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    IRFS35 Search Results

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    IRFS35 Price and Stock

    Rochester Electronics LLC IRFS350A

    MOSFET N-CH 400V 11.5A TO3PF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS350A Tube 188 122
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    • 1000 $2.46
    • 10000 $2.46
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    onsemi IRFS350A

    MOSFET N-CH 400V 11.5A TO3PF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS350A Tube
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    Infineon Technologies AG IRFS3507

    MOSFET N-CH 75V 97A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS3507 Tube 200
    • 1 -
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    • 1000 $2.16745
    • 10000 $2.16745
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    Infineon Technologies AG IRFS3507TRLPBF

    MOSFET N-CH 75V 97A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFS3507TRLPBF Reel 800
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    • 1000 $1.23059
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    Samsung Semiconductor IRFS350

    Mosfet N-ch 400V 11.5A TO-3PF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRFS350 10
    • 1 $6.23
    • 10 $6.23
    • 100 $1.71
    • 1000 $1.5
    • 10000 $1.5
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    Find more IRFS35 price and stock on Findchips.com

    IRFS35 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS350 Fairchild Semiconductor N-CHANNEL POWER MOSFET Original PDF
    IRFS350 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS350 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS350 Unknown FET Data Book Scan PDF
    IRFS350 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS3507 International Rectifier Power MOSFET Original PDF
    IRFS3507 International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS3507 with Standard Packaging Original PDF
    IRFS3507PBF International Rectifier 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFS3507 with Lead Free Packaging Original PDF
    IRFS3507PBF International Rectifier Original PDF
    IRFS3507TRLPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 97A D2PAK Original PDF
    IRFS350A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS350A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS350A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS351 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS351 Unknown FET Data Book Scan PDF
    IRFS351 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFS352 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS352 Unknown FET Data Book Scan PDF
    IRFS353 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS353 Unknown FET Data Book Scan PDF

    IRFS35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.


    Original     		PDF 96903B IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418.

    IRFS350

    Abstract: sec irfs350
    Text: $GYDQFHG 3RZHU 026 7 IRFS350 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		PDF IRFS350 IRFS350 sec irfs350

    Untitled

    Abstract: No abstract text available
    Text: PD - 96903 IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418.

    IRFS350A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFS350A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.3Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V


    Original     		PDF IRFS350A IRFS350A

    AN-994

    Abstract: IRFB3507 IRFS3507 IRFSL3507
    Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.


    Original     		PDF 96903B IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418. AN-994 IRFB3507 IRFS3507 IRFSL3507

    AN-994

    Abstract: No abstract text available
    Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418. AN-994

    AN-994

    Abstract: IRFB3507 IRFS3507 IRFSL3507
    Text: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.


    Original     		PDF 96903B IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 EIA-418. AN-994 IRFB3507 IRFS3507 IRFSL3507

    Untitled

    Abstract: No abstract text available
    Text: PD - 96903A IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 6903A IRFB3507 IRFS3507 IRFSL3507 O-220AB O-262 Dissi26)

    Untitled

    Abstract: No abstract text available
    Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418.

    Untitled

    Abstract: No abstract text available
    Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418.

    High Efficiency Synchronous Rectification in SMPS

    Abstract: AN-994
    Text: PD - 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 95935B IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB EIA-418. High Efficiency Synchronous Rectification in SMPS AN-994

    19-AF

    Abstract: AN-994
    Text: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 5935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF O-262 O-220AB Curren26) 19-AF AN-994

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    SOT-224

    Abstract: IRF540NPBF IRF1010E IRFZ44NPBF IRLL024NPBF IRFL014NTRPBF IRF7478T irfp4710 sot224 irfp044npbf
    Text: 1966-2012:QuarkCatalogTempNew 9/18/12 3:29 PM Page 1966 25 TEST & MEASUREMENT Power MOSFETs Continued INTERCONNECT Power MOSFETs N Channel, 55 Volt VDSS RoHS ASSEMBLY SEMICONDUCTORS OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES TO-220AB D2-PAK INDEX


    Original     		PDF O-220AB OT-223 O-262 7001PBF IRFZ48VSPBF IRF7478QPBF IRF7478TRPBF IRFZ44ESTRRPBF O-220AB SOT-224 IRF540NPBF IRF1010E IRFZ44NPBF IRLL024NPBF IRFL014NTRPBF IRF7478T irfp4710 sot224 irfp044npbf

    IRFS350A

    Abstract: No abstract text available
    Text: IRFS350A A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO -3PF ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350A IRFS350A

    Untitled

    Abstract: No abstract text available
    Text: IRFS350A Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350A

    Untitled

    Abstract: No abstract text available
    Text: IRFS350A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 400 V Avalanche Rugged Technofogy Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ Low Rds(0N) : 0 254 Q. (Typ.)


    OCR Scan     		PDF IRFS350A IRFS35

    IRFS351

    Abstract: 250M IRFS350
    Text: N-CHANNEL POWER MOSFETS IRFS350/351 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS350/351 IRFS350 IRFS351 250M

    Untitled

    Abstract: No abstract text available
    Text: IRFS350A A dvanced Power MOSEET FEATURES B V DSS - 400 V Rugged Gate Oxide Technology ^ D S o n = 0 .3 ^ • Lower Input Capacitance lD = 11.5 A ■ Improved Gate Charge ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350A 0G3b333 QG3b33M G03b335

    IRFS350

    Abstract: No abstract text available
    Text: IRFS350 A dvanced Power MOSFET FEATURES BVDSS — 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = 0 -3 Í2 ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -3 P F ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350 IRFS350

    sec irfs350

    Abstract: No abstract text available
    Text: IRFS350 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology = 0.3Q ♦ Rugged Gate Oxide Technology ^ D S o n ♦ Lower Input Capacitance lD = 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350 sec irfs350

    Untitled

    Abstract: No abstract text available
    Text: IRFS350 Advanced Power MOSFET FEATURES B V DSS - 400 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .3 Î2 11.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350

    Untitled

    Abstract: No abstract text available
    Text: IRFS350A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 400V ■ Low R qs<o n i - 0.254 £2 (Typ.)


    OCR Scan     		PDF IRFS350A

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640