Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IRFP 360 VDSS = 400 V ID25 = 23 A RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient
|
Original
|
PDF
|
ID100
|
IRFP 640
Abstract: IRFP254
Text: IRFP 254 Standard Power MOSFET VDSS = 250 V ID cont = 23 A RDS(on) = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient
|
Original
|
PDF
|
O-247
IRFP 640
IRFP254
|
Untitled
Abstract: No abstract text available
Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
PDF
|
125OC
100ms
Figure10.
|
IRFP 640
Abstract: IRFP P CHANNEL IRFP P CHANNEL MOSFET IRFP 460 datasheet transistor irfp irfp 460 IRFP 125OC 23/IRFP 460
Text: MegaMOSTM Power MOSFET IRFP 460 VDSS ID cont RDS(on) = 500 V = 20 A Ω = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous
|
Original
|
PDF
|
O-247
125OC
100ms
Figure10.
IRFP 640
IRFP P CHANNEL
IRFP P CHANNEL MOSFET
IRFP 460 datasheet
transistor irfp
irfp 460
IRFP
125OC
23/IRFP 460
|
IRFP 640
Abstract: No abstract text available
Text: Standard Power MOSFET IRFP 260 VDSS = 200 V ID cont = 46 A RDS(on) = 55 mW N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient
|
Original
|
PDF
|
O-247
IRFP 640
|
MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
|
Original
|
PDF
|
O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
|
IRFP 640
Abstract: ID100 irfp 360
Text: MegaMOSTMFET IRFP 360 VDSS = 400 V = 23 A ID25 RDS on = 0.20 Ω N-Channel Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ 400 400 V V VGS VGSM Continuous Transient
|
Original
|
PDF
|
ID100
IRFP 640
ID100
irfp 360
|
IRFP 640
Abstract: IRFP P CHANNEL IRFP
Text: IRFP 250 Standard Power MOSFET VDSS = 200 V ID cont = 30 A Ω RDS(on) = 85 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient
|
Original
|
PDF
|
|
IRFP 640
Abstract: IRFP264 IRFP P CHANNEL
Text: IRFP 264 Standard Power MOSFET VDSS = 250 V ID cont = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient
|
Original
|
PDF
|
O-247
IRFP 640
IRFP264
IRFP P CHANNEL
|
IRFP 450 application
Abstract: GD15-0 IRFP 640 20NC50 IRFP P CHANNEL transistor irfp IRFP 450
Text: IRFP 450 Standard Power MOSFET VDSS = 500 V ID cont = 14 A RDS(on) = 0.40 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
|
Original
|
PDF
|
|
IRFP 640
Abstract: IRFP P CHANNEL IRFP 450 application
Text: MegaMOSTMFET IRFP 470 VDSS = 500 V ID cont = 24 A RDS(on) = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30
|
Original
|
PDF
|
|
IRFP 640
Abstract: No abstract text available
Text: MegaMOSTMFET IRFP 470 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 24 A I DM TC = 25°C, pulse width limited by TJM
|
Original
|
PDF
|
O-247
IRFP 640
|
Untitled
Abstract: No abstract text available
Text: iPIXYS MegaMOS FET IRFP 360 VDSS = 400 V = 23 A = 0.20 ß ^D25 R DS on N-Channel Enhancement Mode ?D G Preliminary data ¿s Maximum Ratings Symbol Test Conditions V Tj = 25°C to 150°C T j = 25°C to 1S0°C; Ros= 1.0 M£2 400 400 V V Continuous T ransient
|
OCR Scan
|
PDF
|
O-247
C2-29
|
9D140
Abstract: No abstract text available
Text: IRFP 250 VDSS = 200 V ^D cont = 30 A Standard Power MOSFET R DS,on) = 85 m Q N-Channel Enhancement Mode Symbol Test Conditions V ¥ dss T j =25°C to150°C 200 V v T j = 25°Cto150°C; RGS= 1 Mi2 200 V < (/> >8 Continuous ¿20 V v Transient 130 V T c =25°C
|
OCR Scan
|
PDF
|
to150
Cto150
O-247
9D140
|
|
|
Untitled
Abstract: No abstract text available
Text: inixYS MegaMOS FET IRFP 470 V DSS I D cont D DS(on) 500 V 24 A 0.23 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V OSS Tj =25°Cto150°C 500 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2 500 V Vos Continuous ±20 V v GSM Transient
|
OCR Scan
|
PDF
|
Cto150
O-247AD
|
Untitled
Abstract: No abstract text available
Text: nixYS_ Standard Power MOSFET IRFP 254 VDSS = 250 V ^D cont = 23 A ^D S (o n) = ^ N-Channel Enhancement Mode ?D 8 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°Cto150°C 250 V V DGR Tj = 25° C to 150° C; RGS= 1 MC2 250 V Vos Continuous
|
OCR Scan
|
PDF
|
Cto150
O-247
|
IRFP 640
Abstract: mosfet irfp 250 N
Text: IXYS Standard Power MOSFET IRFP 450 VDSS ID cont P DS(on) 500 V 14 A 0.40 f t N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj =25°Cto150°C 500 V vDGR ^ 500 V Vos v GSM Continuous ±20 V Transient ±30 V ^D25 Tc =25°C 14 A Tc = 25° C, pulse width limited by TJM
|
OCR Scan
|
PDF
|
Cto150
O-247
00A/ns,
pro45
IRFP 640
mosfet irfp 250 N
|
irfp 250m
Abstract: No abstract text available
Text: IDIXYS IRFP 360 VDSS MegaMOSraF E T I D25 R DS on 400 V 23 A 0.20 ft N-Channel Enhancement Mode Preliminary data Symbol Test Conditions V Tj = 25°C to 150°C T,J = 25°C to 150°C; RrU b„ = 1.0 M£2 400 400 V V Continuous Transient ±20 ±30 V V Tc = 25°C
|
OCR Scan
|
PDF
|
O-247AD
irfp 250m
|
IRFP 640
Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140
|
OCR Scan
|
PDF
|
135XTP
01N100
1N100
2N100
2N100
100X2
01N100X3
O-251,
O-220AB
IRFP 640
IRFP 260 M
6N80A
0 280 130 023
IRFP
24n50
5N10
IXTM20N60
6N90A
01N100
|
027Q
Abstract: No abstract text available
Text: DIXYS MegaMOS IRFP460 VDSS Power MOSFET D cont R DS(on) N-Channel Enhancement Mode, HDMOS™ Family Symbol Test Conditions V DSS T j =25°C to 150°C 500 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 500 V Vos Continuous 120 V V GSM Transient ±30 V ^025
|
OCR Scan
|
PDF
|
IRFP460
O-247
C2-32
C2-33
027Q
|
Untitled
Abstract: No abstract text available
Text: □ IXYS MegaMOS IRFP460 Power MOSFET V DSS = 500 V 20 A D cont D DS(on) N-Channel Enhancement Mode, HDM OS™ Family Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 M£i 500 V VGS V GSM Continuous
|
OCR Scan
|
PDF
|
IRFP460
O-247
|
Untitled
Abstract: No abstract text available
Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM
|
OCR Scan
|
PDF
|
IRFP450
O-247
|
Untitled
Abstract: No abstract text available
Text: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V
|
OCR Scan
|
PDF
|
IRFP254
Q003flc
|
Untitled
Abstract: No abstract text available
Text: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient
|
OCR Scan
|
PDF
|
IRFP250
O-247
|
