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    Untitled

    Abstract: No abstract text available
    Text: IRHM9150D Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D)13 @Temp (øC)100 IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55


    Original     		PDF IRHM9150D

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


    OCR Scan     		PDF IRHM915Q 1x105 1x105 1x1012 MIL-STD-750,