IRFP150
Abstract: IRFP150FI irfp.150
Text: IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID IRFP150 IRFP150FI 100 V 100 V < 0.055 Ω < 0.055 Ω 40 A 23 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.035 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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IRFP150
IRFP150FI
100oC
175oC
O-218
ISOWATT218
IRFP150
IRFP150FI
irfp.150
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PDF
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sil 5102
Abstract: IRFP150 TB334
Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()
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Original
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IRFP150
sil 5102
IRFP150
TB334
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PDF
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irfp150
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp150
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
O-247AC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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IRFP150
Abstract: TA17431 IRFP151 IRFP153 IRFP152 TB334 12V 40A motor Relay 170uH
Text: IRFP150, IRFP151, IRFP152, IRFP153 Semiconductor 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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Original
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IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP150
TA17431
IRFP151
IRFP153
IRFP152
TB334
12V 40A motor Relay
170uH
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PDF
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4311 mosfet transistor
Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Text: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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Original
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IRFP150
TA17431.
O-247
4311 mosfet transistor
tl 4311
transistor tl 4311
IRFP150
TB334
T2T-2
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFP150
Abstract: application notes irfp150
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
O-247AC
2002/95/EC
11-Mar-11
IRFP150
application notes irfp150
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
O-247AC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFP150
Abstract: application notes irfp150 IRFP150P
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
O-247
O-247
18-Jul-08
IRFP150
application notes irfp150
IRFP150P
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PDF
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application notes irfp150
Abstract: IRFP150P
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
2002/95/EC
O-247AC
O-247AC
11-Mar-11
application notes irfp150
IRFP150P
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PDF
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IRFP150
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP150,
SiHFP150
O-247
O-247
12-Mar-07
IRFP150
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PDF
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IRFP150
Abstract: C4023 GC527 IRFP150FI c2814 TC08 Tc03s
Text: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY
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OCR Scan
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IRFP150
IRFP150FI
IRFP150
IRFP150FI
IRFP150/FI
7TSTS37
00MS732
C4023
GC527
c2814
TC08
Tc03s
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PDF
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Untitled
Abstract: No abstract text available
Text: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY
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OCR Scan
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IRFP150
IRFP150FI
00457E7
IRFP150/FI
7TE1S37
00M5732
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PDF
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IRFP630
Abstract: Irfp250 irfp460 IRFPG60
Text: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460
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OCR Scan
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247ac
T0-247AC
IRFP044
IRFP048
IRFP054
IRFP064
IRFP140
IRFP150
IRFP240
IRFP250
IRFP630
Irfp250 irfp460
IRFPG60
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PDF
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFP150/151 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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OCR Scan
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IRFP150/151
IRFP150
IRFP151
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PDF
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9442
Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Text: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243
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OCR Scan
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O-247
4flSS452
Q010557
T-39-Ã
IRFP054
T0-247AC
IRFP044
IRFP045
IRFP151
IRFP153
9442
IRFP460
IRFP240
IRFPE20
IRFPG42
IRFP142
IRFP141
IR*343
IRFP143
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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IRFP150
O-247
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PDF
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1RFP150
Abstract: 441D IRFP150
Text: International ior Rectifier PD-9.441D IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRFP150
O-247
T0-220
O-218
1RFP150
441D
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PDF
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mosfet IRF 3306
Abstract: IRFPI50 IRPF IRFP151 ocr31 transistor irfp 100-C IRFP150 IRFP152 IRFP153
Text: Standard Power M O S FE T s • IRFP150, IRFP151, IRFP152, IRFP153 File Number Power MOS Field-Effect Transistore N-Channel Enhancement-Mode Power Field-Effect Transistors 34 A and 40 A, 60 V - 100 V rDsioni = 0.055 Q and 0.08 fi N-CHANNEL ENHANCEMENT MODE
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OCR Scan
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IRFP150,
IRFP151,
IRFP152,
IRFP153
IRFP153are
bFP151,
mosfet IRF 3306
IRFPI50
IRPF
IRFP151
ocr31
transistor irfp
100-C
IRFP150
IRFP152
IRFP153
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PDF
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irfp150
Abstract: mosfet ir 250p
Text: International ioR Rectifier HEXFET Power MOSFET “ l,8SS,S5 0D1SMtb D3T PD-9.441D IIN R IRFP150 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling
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OCR Scan
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IRFP150
O-247
T0-220
4fl5545E
irfp150
mosfet ir 250p
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PDF
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IRFP150
Abstract: ir 740p 740p 441D irfp150 ir
Text: P D -9 .4 4 1 D International Ii^r Rectifier IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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OCR Scan
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IRFP150
O-247
T0-220
O-218
IRFP150
ir 740p
740p
441D
irfp150 ir
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PDF
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ssh17n55
Abstract: IRFP141 SSH40N20 SSH22N45 irfp250
Text: MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL Part Number IRFP141 IRFP151 BV d s s V lD(on)(A) Ros(on)(fl) R0jc(K/W) PD(Watt) Page 80 28.00 0.077 582 0.055 0.030 0.83 0.65 150 40.00 60.00 190 230 280 592 597 SSH60N08 SSH70N08 IHFP140 IRFP150 SSH60N10 SSH70N10 100
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OCR Scan
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IRFP141
IRFP151
SSH60N08
SSH70N08
IHFP140
IRFP150
SSH60N10
SSH70N10
IRFP241
IRFP251
ssh17n55
SSH40N20
SSH22N45
irfp250
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PDF
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transistor irfp 150
Abstract: IRFP 150 transistor irfp IRFP P CHANNEL IRFP IRFP150 3421A transistor irfp IRFP-150
Text: Æ 7 SGS-THOMSON ^ 7 £ . M ^G J M M <§§ IRFP 150/FI-151/FI IRFP 152/FI-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI V DSS ^D S (o r 'd ' 100 100 60 60 100 100
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OCR Scan
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150/FI-151/FI
152/FI-153/FI
IRFP150
IRFP150FI
IRFP151
IRFP151FI
IRFP152
IRFP152FI
IRFP153
IRFP153FI
transistor irfp 150
IRFP 150
transistor irfp
IRFP P CHANNEL
IRFP
3421A
transistor irfp IRFP-150
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PDF
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