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    IRFR224 Price and Stock

    Vishay Siliconix IRFR224PBF

    MOSFET N-CH 250V 3.8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR224PBF Tube 2,147 1
    • 1 $1.53
    • 10 $0.981
    • 100 $0.6657
    • 1000 $0.58612
    • 10000 $0.58612
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    ComSIT USA IRFR224PBF 800
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    Vishay Siliconix IRFR224TRPBF-BE3

    N-CHANNEL 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR224TRPBF-BE3 Reel 2,000 2,000
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    • 10000 $0.625
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    IRFR224TRPBF-BE3 Digi-Reel 1
    • 1 $1.49
    • 10 $1.237
    • 100 $0.9848
    • 1000 $0.707
    • 10000 $0.707
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    IRFR224TRPBF-BE3 Cut Tape 1
    • 1 $1.49
    • 10 $1.237
    • 100 $0.9848
    • 1000 $0.707
    • 10000 $0.707
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    Vishay Siliconix IRFR224TRPBF

    MOSFET N-CH 250V 3.8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR224TRPBF Cut Tape 1,690 1
    • 1 $2.25
    • 10 $1.446
    • 100 $0.9829
    • 1000 $0.72046
    • 10000 $0.72046
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    IRFR224TRPBF Digi-Reel 1
    • 1 $2.25
    • 10 $1.446
    • 100 $0.9829
    • 1000 $0.72046
    • 10000 $0.72046
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    IRFR224TRPBF Reel 2,000
    • 1 -
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    • 10000 $0.61543
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    Vishay Siliconix IRFR224

    MOSFET N-CH 250V 3.8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR224 Tube
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    ComSIT USA IRFR224 2,850
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    Vishay Siliconix IRFR224TR

    MOSFET N-CH 250V 3.8A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFR224TR Reel 2,000
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    • 10000 $1.47834
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    Find more IRFR224 price and stock on Findchips.com

    IRFR224 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFR224 International Rectifier Power MOSFET Original PDF
    IRFR224 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR224 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 3.8A DPAK Original PDF
    IRFR224 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR224 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFR224 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFR224 International Rectifier Surface Mount HEXFETs Scan PDF
    IRFR224 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFR224 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFR224A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFR224A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFR224A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFR224B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFR224B Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    IRFR224B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFR224BTF Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A Original PDF
    IRFR224BTF_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A Original PDF
    IRFR224BTM Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A Original PDF
    IRFR224BTM_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A Original PDF
    IRFR224BTM_NL Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A Original PDF

    IRFR224 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFR224B

    Abstract: IRFU224B
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFU224B

    95237

    Abstract: No abstract text available
    Text: PD- 95237 IRFR224PbF IRFU224PbF • Lead-Free www.irf.com 1 05/05/04 IRFR/U224PbF 2 www.irf.com IRFR/U224PbF www.irf.com 3 IRFR/U224PbF 4 www.irf.com IRFR/U224PbF www.irf.com 5 IRFR/U224PbF 6 www.irf.com IRFR/U224PbF www.irf.com 7 IRFR/U224PbF D-Pak TO-252AA Package Outline


    Original     		PDF IRFR224PbF IRFU224PbF IRFR/U224PbF O-252AA) 95237

    Untitled

    Abstract: No abstract text available
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 2002/95/EC O-252)

    Vishay DaTE CODE

    Abstract: EIA-541 IRFU120 R120 U120
    Text: PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free Document Number: 91271 12/03/04 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF


    Original     		PDF 5237A IRFR224PbF IRFU224PbF IRFR/U224PbF Vishay DaTE CODE EIA-541 IRFU120 R120 U120

    Untitled

    Abstract: No abstract text available
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 1.1 Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224)


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 O-252) O-251)

    Untitled

    Abstract: No abstract text available
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFU224B IRFU224 IRFU224A IRFU224BTU FP001 O-251

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRFR224 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.1Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V


    Original     		PDF IRFR224

    IRFR224

    Abstract: IRFU224 SiHFR224 SiHFR224-E3
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration RoHS* • Surface Mount (IRFR224/SiHFR224) COMPLIANT


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 IRFU224/SiHFU224) O-252) IRFR224/SiHFR224) O-251) 18-Jul-08 IRFR224 IRFU224 SiHFR224-E3

    VISHAY MARKING CODE

    Abstract: No abstract text available
    Text: PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free Document Number: 91271 12/03/04 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF


    Original     		PDF 5237A IRFR224PbF IRFU224PbF IRFR/U224PbF VISHAY MARKING CODE

    IRFR224A

    Abstract: No abstract text available
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFR224BTM FP001 O-252 IRFR224BTF FP001 IRFR224A

    Untitled

    Abstract: No abstract text available
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 2002/95/EC O-252)

    EIA-541

    Abstract: IRFU120 R120 U120
    Text: PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free www.irf.com 1 12/03/04 IRFR/U224PbF 2 www.irf.com IRFR/U224PbF www.irf.com 3 IRFR/U224PbF 4 www.irf.com IRFR/U224PbF www.irf.com 5 IRFR/U224PbF 6 www.irf.com IRFR/U224PbF www.irf.com 7 IRFR/U224PbF D-Pak TO-252AA Package Outline


    Original     		PDF 5237A IRFR224PbF IRFU224PbF IRFR/U224PbF EIA-541 IRFU120 R120 U120

    IRFR224

    Abstract: IRFU224 SiHFR224 SiHFR224-E3 IRFU N-Channel Power MOSFETs
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 O-252) O-251) IRFR224 IRFU224 SiHFR224-E3 IRFU N-Channel Power MOSFETs

    Untitled

    Abstract: No abstract text available
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 1.1 Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224)


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 O-252) O-251)

    IRFR224B

    Abstract: IRFU224B
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFU224B

    SiHFR224TR-GE3

    Abstract: No abstract text available
    Text: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)


    Original     		PDF IRFR224, IRFU224, SiHFR224 SiHFU224 2002/95/EC O-252) SiHFR224TR-GE3

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    1RFR224

    Abstract: AN-994 IRFR224 IRFU224 1RFU224
    Text: International S Rectifier PD-9.600A IRFR224 IRFU224 HEXFET P ow er M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224) Available in Tape & Reel Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRFR224 IRFR224) IRFU224) 1RFR224 AN-994 IRFR224 IRFU224 1RFU224

    IRFR224

    Abstract: No abstract text available
    Text: IRFR224 A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR224 IRFR224

    Untitled

    Abstract: No abstract text available
    Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)


    OCR Scan     		PDF Mfl55452 IRFR224 IRFU224 IRFR224) IRFU224)

    034AA

    Abstract: No abstract text available
    Text: IRFR224 Advanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 ^ 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR224 034AA

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFR224/U224 FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness » Fast sw itching tim es 2 • Rugged polysilicon gate cell structure « • Low er input cap acitance * •Extended sa fe operating area • Improved high tem perature reliability


    OCR Scan     		PDF IRFR224/U224 IRFR224 IRFU224 Jb4142

    Untitled

    Abstract: No abstract text available
    Text: IRFR224 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance CO bo ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V


    OCR Scan     		PDF IRFR224