24N
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AN-994
Abstract: IRLR024N IRLU024N IRLZ24N
Text: PD - 9.1363A IRLR/U024N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G Description ID = 17A
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IRLR/U024N
IRLR024N)
IRLU024N)
AN-994
IRLR024N
IRLU024N
IRLZ24N
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AN-994
Abstract: IRLR024N IRLU024N IRLZ24N
Text: Previous Datasheet Index Next Data Sheet PD - 9.1363A IRLR/U024N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V
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IRLR/U024N
IRLR024N)
IRLU024N)
AN-994
IRLR024N
IRLU024N
IRLZ24N
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IRLR024N 17 TO252AA
Abstract: RC s 72 U024N AN-994 IRLR024N IRLU024N IRLZ24N a12q
Text: PD- 9.1363C IRLR/U024N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G ID = 17A S Description
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1363C
IRLR/U024N
IRLR024N)
IRLU024N)
IRLR024N 17 TO252AA
RC s 72
U024N
AN-994
IRLR024N
IRLU024N
IRLZ24N
a12q
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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O-251AA
O-247AC
O-220AB
PowerSO-20
BUZ90af
hv82
MGF4919G-01
MGF4919G
MGF2407A-01
BUZ80AF1
6n60
MGF1302-15
SSP 50N06
2n10l
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9137
Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Text: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRFK3DC50
IRFK3F150
O-240AA
IRFK3F250
IRFK3F350
9137
surface mount IRFZ44N
IRFK3D450
IRFK4H054
IRLI640G
IRFBg30 equivalent
hexfet power mosfets international rectifier
IRFP260
IRC540 equivalent
irf 3250
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90980
Abstract: IRFI540G h6 SMD SMD BR 42
Text: I n t e r n a t i o n a l R e c t if ie r mm HEXFET " Power MOSFETS V BR DSS Drairt-to-Source BreakdownVoltage (Vohs) Put Number RdS<wi) On-Stata Resistan« (3) (Ohms) IßContinuous Drain Current 25"C 100°C (Amps) (Amps) row ) PD«Tc=25"C Max Power Dissipation
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OCR Scan
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IRLR014
IRLR024N
IRLR110
IRLR120
O-220
IRFIZ14G
IRFIZ24G
IRFIZ34G
IRFIZ44G
90980
IRFI540G
h6 SMD
SMD BR 42
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