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    IRHNA9160 Price and Stock

    Infineon Technologies AG IRHNA9160D

    Power MOSFET, P Channel, 100 V, 38 A, 68 Milliohms, SMD-2, 3 Pins, Surface Mount - Bulk (Alt: IRHNA9160D)
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    Avnet Americas IRHNA9160D Bulk 10
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    International Rectifier IRHNA9160

    POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 100V, 0.071OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRHNA9160 22
    • 1 $375
    • 10 $325
    • 100 $300
    • 1000 $300
    • 10000 $300
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    IRHNA9160 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRHNA9160 International Rectifier REPETITIVE AVALANCHE AND dv-dt RATED HEXFET TRANSISTOR Original PDF
    IRHNA9160 International Rectifier Radiation Hardened Power Mosfet Original PDF
    IRHNA9160 International Rectifier -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package Original PDF
    IRHNA9160 International Rectifier -100 Volt, 0.068 Ohm, RAD HARD HEXFET TRANSISTOR Original PDF
    IRHNA9160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRHNA9160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    93160

    Abstract: IRF P CHANNEL MOSFET 10A 100V IRF P-Channel mosfet irf P-Channel MOSFET audio IRHNA9160 IRHNA93160
    Text: PD -91433A IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -100 Volt, 0.068Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original     		PDF -91433A IRHNA9160 IRHNA93160 93160 IRF P CHANNEL MOSFET 10A 100V IRF P-Channel mosfet irf P-Channel MOSFET audio IRHNA9160 IRHNA93160

    Untitled

    Abstract: No abstract text available
    Text: PD - 91433C IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)


    Original     		PDF 91433C IRHNA9160 JANSR2N7425U MIL-PRF-19500/655 IRHNA93160 JANSF2N7425U -385A/Â -100V,

    IRHNA9160

    Abstract: IRHNA93160 JANSF2N7425U JANSR2N7425U
    Text: PD - 91433C IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)


    Original     		PDF 91433C IRHNA9160 JANSR2N7425U MIL-PRF-19500/655 IRHNA93160 JANSF2N7425U -385A/ -100V, IRHNA9160 JANSF2N7425U JANSR2N7425U

    Untitled

    Abstract: No abstract text available
    Text: PD - 91433A IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RADHARD W , RAD HARD HEXFET -100 Volt, 0.068W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original     		PDF 1433A

    IRF P CHANNEL MOSFET 10A 100V

    Abstract: IRHNA9160 IRHNA93160
    Text: Preliminary Data Sheet No. PD - 9.1704 IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.068Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    Original     		PDF IRHNA9160 IRHNA93160 IRF P CHANNEL MOSFET 10A 100V IRHNA9160 IRHNA93160

    IRHNA9160

    Abstract: IRHNA93160 JANSF2N7425U JANSR2N7425U
    Text: PD - 91433B IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) RDS(on) 0.068Ω ID -38A


    Original     		PDF 91433B IRHNA9160 JANSR2N7425U MIL-PRF-19500/655 IRHNA93160 JANSF2N7425U -385A/ -100V, IRHNA9160 IRHNA93160 JANSF2N7425U JANSR2N7425U

    IRHNA9160

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1433 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA9160 TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -100Volt, 0.087Ω Product Summary International Rectifier’s P-Channel RAD HARD technology


    Original     		PDF IRHNA9160 -100Volt, IRHNA9160

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		PDF IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    2N7426

    Abstract: 2n7425 2N7425U 2N7424U 2N7426U 2N7424 IRHNA9064 IRHNA9160
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 July 2007. MIL-PRF-19500/655D 30 April 2007 SUPERSEDING MIL-PRF-19500/655C 31 October 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		PDF MIL-PRF-19500/655D MIL-PRF-19500/655C 2N7424U, 2N7425U, 2N7426U, MIL-PRF-19500. 2N7426 2n7425 2N7425U 2N7424U 2N7426U 2N7424 IRHNA9064 IRHNA9160

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original     		PDF

    2N6764 JANTX

    Abstract: 91447 IR2113L
    Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450


    Original     		PDF IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L

    2n7425

    Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
    Text: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998


    Original     		PDF MIL-PRF-19500 M0036 MO036 2N7394 2N6782 2N7334 2N7336 2N7335 2N6788 2n7425 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original     		PDF IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX

    smd transistor NG

    Abstract: No abstract text available
    Text: P D -9 1 4 3 3 A International Rectifier I R IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt r a t e d HEXFET TRANSISTOR P-CHANNEL RADHARD -100 Volt, 0.068W, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan     		PDF few90245, smd transistor NG

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1433 International IO R Rectifier REPETITIVE AVALANCHE AND dv/dtRATED IRHNA9160 H EX FET* T R A N S IS T O R P -C H A N N E L RAD HARD -lOOUott, 0.0870, RAD HARD HEXFET International R ectifier* P-Channel RAD HARD technology


    OCR Scan     		PDF IRHNA9160

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1433 I R Rectifier dv/dt R A T E D HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IR H N A 9160 P-CHANNEL RAD HARD Product Summary -100Volt, 0.087a RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan     		PDF A9160 -100Volt,

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHE9230 IRHN7054 IRHN8054

    Untitled

    Abstract: No abstract text available
    Text: Government and Space Products International H8R Rectifier P ta Port Num ber Bvdss RDS on fi) (n T C= 2 5 ° C w T ^ IO O ^ C Total Dose Rating w RadsM Fa* rD * T r = 25 °C (W ) HEXFET Power MOSFETs on Case D e m a n d O u tlin e Num ber Key R a d ia tio n H a rd e n e d


    OCR Scan     		PDF 1RHNA7064 1RHNA7160 IRHNA7260 IRHNA8064 IRHNA8260 IRHNA9064 IRHNA9160 IRHNA9260