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    IRFP4 Price and Stock

    Infineon Technologies AG IRFP4321PBF

    MOSFET N-CH 150V 78A TO247AC
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    DigiKey IRFP4321PBF Tube 6,951 1
    • 1 $3.62
    • 10 $2.406
    • 100 $1.888
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    Avnet Americas IRFP4321PBF Tube 400 12 Weeks 25
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    RS IRFP4321PBF Bulk 2
    • 1 -
    • 10 $3.35
    • 100 $3
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    Quest Components IRFP4321PBF 304
    • 1 $6.33
    • 10 $6.33
    • 100 $3.9035
    • 1000 $3.4815
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    TME IRFP4321PBF 394 1
    • 1 $3.2
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    • 100 $2.31
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    Rutronik IRFP4321PBF Tube 250 25
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    • 100 $1.87
    • 1000 $1.53
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    Chip1Stop IRFP4321PBF Tube 7,820
    • 1 $2.03
    • 10 $1.8
    • 100 $1.76
    • 1000 $1.76
    • 10000 $1.62
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    IRFP4321PBF 6,750
    • 1 $4.19
    • 10 $2.89
    • 100 $1.75
    • 1000 $1.56
    • 10000 $1.51
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    CoreStaff Co Ltd IRFP4321PBF 385
    • 1 $3.17
    • 10 $2.32
    • 100 $2.17
    • 1000 $2.11
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    Vishay Siliconix IRFP460PBF

    MOSFET N-CH 500V 20A TO247-3
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    DigiKey IRFP460PBF Tube 6,213 1
    • 1 $4.53
    • 10 $4.53
    • 100 $3.0795
    • 1000 $2.34385
    • 10000 $2.20698
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    RS IRFP460PBF Bulk 500
    • 1 -
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    • 1000 $6.51
    • 10000 $5.54
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    Infineon Technologies AG IRFP4227PBF

    MOSFET N-CH 200V 65A TO247AC
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    DigiKey IRFP4227PBF Tube 2,275 1
    • 1 $5.19
    • 10 $3.457
    • 100 $2.4721
    • 1000 $1.98788
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    RS IRFP4227PBF Bulk 1
    • 1 $3.91
    • 10 $3.52
    • 100 $3.32
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    Quest Components IRFP4227PBF 266
    • 1 $7.41
    • 10 $7.41
    • 100 $4.5695
    • 1000 $4.0755
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    Rochester Electronics IRFP4227PBF 6,074 1
    • 1 $2.32
    • 10 $2.32
    • 100 $2.18
    • 1000 $1.97
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    TME IRFP4227PBF 177 1
    • 1 $3.69
    • 10 $3.26
    • 100 $2.55
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    Rutronik IRFP4227PBF Tube 300 25
    • 1 -
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    • 100 $2.07
    • 1000 $1.69
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    CoreStaff Co Ltd IRFP4227PBF 333
    • 1 $3.04
    • 10 $2.71
    • 100 $2.574
    • 1000 $2.47
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    EBV Elektronik IRFP4227PBF 13 Weeks 400
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    New Advantage Corporation IRFP4227PBF 275 1
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    Win Source Electronics IRFP4227PBF 74,600
    • 1 -
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    • 100 $1.531
    • 1000 $1.244
    • 10000 $1.244
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    Infineon Technologies AG IRFP4004PBF

    MOSFET N-CH 40V 195A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP4004PBF Tube 1,396 1
    • 1 $6.23
    • 10 $6.23
    • 100 $3.0303
    • 1000 $2.54012
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    Avnet Americas IRFP4004PBF Tube 300 12 Weeks 25
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    • 1000 $1.87121
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    Mouser Electronics IRFP4004PBF 414
    • 1 $5.33
    • 10 $5.33
    • 100 $3.04
    • 1000 $2.54
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    Arrow Electronics IRFP4004PBF 389 12 Weeks 1
    • 1 $4.1906
    • 10 $4.1906
    • 100 $2.8678
    • 1000 $2.1972
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    IRFP4004PBF 4 12 Weeks 1
    • 1 $1.565
    • 10 $1.565
    • 100 $1.554
    • 1000 $1.554
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    Newark IRFP4004PBF Bulk 219 1
    • 1 $4.96
    • 10 $4.84
    • 100 $3.52
    • 1000 $2.81
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    RS IRFP4004PBF Bulk 1
    • 1 $4.13
    • 10 $3.71
    • 100 $3.5
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    Rochester Electronics IRFP4004PBF 8,040 1
    • 1 $2.96
    • 10 $2.96
    • 100 $2.79
    • 1000 $2.52
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    TME IRFP4004PBF 35 1
    • 1 $4.87
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    • 100 $3.48
    • 1000 $3.02
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    New Advantage Corporation IRFP4004PBF 2,150 1
    • 1 -
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    • 100 $2.67
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    • 10000 $2.49
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    Infineon Technologies AG IRFP4229PBF

    MOSFET N-CH 250V 44A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFP4229PBF Tube 1,150 1
    • 1 $3.88
    • 10 $2.589
    • 100 $2.074
    • 1000 $2.074
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    RS IRFP4229PBF Bulk 2
    • 1 -
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    • 100 $3.98
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    Rochester Electronics IRFP4229PBF 962 1
    • 1 $2.42
    • 10 $2.42
    • 100 $2.27
    • 1000 $2.06
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    TME IRFP4229PBF 50 1
    • 1 $4.52
    • 10 $3.46
    • 100 $3.12
    • 1000 $3.12
    • 10000 $3.12
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    Rutronik IRFP4229PBF Tube 400 25
    • 1 -
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    • 100 $2.16
    • 1000 $1.77
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    New Advantage Corporation IRFP4229PBF 3,900 1
    • 1 -
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    • 100 $2.23
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    Find more IRFP4 price and stock on Findchips.com

    IRFP4 Datasheets (331)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFP4004PBF International Rectifier IRFP4004PBF Original PDF
    IRFP4110PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFP4127PBF Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 75A TO-247AC Original PDF
    IRFP4137PBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 38A TO-247AC Original PDF
    IRFP420 Unknown FET Data Book Scan PDF
    IRFP421 Unknown FET Data Book Scan PDF
    IRFP422 Unknown FET Data Book Scan PDF
    IRFP4227PBF International Rectifier PDP SWITCH Original PDF
    IRFP4228PBF International Rectifier Original PDF
    IRFP4229PBF International Rectifier Original PDF
    IRFP423 Unknown FET Data Book Scan PDF
    IRFP4232PBF International Rectifier PDP Mosfet Original PDF
    IRFP4242PBF International Rectifier PDP MOSFET Original PDF
    IRFP430 Unknown FET Data Book Scan PDF
    IRFP430 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFP431 Unknown FET Data Book Scan PDF
    IRFP431 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    IRFP4310ZPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFP432 Unknown FET Data Book Scan PDF
    IRFP432 Samsung Electronics N-Channel Power MOSFETS Scan PDF
    ...

    IRFP4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet k 2038

    Abstract: IRFP450A
    Text: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFP450A, SiHFP450A O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet k 2038 IRFP450A

    Untitled

    Abstract: No abstract text available
    Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFP450LC, SiHFP450LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    irfp460

    Abstract: irfp460 30v
    Text: IRFP460 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE IRFP460 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRFP460 O-247 irfp460 irfp460 30v

    035H

    Abstract: IRFPE30 91231
    Text: PD - 95056 IRFP450LCPbF • Lead-Free Document Number: 91231 2/26/04 www.vishay.com 1 IRFP450LCPbF Document Number: 91231 www.vishay.com 2 IRFP450LCPbF Document Number: 91231 www.vishay.com 3 IRFP450LCPbF Document Number: 91231 www.vishay.com 4 IRFP450LCPbF


    Original     		PDF IRFP450LCPbF O-247AC 12-Mar-07 035H IRFPE30 91231

    035H

    Abstract: IRFPE30
    Text: PD - 94852 IRFP450PbF • Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233


    Original     		PDF IRFP450PbF O-247AC 12-Mar-07 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD-93946A IRFP460P l l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder Plated for Reflowing HEXFET Power MOSFET D VDSS = 500V RDS on = 0.27Ω G


    Original     		PDF PD-93946A IRFP460P O-247 O-220 O-218 08-Mar-07

    irfp450n

    Abstract: IRFPE30
    Text: PD- 94216 SMPS MOSFET IRFP450N HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		PDF IRFP450N O-247AC irfp450n IRFPE30

    IRFP P CHANNEL MOSFET

    Abstract: IRFP440B
    Text: IRFP440B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF IRFP440B IRFP P CHANNEL MOSFET IRFP440B

    Untitled

    Abstract: No abstract text available
    Text: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFP450LC, SiHFP450LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFP460A

    Abstract: No abstract text available
    Text: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche


    Original     		PDF IRFP460A O-247 IRFP460A

    IRFP460 APPLICATION NOTE

    Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
    Text: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFP460 IRFP460 APPLICATION NOTE IRFP460 application IRFP460 transistor irfp460 dc motor circuit

    Untitled

    Abstract: No abstract text available
    Text: IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 49 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement


    Original     		PDF IRFP460LC, SiHFP460LC O-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    4460 MOSFET

    Abstract: AN-1005 IRFP432 IRFP4321
    Text: PD - 97106 IRFP4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching


    Original     		PDF IRFP4321PbF O-247AC IRFPE30 4460 MOSFET AN-1005 IRFP432 IRFP4321

    Untitled

    Abstract: No abstract text available
    Text: IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFP460C 130nC)

    HA1190

    Abstract: No abstract text available
    Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


    OCR Scan     		PDF IRFP440A HA1190

    IRFP440

    Abstract: RA3A
    Text: PD-9.457C International ï^R Rectifier IRFP440 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 500 V V DSS =


    OCR Scan     		PDF IRFP440 O-247 O-220 O-218 IRFP440 RA3A

    IRFP450

    Abstract: IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY
    Text: -Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 50 75 100 125 T q . C A S E T E M P E R A T U R E °C Fig. 12 — T yp ica l O n-R e sistance V s. D rain C urrent Fig. 13 — M a x im u m D ra in C u rre n t V s. Case Tem perature T E l * 0.5 B V q S S


    OCR Scan     		PDF IRFP450, IRFP451, IRFP452, IRFP453 IRFP450 IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY

    IRFP452

    Abstract: IRFP453 Scans-00102310 GE 048 TRANSISTOR
    Text: IRFP452,453 [F U F 12 AMPERES 500, 450 VOLTS RDS ON =0.5 n RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability.


    OCR Scan     		PDF 00A///sec, IRFP452 IRFP453 Scans-00102310 GE 048 TRANSISTOR

    IRFP460

    Abstract: irfp460 power supply applications IRFP462 irfp460 dc motor circuit IRFP460 IR PED relay irfp460 i
    Text: IRFP460, IRFP462 fÇ j HARRIS S E M I C O N D U C T O R 20A and 17A, 500V, 0.27 and 0.35 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFP460, IRFP462 TA17465. IRFP460 irfp460 power supply applications IRFP462 irfp460 dc motor circuit IRFP460 IR PED relay irfp460 i

    Untitled

    Abstract: No abstract text available
    Text: IRFP460 S e m iconductor Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET • 2 0 A ,5 0 0 V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFP460 O-247 270i2 TB334 TA17465.

    Untitled

    Abstract: No abstract text available
    Text: IRFP450 S e m iconductor Data Sheet July 1999 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 14A ,500V Ordering Information • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFP450 O-247 400i2 TB334 TA17435.

    Untitled

    Abstract: No abstract text available
    Text: IRFP450 N - CHANNEL 500V - 0.33Í2 - 14A - TO-247 PowerMESH MOSFET TYPE IR F P 4 5 0 V R d s s 500 V d Id S o ii < 0.4 Q. 14 A • TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED


    OCR Scan     		PDF IRFP450 O-247 P025P

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFP450/451 FEATURES • Lower R d s i o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFP450/451 IRFP450 IRFP451 7Tb414e

    Untitled

    Abstract: No abstract text available
    Text: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00


    OCR Scan     		PDF IRFP440A G03b332 0G3b333