irfz34n equivalent
Abstract: IRFZ34N IRFZ34N MOSFET
Text: PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description
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IRFIZ34EPbF
O-220
IRFZ34N
irfz34n equivalent
IRFZ34N MOSFET
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HRF3205 equivalent
Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Text: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3
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LC00004
HUF75545P3
O-220AB
SUP75N08-10
HUF75545S3S
O-263AB
HUF75645P3
HUF75645S3S
HRF3205 equivalent
IRFP064N equivalent
IRF3205 equivalent
IRFz44n equivalent
irf3205 ups
irf3710 equivalent
HUF75337P3 equivalent
IRFZ48N equivalent
irfp064n
HUF75343P3 equivalent
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IRFZ44N complementary
Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
Text: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,
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LC-00005
LC-00011
HUF75823D3
HUF75823D3S
HUF75829D3
HUF75829D3S
HUF75831SK8
HUF75842P3
HUF75842S3S
HUF75852G3
IRFZ44N complementary
IRFz44n equivalent
HRF3205 equivalent
IRF3710 equivalent
IRF3205 equivalent
IRFP064N equivalent
IRFP064N
IRF3205 COMPLEMENTARY
IRF3205
IRF3415 equivalent
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irfz34n equivalent
Abstract: IRFZ34N
Text: PD - 94840 IRFIZ34NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description
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IRFIZ34NPbF
O-220
irfz34n equivalent
IRFZ34N
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Untitled
Abstract: No abstract text available
Text: PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description
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IRFIZ34NPbF
O-220
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IRFZ34N
Abstract: irfz34n equivalent 840g
Text: PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description
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IRFIZ34EPbF
O-220
IRFZ34N
irfz34n equivalent
840g
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IRFZ34N
Abstract: No abstract text available
Text: PD - 94840 IRFIZ34NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description
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IRFIZ34NPbF
O-220
IRFZ34N
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IRFZ34N
Abstract: 200uc
Text: PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description
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IRFIZ34EPbF
O-220
IRFZ34N
200uc
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IRFIZ34N
Abstract: IRFI840G IRFZ34N for irfz34n
Text: PD - 9.1489B IRFIZ34N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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1489B
IRFIZ34N
O-220
IRFIZ34N
IRFI840G
IRFZ34N
for irfz34n
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IRFI840G
Abstract: IRFIZ34N IRFZ34N 65-A
Text: PD - 9.1489B IRFIZ34N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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1489B
IRFIZ34N
O-220
IRFI840G
IRFIZ34N
IRFZ34N
65-A
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IRF3205 equivalent
Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test
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O-220/D2PAK
IRF9630
IRF9510L
IRF9520
IRF9510
IRF9Z14
IRF9Z34
IRCZ34
IRCZ44
IRC540
IRF3205 equivalent
IRF 9732
IRFz44n equivalent
IRF3710 equivalent
IRF4905 equivalent
IRC540 equivalent
irf 9450
IRF 9734
IRF5305 equivalent
irf 9740
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Untitled
Abstract: No abstract text available
Text: PD - 9.1489B IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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1489B
IRFIZ34N
O-220
ha245,
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IRFIZ34E
Abstract: IRFZ34N irfz
Text: PD - 9.1674A IRFIZ34E HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ34E
O-220
IRFIZ34E
IRFZ34N
irfz
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IRFIZ34N
Abstract: IRFZ34N MOSFET 150 N IRF
Text: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ34N
O-220
IRFIZ34N
IRFZ34N
MOSFET 150 N IRF
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mosfet IRFZ34N
Abstract: IRFIZ34E IRFZ34N irfz3
Text: PD - 9.1674A IRFIZ34E HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ34E
O-220
mosfet IRFZ34N
IRFIZ34E
IRFZ34N
irfz3
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SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205
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2SK1119
2SK1120
2SK1151
2SK1152
2SK1153
2SK1154
2SK1155
2SK1156
2SK1157
2SK1158
SSH6N80
IRF640 equivalent
buz100 equivalent
ste38NA50
irf540 equivalent
stp2na60
buz10 equivalent
BUK444 equivalent
2SK2700 equivalent
BUZ71 equivalent
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IRFIBC44LC
Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219
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IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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IRFZ44G
Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics
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IRFIZ34N
IRFIZ44N
IRFIZ48N
IRFI1010N
IRFI520N
IRFI530N
IRFI1310N
IRLI3705N
IRLIZ24N
IRLIZ44N
IRFZ44G
IRF840G
IRFZ34G
IRFBC30G
IRF9540G
IRF640G
IRFBC40G
IRFP140 equivalent
transistor 9721
transistor IRFP140N
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irfz34n equivalent
Abstract: diode c331
Text: PD - 9.1674A International IQ R Rectifier IRFIZ34E HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated VDSS = 60V R d s o d
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IRFIZ34E
T0-220
irfz34n equivalent
diode c331
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irfz34n equivalent
Abstract: diode c335 diode C339 C337 W DIODE c336 C337 W 61 equivalent IRFZ34n IRFIZ34N
Text: PD - 9.1489A International IQR Rectifier IRFIZ34N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 55V RDS on = 0.04Q
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IRFIZ34N
C-338
C-339
irfz34n equivalent
diode c335
diode C339
C337 W
DIODE c336
C337 W 61
equivalent IRFZ34n
IRFIZ34N
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Untitled
Abstract: No abstract text available
Text: PD - 9 .16 74 A International IÖ R Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package V dss = High Voltage Isolation = 2.5K V R M S CD Sink to Lead C reepage Dist. = 4.8m m ^D S on = Fully Avalanche Rated 60 V 0.042Î2
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IRFIZ34E
O-220
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DIODE D3S 5D
Abstract: No abstract text available
Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
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DIODE D3S 5D
Abstract: diode D3s IRFZ3
Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
diode D3s
IRFZ3
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