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    IRFD9120 MOSFET Search Results

    IRFD9120 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRFD9120 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFD9120

    Abstract: IRFD9120PBF MOSFET IRFd9120
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 18-Jul-08 IRFD9120 IRFD9120PBF MOSFET IRFd9120

    IRFD9120

    Abstract: irfd9120pbf
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 11-Mar-11 IRFD9120 irfd9120pbf

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MOSFET IRFd9120

    Abstract: IRFD9120 IRFD9120 mosfet
    Text: IRFD9120 Data Sheet July 1999 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 2285.3 Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFD9120 MOSFET IRFd9120 IRFD9120 IRFD9120 mosfet

    IRFD9120

    Abstract: MOSFET IRFd9120
    Text: IRFD9120 Data Sheet January 2002 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFD9120 TA17501. IRFD9120 MOSFET IRFd9120

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120 Data Sheet Title FD 20 bt A, 0V, 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		PDF IRFD9120 TA17501. IRFD9120

    IRFD9120

    Abstract: IRFD9120PBF vishay marking irfd9120 SiHFD9120
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 18-Jul-08 IRFD9120 IRFD9120PBF vishay marking irfd9120

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFD9120

    irfd9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 18-Jul-08 irfd9120

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 12-Mar-07

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 2002/95/EC 11-Mar-11 IRFD9120

    irfd9120

    Abstract: SiHFD9120
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		PDF IRFD9120, SiHFD9120 18-Jul-08 irfd9120

    IRFD9120

    Abstract: FD9120 MOSFET IRFd9120 ON950 IF-D91
    Text: T em ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary Part Number V BR I)SS (V) n>S(on| (ß> IRFD9120 -100 0.60 -1 .0 IRFD9123 -6 0 0.80 -0 .8 vi I d (A) S p 4-Pin DIP D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF irfd9120/9123 IRFD9120 IRFD9123 IBFD9120 1RFIW123 IFD912( FD912: P-36852â 25M735 Glfl23a FD9120 MOSFET IRFd9120 ON950 IF-D91

    IRFD9120

    Abstract: No abstract text available
    Text: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =


    OCR Scan     		PDF

    IRFD9120

    Abstract: No abstract text available
    Text: PD-9.3311 International S Rectifier IRFD9120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature Fast Switching VDSS= -100V R DS on =


    OCR Scan     		PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan     		PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240

    Untitled

    Abstract: No abstract text available
    Text: IRFD9120 Semiconductor April 1999 Data Sheet -1.0A, -100V, 0.6 Ohm, P-Channel Power MOSFET • -1.0A ,-100V • r DS ON = ° - 6 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    OCR Scan     		PDF IRFD9120 -100V, -100V TA17501. TB334

    marking B33 diode

    Abstract: MOSFET IRFd9120 IRFD9120
    Text: IINR 4ÔSSMS2 OOlSObH b33 International i«R Rectifier PD-9.3311 IRFD9120 HEXFET Power M O S F E T bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature


    OCR Scan     		PDF IRFD9120 l50Ktl marking B33 diode MOSFET IRFd9120 IRFD9120

    IRF09120

    Abstract: IRFD9120 RFD9120 IRFD9123 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123
    Text: h e o I MäSS4S2 cmaamfc, i | Data Sheet No. PD-9.331G INTERNATIONAL R E C T I F I E R T-37-25 INTERNATIONAL RECTIFIER HEXFET* TRANSISTORS IO R IRFD9120 IRFD91S3 P-CHANNEL HEXDIP" 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL IN-LINE PACKAGE -100 VOLT, 0.6 Ohm, 1-Watt HEXDIP


    OCR Scan     		PDF T-37-25 IRFD9120 IRFD91S3 C-169 IRFD9120, IRFD9123 C-170 IRF09120 RFD9120 IRFD9120 N CHANNEL fd9120 MOSFET IRFd9120 Power MOSFET in a HEXDIP package IRFD 9120 tc 9123

    irfd9123

    Abstract: tc 9123 IRFD 123
    Text: m IR F D 9 1 2 0 IR F D 9 1 2 3 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E TOP VIEW • -1.0 A and -0.8A , -8 0 V and -100V • rDS ON = 0-6H and 0 .8 ri • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF -100V IRFD9120 IRFD9123 tc 9123 IRFD 123

    1rfd9120

    Abstract: No abstract text available
    Text: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI


    OCR Scan     		PDF IRFD9120 IRFD9123 JRFD9120, 1rfd9120

    IRFD620

    Abstract: IRFD420 IRFD9220 h10 npn
    Text: International lo i Rectifier HEXFET Power MOSFETs HEXDips Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. Part Number IRF0C10LC V BR d s s Drain-to-Source ROS(on) lg Continuous On-State Drain Current


    OCR Scan     		PDF IRF0C10LC IRFD014 IRFD024 IRFD110 IRFD120 IRFD210 IRFD220 IRFD214 IRFD224 IRFD310 IRFD620 IRFD420 IRFD9220 h10 npn

    IRF0110

    Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
    Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123


    OCR Scan     		PDF IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310