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    IRFC3815B

    Abstract: IRFC3815
    Text: PD - 95827 IRFC3815B D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-274 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description


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    PDF IRFC3815B O-274 100nA IRFC3815B IRFC3815