IRFS440A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFS440A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.85Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 6.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRFS440A
IRFS440A
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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fqaf40n25
Abstract: fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06
Text: Discrete MOSFETs TO-3PF RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3PF N-Channel FQAF85N06 60 Single 0.01 - - - 86 67 100 FQAF65N06 60 Single 0.016 - - - 48 49 86
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FQAF85N06
FQAF65N06
FQAF90N08
FQAF70N08
FQAF58N08
FQAF44N08
SSF70N10A
FQAF70N10
FQAF12P20
SFF9240
fqaf40n25
fqaf19n20l
FQAF44N08
FQAF44N10
FQAF55N10
FQAF58N08
FQAF65N06
FQAF70N08
FQAF70N10
FQAF85N06
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high
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IRF830A
IRF830B
Power247TM,
sss4n60a
IRFS634A
IRFS630A
SSP4N60A
irf640b
SSS7N60A
IRFU210A
SSP7N60A
IRF634B
IRF840A china
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SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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F-91742
ss8050 d 331
tip122 tip127 mosfet audio amp
KSD180
KA1M0880 application note
SS8550 D 331
dual cc BAW62
KA2S0680
ss8550 sot-23
MPSA92(KSP92) equivalent
DIODE 1N4148 LL-34
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IXFH15N100
Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP
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IRFP354
O-247
IRFP360LC
2N3049DIE
2C3049
O-204AA/TO-3
IXTM20N55A
IXFH15N100
2N3051
IXFX15N100
IXFH40N30
IXFM6N90
IRFP450R
IXTH24N50L
IXTH26N50
IXFH20N50
IXFH9N80
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Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES - 500 V ^D S on = 0.85Q B^DSS ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology CM CD Q ♦ Improved Gate Charge II ♦ Lower Input Capacitance A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ VDS = 500V
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IRFS440A
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Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V
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IRFS440A
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IRF MOSFET driver
Abstract: IRF 250V 100A IRFS440A IRF n 30v IRF 100A 500V
Text: IRFS440A A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q CM CD ^ D S o n = II ♦ Rugged Gate Oxide Technology 0 .8 5 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V
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IRFS440A
IRF MOSFET driver
IRF 250V 100A
IRFS440A
IRF n 30v
IRF 100A 500V
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Untitled
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSEET FEATURES B V DSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 6.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V
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IRFS440A
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l62a
Abstract: No abstract text available
Text: IRFS440A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max @ VDS= 500V
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IRFS440A
IRFS44
l62a
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Untitled
Abstract: No abstract text available
Text: Advanced IRFS440A P o w e r MOSFEJT FEATURES B V Ds s • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |iA M a x . @ V DS = 500V
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OCR Scan
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IRFS440A
IRFW/I840A
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irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
irf1740
IRL244
IRF1740A
ks 0550
IRL244A
IRFZ34A
SSH6N80A
IRF634A
irfs750
IRFS640
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irfs250a
Abstract: No abstract text available
Text: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A
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OCR Scan
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IRFP140A
IRFP150A
SSH70N10A
IRFP240A
IRFP250A
SSH45N20A
IRFP244A
IRFP254A
IRFP340A
IRFP350A
irfs250a
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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SSR3055A
IRFR014A
IRFR024A
IRFR034A
IRFR110A
IRFR120A
IRFR130A
IRFR210A
IRFR220A
IRFR230A
SSD2104
irfm014
SSP80N06
IRFU210A
IRFI530A
SSS7N60A
IRFU*230A
sss7n60a 951
SSP2N60A
IRF640A
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