IRFP240 transistor
Abstract: No abstract text available
Text: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP240
IRFP240 transistor
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IRFP240
Abstract: irfp240 transistor TA17422 TB334
Text: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP240
TA17422.
O-247
200opment.
IRFP240
irfp240 transistor
TA17422
TB334
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IRFP240
Abstract: TA17422 TB334
Text: IRFP240 Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP240
TA17422.
O-247
IRFP240
TA17422
TB334
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IRFP240
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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IRFP240,
SiHFP240
O-247AC
O-220AB
O-247AC
O-218
11-Mar-11
IRFP240
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Untitled
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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IRFP240,
SiHFP240
O-247AC
O-220AB
O-247AC
O-218
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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irfp240
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the
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IRFP240,
SiHFP240
O-247
O-247
O-220
12-Mar-07
irfp240
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Untitled
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP240,
SiHFP240
2002/95/EC
O-247AC
O-247AC
O-220trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP240
Abstract: irfp240pbf
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the
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IRFP240,
SiHFP240
O-247
O-247
O-220
O-218
18-Jul-08
IRFP240
irfp240pbf
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IRFP240
Abstract: paralleling SiHFP240 sihfp240-e3
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP240,
SiHFP240
O-247
O-247
O-220
O-218
18-Jul-08
IRFP240
paralleling
sihfp240-e3
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IRFP240PBF
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP240,
SiHFP240
2002/95/EC
O-247AC
O-247AC
O-220hay
11-Mar-11
IRFP240PBF
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PDF
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IRFP240
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP240,
SiHFP240
2002/95/EC
O-247AC
O-247AC
O-220trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
IRFP240
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Untitled
Abstract: No abstract text available
Text: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.18 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the
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Original
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IRFP240,
SiHFP240
O-247AC
O-220AB
O-247AC
O-218
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP240
Abstract: Harris Semiconductor irfp240 TA17422 irfp243 harris transistors IRFP241
Text: IRFP240, IRFP241, IRFP242, IRFP243 S E M I C O N D U C T O R 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFP240,
IRFP241,
IRFP242,
IRFP243
TA17422.
1-800-4-HARRIS
IRFP240
Harris Semiconductor irfp240
TA17422
irfp243
harris transistors
IRFP241
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irfp240
Abstract: irfp240 circuit diagram IRFP240FI 71513 schematic diagram UPS irfp240f
Text: 2 ^ 5 3 7 0 0 4 S 733 S 3 T • SGTH SCS-THOMSON IRFP240 IRFP240FI ID MaiOT(ö MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP240 IRFP240FI . ■ . . V dss RüS(on) Id 200 V 200 V < 0.18 n < 0.18 Q 20 A 12 A TYPICAL RDS(on) = 0.145 Q AVALANCHE RUGGED TECHNOLOGY
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OCR Scan
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00M5733
IRFP240
IRFP240FI
IRFP240
IRFP240FI
IRFP240/FI
004S73Ã
irfp240 circuit diagram
71513
schematic diagram UPS
irfp240f
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IRFP630
Abstract: Irfp250 irfp460 IRFPG60
Text: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460
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OCR Scan
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247ac
T0-247AC
IRFP044
IRFP048
IRFP054
IRFP064
IRFP140
IRFP150
IRFP240
IRFP250
IRFP630
Irfp250 irfp460
IRFPG60
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IRFP240
Abstract: 75150TC
Text: PD-9.444C International «»Rectifier IRFP240 HEXFEr Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Centra! Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description DATA SHEETS
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IRFP240
O-247
O-220
O-218
75150TC
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Untitled
Abstract: No abstract text available
Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRFP240
O-247
180i2
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IRFP240
Abstract: irfp240 ir
Text: PD-9.444C International S Rectifier IRFP240 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 0.18Q
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IRFP240
O-247
T0-220
O-218
IRFP240
irfp240 ir
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irf640
Abstract: irfp240 for irf640 irfp242 IRF640 n-channel MOSFET IRFP243 Diode c 642 IR 643 power MOSFET IRF640 Mosfet irfp240
Text: N-CHANNEL POWER MOSFETS IRF640/641/642/643 IRFP240/241/242/243 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate ceil structure Lower input capacitance Extended safe operating area
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IRF640/641/642/643
IRFP240/241/242/243
IRF640/IRFP140
IRF641
IRFP241
IRF642/IRFP242
1RF643/IRFP243
IRF640/641Z642/643
irf640
irfp240
for irf640
irfp242
IRF640 n-channel MOSFET
IRFP243
Diode c 642
IR 643
power MOSFET IRF640
Mosfet irfp240
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TO218 package
Abstract: irfp240 irfp240 circuit diagram IRFP240FI TO-218 Package
Text: SGS-THOMSON :U OT KS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR FP240 IRFP240FI . • . . V dss RüS(on Id 200 V 200 V 0.18 n 0.18 Q 20 A 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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IRFP240
IRFP240FI
FP240
FP240
FP240FI
15racteristics
IRFP240/H
IRFP240/FI
TO218 package
irfp240 circuit diagram
IRFP240FI
TO-218 Package
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Untitled
Abstract: No abstract text available
Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFP240,
IRFP241,
IRFP242,
IRFP243
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1RFP240
Abstract: IRFP240 IRFP241 IRFP243 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485
Text: INTERNATIONAL RECTIFIER HE D 1 4055455 OOGfi734 Data Sheet No. PD-9.444B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP240 IRFP241 IRFPS42 IRFP243 N-CHANNEL Product Summary 200 Volt, 0.18 Ohm HEXFET
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5S45E
IRFP241
O-247AC
C-489
IRFP240,
IRFP241,
IRFP242,
IRFP243
T-39-13
C-490
1RFP240
IRFP240
IRFP241
1fp2
irf 4710
IRFP 450
IRFP242
Part number 543 20 018 00
c485
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irfp240
Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
Text: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRFP240,
IRFP241,
IRFP242,
IRFP243
TA1742s
1-800-4-HARRIS
irfp240
IRFP242
IRFP243
Harris Semiconductor irfp240
Mosfet irfp240
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IRFP240
Abstract: IRF640 SAMSUNG
Text: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re
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OCR Scan
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IRF640/641
IRFP240/241/242/243
OG121TI
O-220
IRF640/IRFP140
IRF641
IRFP241
F642/IRFP242
IRF643/IRFP243
IRF640/641/642/643
IRFP240
IRF640 SAMSUNG
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