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    IRGMC50F

    Abstract: IRGMC50FD IRGMC50FU 39AF
    Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF

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    Abstract: No abstract text available
    Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500