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    IRFZ24N EQUIVALENT Search Results

    IRFZ24N EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    IRFZ24N EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    IRFP150N equivalent

    Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
    Text: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N


    Original     		IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRFP150N equivalent IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540 PDF

    IRF3205 equivalent

    Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
    Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test


    Original     		O-220/D2PAK IRF9630 IRF9510L IRF9520 IRF9510 IRF9Z14 IRF9Z34 IRCZ34 IRCZ44 IRC540 IRF3205 equivalent IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740 PDF

    IRFz24n equivalent

    Abstract: IRFI840G IRFZ24N
    Text: PD - 94808 IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24NPbF O-220 IRFZ24N IRFI84 IRFI840G IRFz24n equivalent IRFI840G PDF

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB PDF

    IRFZ44N complementary

    Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
    Text: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,


    Original     		LC-00005 LC-00011 HUF75823D3 HUF75823D3S HUF75829D3 HUF75829D3S HUF75831SK8 HUF75842P3 HUF75842S3S HUF75852G3 IRFZ44N complementary IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent PDF

    HRF3205 equivalent

    Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
    Text: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3


    Original     		LC00004 HUF75545P3 O-220AB SUP75N08-10 HUF75545S3S O-263AB HUF75645P3 HUF75645S3S HRF3205 equivalent IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent PDF

    IRFZ24N

    Abstract: No abstract text available
    Text: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24EPbF O-220 I840G IRFZ24N PDF

    IRFZ24N equivalent

    Abstract: IRFI840G IRFZ24N
    Text: PD - 94808 IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24NPbF O-220 IRFI84 IRFI840G IRFZ24N equivalent IRFI840G IRFZ24N PDF

    IRFI840G

    Abstract: IRFZ24N IRFz24n equivalent
    Text: PD - 94808 IRFIZ24NPbF Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24NPbF O-220 IRFI84 IRFI840G IRFI840G IRFZ24N IRFz24n equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94808 IRFIZ24NPbF HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free Description D VDSS = 55V RDS on = 0.07Ω G ID = 14A S Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24NPbF O-220 IRFI84 IRFI840G PDF

    IRFZ24N

    Abstract: IRFz24n equivalent
    Text: PD - 95594 IRFIZ24EPbF Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24EPbF O-220 I840G IRFZ24N IRFz24n equivalent PDF

    W922

    Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
    Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24E O-220 W922 IRFIZ24E IRFZ24N EV700 irf*24n PDF

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet PDF

    1501a

    Abstract: IRFZ24N IRFIZ24N irf 480
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 55V l RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		IRFIZ24N O-220 insulatin245, PDF

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent PDF

    IRFIBC44LC

    Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
    Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219


    Original     		PDF

    current regulator IRFZ24N

    Abstract: transistor irf7413 driver for 603-D
    Text: TPS56300 DUALĆOUTPUT LOWĆINPUTĆVOLTAGE DSP POWER SUPPLY CONTROLLER WITH SEQUENCING SLVS261B – DECEMBER 1999 – SEPTEMBER 2000 D 2.8 V – 5.5 V Input Voltage Range D Programmable Dual Output Controller D D D D D D D D PWP PACKAGE TOP VIEW Supports Popular DSP and Microcontroller


    Original     		TPS56300 SLVS261B current regulator IRFZ24N transistor irf7413 driver for 603-D PDF

    driver for 603-D

    Abstract: No abstract text available
    Text: TPS56300 DUALĆOUTPUT LOWĆINPUTĆVOLTAGE DSP POWER SUPPLY CONTROLLER WITH SEQUENCING SLVS261B − DECEMBER 1999 − SEPTEMBER 2000 D 2.8 V – 5.5 V Input Voltage Range D Programmable Dual Output Controller D D D D D D D D PWP PACKAGE TOP VIEW Supports Popular DSP and Microcontroller


    Original     		TPS56300 SLVS261B driver for 603-D PDF

    TPS56300

    Abstract: TPS56300PWP TPS56300PWPR C6000 IRFZ24N SLMA002 GRM39X7R104K016 ED1515 2n7002dict
    Text: TPS56300 DUAL-OUTPUT LOW-INPUT-VOLTAGE DSP POWER SUPPLY CONTROLLER WITH SEQUENCING SLVS261B – DECEMBER 1999 – SEPTEMBER 2000 D D D D D D D D D D 2.8 V – 5.5 V Input Voltage Range Programmable Dual Output Controller Supports Popular DSP and Microcontroller


    Original     		TPS56300 SLVS261B TPS56300 TPS56300PWP TPS56300PWPR C6000 IRFZ24N SLMA002 GRM39X7R104K016 ED1515 2n7002dict PDF

    IRFZ24N equivalent

    Abstract: IRFIZ24E diode c324
    Text: P D - 9.1673 International IQR Rectifier IRFIZ24E HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 60V Rds oh = 0.071 il


    OCR Scan     		IRFIZ24E O-220 C-323 C-324 IRFZ24N equivalent IRFIZ24E diode c324 PDF

    IRFZ24N equivalent

    Abstract: diode c329 c328 diode c328 equivalent 12014A
    Text: PD - 9.1501A International IQ R Rectifier IRFIZ24N HEXFET8 Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55V ^DS on = 0 . 0 7 Q


    OCR Scan     		IRFIZ24N O-220 C-328 C-329 IRFZ24N equivalent diode c329 c328 diode c328 equivalent 12014A PDF

    IRFIZ24E

    Abstract: No abstract text available
    Text: PD -9.1673A International XöR Rectifier IRFIZ24E HEXFET Power M O SFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V d s s = 60 V ^DS on = 0.071 Q


    OCR Scan     		IRFIZ24E IRFIZ24E PDF