IRFI840G
Abstract: IRL3303 IRLI3303
Text: PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.026Ω ID = 25A Description
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IRLI3303
O-220
IRFI840G
IRL3303
IRLI3303
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IRFI840G
Abstract: IRL3303 IRLI3303
Text: Previous Datasheet Index Next Data Sheet PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V
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IRLI3303
O-220
IRFI840G
IRL3303
IRLI3303
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Untitled
Abstract: No abstract text available
Text: International S Rectifier PD — IRLI3303 p r e l im in a r y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated
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IRLI3303
1897IR
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Untitled
Abstract: No abstract text available
Text: International 1 ]Rectifier PD — IR L13303 p re lim in a ry HEXFET® Power MOSFET • • • • • • Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S Sink to Lead Creepage Dist. = 4.8mm
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L13303
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