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    Vishay Siliconix IRFS9N60ATRRPBF

    MOSFET N-CH 600V 9.2A D2PAK
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    DigiKey IRFS9N60ATRRPBF Digi-Reel 875 1
    • 1 $4.57
    • 10 $3.023
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    IRFS9N60ATRRPBF Cut Tape 875 1
    • 1 $4.57
    • 10 $3.023
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    IRFS9N60ATRRPBF Reel 800 800
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    • 1000 $1.62375
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    Vishay Intertechnologies IRFS9N60APBF

    MOSFETs TO263 600V 9.2A N-CH MOSFET
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    Mouser Electronics IRFS9N60APBF 1,621
    • 1 $3.43
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    Vishay Intertechnologies IRFS9N60ATRLPBF

    MOSFETs TO263 600V 9.2A N-CH MOSFET
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    Mouser Electronics IRFS9N60ATRLPBF 682
    • 1 $3.44
    • 10 $2.47
    • 100 $1.91
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    Vishay Intertechnologies IRFS9N60ATRRPBF

    MOSFETs TO263 600V 9.2A N-CH MOSFET
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    Mouser Electronics IRFS9N60ATRRPBF 476
    • 1 $3.91
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    Future Electronics IRFS9N60ATRRPBF 800
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    Bristol Electronics IRFS9N60ATRRPBF 111
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    Quest Components IRFS9N60ATRRPBF 88
    • 1 $5.64
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    EBV Elektronik IRFS9N60ATRRPBF 13 Weeks 800
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    Vishay Huntington IRFS9N60ATRRPBF

    MOSFET N-CH 600V 9.2A D2PAK
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    Win Source Electronics IRFS9N60ATRRPBF 22,003
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    • 100 $1.044
    • 1000 $0.848
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    IRFS9N60ATRRPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS9N60ATRRPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.2A D2PAK Original PDF

    IRFS9N60ATRRPBF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFS9N60APBF

    Abstract: IRFS9N60A SiHFS9N60A SiHFS9N60A-E3
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original
    IRFS9N60A, SiHFS9N60A O-263) 18-Jul-08 IRFS9N60APBF IRFS9N60A SiHFS9N60A-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11 PDF

    IRFS9N60A

    Abstract: SiHFS9N60A SiHFS9N60A-E3 IRFS9N60APBF
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11 IRFS9N60A SiHFS9N60A-E3 IRFS9N60APBF PDF

    IRFS9N60A

    Abstract: IRFS9N60APBF SiHFS9N60A SiHFS9N60A-E3 s09 355
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original
    IRFS9N60A, SiHFS9N60A O-263) 18-Jul-08 IRFS9N60A IRFS9N60APBF SiHFS9N60A-E3 s09 355 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness


    Original
    IRFS9N60A, SiHFS9N60A 2002/95/EC O-263) 11-Mar-11 PDF