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Infineon Technologies AG IRFH7911TR2PBF MOSFET 2N-CH 30V 13A/28A PQFN
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IRFH7911TR2PBF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFH7911TR2PBF		International Rectifier	FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH DUAL 30V 5X6 PQFN		Original	PDF

IRFH7911TR2PBF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRFH7911 Abstract: IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint Text: PD - 97427A IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits	Original	7427A IRFH7911PbF IRFH7911 IRFH7911TRPBF W5337 AN1152 FET MARKING CODE FET MARKING QG marking JE FET PQFN footprint	PDF
IRFH7911TRPBF Abstract: No abstract text available Text: PD - 97427B IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits	Original	97427B IRFH7911PbF IRFH7911TRPBF	PDF
Untitled Abstract: No abstract text available Text: IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters	Original	IRFH7911PbF AN-1152 AN-1136	PDF
IRFH7911TRPBF Abstract: No abstract text available Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' 1& * 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters	Original	97427D IRFH7911PbF IRFH7911TRPBF IRFH7911TR2PBF x5/2011 AN-1152 AN-1136	PDF
Untitled Abstract: No abstract text available Text: PD - 97427 IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m: 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits Benefits	Original	IRFH7911PbF	PDF
AN1152 Abstract: No abstract text available Text: PD - 97427C IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m 8.3 34 nC 13 28 A (@VGS = 10V) Qg (typical) ID (@TA = 25°C) : Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters Features and Benefits	Original	97427C IRFH7911PbF IRFH7911TRPBF IRFH7911TR2PBF PQ5/2011 AN-1152 AN-1136 AN1152	PDF
Untitled Abstract: No abstract text available Text: PD - 97427D IRFH7911PbF HEXFET Power MOSFET VDS Q1 30 Q2 30 V RDS on max 8.6 3.0 m (@VGS = 10V) Qg (typical) ID (@TA = 25°C) Ã : 8.3 34 nC 13 28 A Ã ' * 6' * 1& 6 Dual PQFN 5X6 mm Applications • Control and synchronous MOSFET for buck converters	Original	97427D IRFH7911PbF AN-1152 AN-1136	PDF