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    IRFR P-CHANNEL MOSFET Search Results

    IRFR P-CHANNEL MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    IRFR P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET IRF 380

    Abstract: No abstract text available
    Text: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF IRFR/U9120NPbF IRFR9120N) IRFU9120N) -100V O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 380

    IRFU9120N

    Abstract: IRFR9120N
    Text: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF IRFR/U9120N IRFR9120N) IRFU9120N) -100V IRFU9120N IRFR9120N

    U9024N

    Abstract: IRFU9024N IRF9Z24N IRFR9024N
    Text: PD - 9.1506 PRELIMINARY IRFR/U9024N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.175Ω


    Original     		PDF IRFR/U9024N IRFR9024N) IRFU9024N) U9024N IRFU9024N IRF9Z24N IRFR9024N

    IRFR5410

    Abstract: IRFU5410 100v P-Channel DPAK U5410
    Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V IRFR5410 IRFU5410 100v P-Channel DPAK U5410

    IRFR P-Channel MOSFET

    Abstract: IRFR5410 IRFU5410 pcb layout for TO 252AA
    Text: PD - 9.1533A IRFR/U5410 l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205W G ID = -13A S Description


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V IRFR P-Channel MOSFET IRFR5410 IRFU5410 pcb layout for TO 252AA

    IRFR6215

    Abstract: IRFU6215
    Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω


    Original     		PDF IRFR/U6215 IRFR6215) IRFU6215) -150V IRFR6215 IRFU6215

    irf*24n

    Abstract: U9024N IRF9Z24N IRFU9024N IRFR9024N 20V P-Channel Power MOSFET 100A
    Text: PD - 9.1506 PRELIMINARY IRFR/U9024N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.175Ω


    Original     		PDF IRFR/U9024N IRFR9024N) IRFU9024N) irf*24n U9024N IRF9Z24N IRFU9024N IRFR9024N 20V P-Channel Power MOSFET 100A

    IRFR9120N

    Abstract: IRFU9120N 14.5M 1982 U912
    Text: PD - 9.1507A PRELIMINARY IRFR/U9120N HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF IRFR/U9120N IRFR9120N) IRFU9120N) -100V IRFR9120N IRFU9120N 14.5M 1982 U912

    Untitled

    Abstract: No abstract text available
    Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω


    Original     		PDF IRFR/U6215 IRFR6215) IRFU6215) -150V

    Untitled

    Abstract: No abstract text available
    Text: PD - 95375 PRELIMINARY IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A


    Original     		PDF IRFR9214) IRFU9214) IRFR/U9214PbF -250V O-252AA) EIA-481 EIA-541. EIA-481.

    el 1533

    Abstract: IRFR5410 IRFU5410
    Text: PD - 9.1533 IRFR/U5410 PRELIMINARY HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -100V RDS(on) = 0.205Ω G


    Original     		PDF IRFR/U5410 IRFR5410) IRFU5410) -100V el 1533 IRFR5410 IRFU5410

    IRF 870

    Abstract: HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260
    Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S


    Original     		PDF 5375A IRFR/U9214PbF IRFR9214) IRFU9214) -250V 12-Mar-07 IRF 870 HEXFET Power MOSFET P-Channel IRFR9214 IRFU9214 IRF MOSFET 260

    IRFR6215

    Abstract: IRFU6215
    Text: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω


    Original     		PDF IRFR/U6215 IRFR6215) IRFU6215) -150V IRFR6215 IRFU6215

    IRF 870

    Abstract: mosfet IRF 870 IRFR9214 IRFU9214
    Text: PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = -250V l RDS(on) = 3.0Ω G ID = -2.7A S


    Original     		PDF 5375A IRFR/U9214PbF IRFR9214) IRFU9214) -250V O-252AA) EIA-481 EIA-541. EIA-481. IRF 870 mosfet IRF 870 IRFR9214 IRFU9214

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -250V RDS(on) = 3.0Ω G ID = -2.7A S Description Third Generation HEXFETs from International Rectifier


    Original     		PDF IRFR/U9214 IRFR9214) IRFU9214) -250V 08-Mar-07

    IRFU

    Abstract: IRFU 310
    Text: P D - 9 1610A International IO R Rectifier IRFR/U5505 PRELIM INARY HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR 5505 Straight Lead (IRFU 5505) Advanced Process Technology Fast Switching Fully Avalanche Rated V d s s = -5 5 V


    OCR Scan     		PDF IRFR/U5505 EIA-481 IRFU IRFU 310

    FR9214

    Abstract: No abstract text available
    Text: International IO R Rectifier P D - 9.1658 IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IR F R 9214 StraightLead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R ü S (o n ) = 3 . 0 C Ì b = -2.8A


    OCR Scan     		PDF IRFU9214N IRFR/U9214 -250V EIA-481. FR9214

    U5410

    Abstract: No abstract text available
    Text: PD - 9.1533 International IQR Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5410 • Straight Lead (IRFU5410) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRFR5410) IRFU5410) IRFR/U5410 -100V U5410

    Untitled

    Abstract: No abstract text available
    Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRFR/U5505 IRFR5505) IRFU5505)

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1507A International IQ R Rectifier PRELIMINARY IRFR/U9120N HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR9120N • Straight Lead (IRFU9120N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRFR9120N) IRFU9120N) IRFR/U9120N -100V

    Untitled

    Abstract: No abstract text available
    Text: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated


    OCR Scan     		PDF IRFR6215) IRFU6215) IRFR/U6215 -150V

    Untitled

    Abstract: No abstract text available
    Text: P D -9 .1 5 3 3 International IQ R Rectifier IRFR/U5410 PRELIMINARY HEXFET Power MOSFET Ultra Low O n-Resistance P-Channel Surface M ount IR FR 5410 Straight Lead (IR FU 5410) A dvanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -1 0 0 V


    OCR Scan     		PDF IRFR/U5410

    ior 481 mosfet

    Abstract: IRFR9214 IRFU9214N IOR 235
    Text: 4 PD - 9.1658 International IO R Rectifier IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel Surface Mount IRFR9214 Straight Lead (IRFU9214N Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -250V R D S (on) = 3 0 Q Id = -2.8A


    OCR Scan     		PDF IRFR/U9214 IRFR9214) IRFU9214N M655M52 ior 481 mosfet IRFR9214 IOR 235

    c416 diode

    Abstract: C417 IRFU9024N c418
    Text: International IGR Rectifier PD-9.1506A IRFR/U9024N HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR9024N • Straight Lead (IRFU9024N) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated V dss = -55V


    OCR Scan     		PDF IRFR9024N) IRFU9024N) IRFR/U9024N C-418 C-419 c416 diode C417 IRFU9024N c418