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    Vishay Siliconix IRFP264NPBF

    MOSFET N-CH 250V 44A TO247-3
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    IRFP264N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFP264N International Rectifier HEXFET Power Mosfet Original PDF
    IRFP264NPBF International Rectifier 250V Single N-Channel Lead-Free HEXFET Power MOSFET in a TO-247AC package Original PDF
    IRFP264NPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 44A TO-247AC Original PDF

    IRFP264N Datasheets Context Search

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    IRFP264N

    Abstract: IRFP264n equivalent SiHFP264N
    Text: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating


    Original     		PDF IRFP264N, SiHFP264N O-247 18-Jul-08 IRFP264N IRFP264n equivalent

    035H

    Abstract: IRFPE30 IRFP264NPBF
    Text: PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF IRFP264NPbF O-247 O-247AC IRFPE30 035H IRFPE30 IRFP264NPBF

    IRFP264N

    Abstract: 035H IRFPE30
    Text: PD - 94214A IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF 4214A IRFP264N O-247 IRFPE30 IRFP264N 035H IRFPE30

    035H

    Abstract: IRFPE30 P-CHANNEL 25A TO-247 POWER MOSFET
    Text: PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF IRFP264NPbF O-247 12-Mar-07 035H IRFPE30 P-CHANNEL 25A TO-247 POWER MOSFET

    Untitled

    Abstract: No abstract text available
    Text: PD - 94214A IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF 4214A IRFP264N O-247 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating


    Original     		PDF IRFP264N, SiHFP264N O-247 12-Mar-07

    IRFP264N

    Abstract: 035H IRFPE30
    Text: PD - 94214 IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF IRFP264N O-247 O-247AC IRFPE30 IRFP264N 035H IRFPE30

    Untitled

    Abstract: No abstract text available
    Text: PD - 94811 IRFP264NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF IRFP264NPbF O-247 08-Mar-07

    20V P-Channel Power MOSFET 500A

    Abstract: 035H IRFP264N IRFPE30
    Text: PD - 94214A IRFP264N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 60mΩ G ID = 44A


    Original     		PDF 4214A IRFP264N O-247 12-Mar-07 20V P-Channel Power MOSFET 500A 035H IRFP264N IRFPE30

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


    Original     		PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Tape and Reel upon request , Chip Pack, and Sawn on Film ‚ G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)


    Original     		PDF IRFC264NB 100nA

    IRFP460Z

    Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
    Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB


    Original     		PDF O-220 IRFP460Z IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205

    IRFP264n equivalent

    Abstract: IRFC264
    Text: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Tape and Reel upon request , Chip Pack, and Sawn on Film ‚ G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)


    Original     		PDF IRFC264NB 100nA 12-Mar-07 IRFP264n equivalent IRFC264

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor