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    IRGS10B60K Search Results

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    IRGS10B60K Price and Stock

    Infineon Technologies AG IRGS10B60KDPBF

    IGBT 600V 22A 156W D2PAK
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    DigiKey IRGS10B60KDPBF Tube
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    Infineon Technologies AG IRGS10B60KDTRLP

    IGBT 600V 22A 156W D2PAK
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    DigiKey IRGS10B60KDTRLP Digi-Reel 1
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    IRGS10B60KDTRLP Cut Tape
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    Avnet Americas IRGS10B60KDTRLP Reel 4 Weeks 1
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    Rochester Electronics IRGS10B60KDTRLP 10 1
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    Infineon Technologies AG IRGS10B60KDTRRP

    IGBT 600V 22A 156W D2PAK
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    International Rectifier IRGS10B60KDTRLP

    IRGS10B60 - Discrete IGBT with Anti-Parallel Diode '
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    Rochester Electronics IRGS10B60KDTRLP 16 1
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    IRGS10B60K Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRGS10B60KD International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging Original PDF
    IRGS10B60KD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGS10B60KDPBF International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; Similar to IRGS10B60KD with Lead Free Packaging Original PDF
    IRGS10B60KDPBF International Rectifier Original PDF
    IRGS10B60KDTRLP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 22A 156W D2PAK Original PDF
    IRGS10B60KDTRRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 22A 156W D2PAK Original PDF

    IRGS10B60K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB

    10a 400v bipolar transistor

    Abstract: C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220CTOR O-220AB. 10a 400v bipolar transistor C-150 IRGS10B60KD IRGSL10B60KD ultrafast diode 10a 400v diode 10a 400v

    AN-994

    Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994.

    irf 1830

    Abstract: 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 10A IGBT driver IC IRGB10B60KD C-150 IRGS10B60KD IRGSL10B60KD IRL3103L TRANSISTOR marking ar code irf 44 ns

    AN-994

    Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD O-220AB O-220. AN-994. O-220 AN-994 C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    IRGB10B60KD

    Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB IRGB10B60KD C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L

    irf 1830

    Abstract: diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994. irf 1830 diode 10a 400v C-150 IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L irf 607

    AN-994

    Abstract: C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L
    Text: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.


    Original     		PDF 4925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB IRGB10B60KD IRGS10B60KD O-262 IRGSL10B60KD AN-994. AN-994 C-150 IRF530S IRGB10B60KD IRGS10B60KD IRGSL10B60KD IRL3103L

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382D IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 AN-994.

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD O-220AB O-262 O-220AB

    d 1830

    Abstract: No abstract text available
    Text: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF O-220AB O-262 I20AB d 1830

    Untitled

    Abstract: No abstract text available
    Text: PD - 94382 IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGS10B60KD IRGSL10B60KD IRGS10B60KD O-262 IRGSL10B60KD

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRGC10B60KB

    Abstract: IRGS10B60KD
    Text: PD - 94409 IRGC10B60KB Die in Wafer Form Features • • • • • G Benefits • • • • 600V IC nom = 10A VCE(on) typ.=1.8V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		PDF IRGC10B60KB 150mm IRGS10B60KD IRGC10B60KB IRGS10B60KD

    Untitled

    Abstract: No abstract text available
    Text: PD - 94412A HF05D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI


    Original     		PDF 4412A HF05D060ACE 150mm IRGS10B60KD IRGS10B60K

    HF05D060ACE

    Abstract: IRGS10B60KD
    Text: PD - 94412A HF05D060ACE Hexfred Die in Wafer Form Features • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI


    Original     		PDF 4412A HF05D060ACE 150mm IRGS10B60KD 12-Mar-07 HF05D060ACE IRGS10B60KD