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    IRF9540 MOSFET Search Results

    IRF9540 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF9540 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf9540

    Abstract: IRF9540 application IRF9541 IRF9542 data sheet IRF9540 IRF9540 mosfet irf9543 RF1S9540 RF1S9540SM
    Text: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM S E M I C O N D U C T O R -15A and -19A, -80V and -100V, 0.20Ω and 0.30Ω, P-Channel Power MOSFETs January 1997 Features Description • -15A and -19A, -80V and -100V • High Input Impedance The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and


    Original     		PDF IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -100V, -100V irf9540 IRF9540 application IRF9541 IRF9542 data sheet IRF9540 IRF9540 mosfet irf9543 RF1S9540 RF1S9540SM

    IRF9540 mosfet

    Abstract: IRF9540 application data sheet IRF9540 irf9540 IRF9540 led driver TA17521 RF1S9540SM9A TB334 RF1S9540 RF1S9540SM
    Text: IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of


    Original     		PDF IRF9540, RF1S9540SM TA17521. 100opment. IRF9540 mosfet IRF9540 application data sheet IRF9540 irf9540 IRF9540 led driver TA17521 RF1S9540SM9A TB334 RF1S9540 RF1S9540SM

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF9540

    Abstract: IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM
    Text: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM Semiconductor -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and -19A, -80V and -100V These are P-Channel enhancement mode silicon gate


    Original     		PDF IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -100V, -100V IRF9540 IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM

    IRF9540 application

    Abstract: data sheet IRF9540 IRF9540 SiHF9540 SiHF9540-E3
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 61 Qgs (nC) 14 Qgd (nC) 29 Configuration • Repetitive Avalanche Rated 0.20 Available RoHS* • P-Channel


    Original     		PDF IRF9540, SiHF9540 O-220 O-220 18-Jul-08 IRF9540 application data sheet IRF9540 IRF9540 SiHF9540-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    IRF9540 application

    Abstract: No abstract text available
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9540 application

    IRF9540

    Abstract: IRF954
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF9540 IRF954

    IRF9540

    Abstract: SiHF9540 SiHF9540-E3 IRF9540 application IRF9540 mosfet
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 14 Qgd (nC) 29 Configuration RoHS* • P-Channel 61 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRF9540, SiHF9540 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF9540 SiHF9540-E3 IRF9540 application IRF9540 mosfet

    IRF9540 application

    Abstract: IRF9540 mosfet data sheet IRF9540 IRF9540 RF1S9540 RF1S9540SM RF1S9540SM9A TA17521 TB334
    Text: IRF9540, RF1S9540SM Data Sheet 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRF9540, RF1S9540SM TA17521. IRF9540 application IRF9540 mosfet data sheet IRF9540 IRF9540 RF1S9540 RF1S9540SM RF1S9540SM9A TA17521 TB334

    IRF9540 application

    Abstract: IRF9540 SiHF9540 data sheet IRF9540 IRF9540PBF SiHF9540-E3 IRF9540 MOSFET
    Text: IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 61 Qgs (nC) 14 Qgd (nC) 29 Configuration • Repetitive Avalanche Rated 0.20 Available RoHS* • P-Channel


    Original     		PDF IRF9540, SiHF9540 O-220 O-220 18-Jul-08 IRF9540 application IRF9540 data sheet IRF9540 IRF9540PBF SiHF9540-E3 IRF9540 MOSFET

    IRF9540 application

    Abstract: IRF9540 mosfet TA17521 data sheet IRF9540 irf9540 RF1S9540 RF1S9540SM RF1S9540SM9A TB334
    Text: IRF9540, RF1S9540SM Data Sheet Title F95 1S9 0SM bt A, 0V, 00 m, 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs Features These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified


    Original     		PDF IRF9540, RF1S9540SM TA17521. TB334 IRF9540 O-220AB O-263AB IRF9540 application IRF9540 mosfet TA17521 data sheet IRF9540 irf9540 RF1S9540 RF1S9540SM RF1S9540SM9A TB334

    IRF9610

    Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
    Text: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540


    OCR Scan     		PDF O-220 IRF9512 TQ-220AB IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540 IRF9610 IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE

    Untitled

    Abstract: No abstract text available
    Text: IRF9540, RF1S9540SM S e m iconductor Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRF9540, RF1S9540SM -100V, -100V

    irf9540

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS IRF9540/9541 FEATURES • L o w e r R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF9540/9541 IRF9540 -100V IRF9541 7Tb4142

    1RF9540

    Abstract: IRF9540 application smd diode marking 78A IRF9540 rasistor 12v CFL DIODE marking ED 78A ScansUX102 IRF9540 mosfet
    Text: PD-9.421C International E?R R ectifier IRF9540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ d s s ~ -1 0 0 V


    OCR Scan     		PDF IRF9540 O-220 -100V 0-20O 1RF9540 IRF9540 application smd diode marking 78A rasistor 12v CFL DIODE marking ED 78A ScansUX102 IRF9540 mosfet

    IRF9540

    Abstract: IRF9541 IRF9540 MOSFET
    Text: P-CHANNEL POWER MOSFETS IRF9540/9541 FEATURES • L o w e r R d s <o n • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRF9540/9541 O-220 IRF9540 -100V IRF9541 IRF9540 MOSFET

    IRF9540

    Abstract: No abstract text available
    Text: *f*32S IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and-19A ,-80V and-100V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -100V, and-19A and-100V IRF9540

    1RF9540

    Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
    Text: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY


    OCR Scan     		PDF D0GS40Ö IRF9140/ IRFP9140/9141 IRF9540/ 9541Z IRF/IRFP9140, IRF9540 IRF/IRFP9141, IRF9541 IRF/IRFP9142, 1RF9540 l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220

    1RF9540

    Abstract: c346 diode IRF9540 complementary c343 diode IRF3542 IRF9S40 IRF9540 irf354 diode c345 f*9540
    Text: HE 0 I 4flSS452 QQDââ^M 3 | Data Sheet No. PD-9.421A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRF9540 IRF9541 P-CHANNEL 1GOVOLT POWER MOSFETs IRF3542 IRFS543 -1 0 0 Volt, 0.2 Ohm HEXFET TO-220AB Plastic Package Product Summary


    OCR Scan     		PDF 4flSS452 IRF9540 IRF9541 IRF3542 IRFS543 O-220AB C-347 4SS5452 IRF9540, IRF9541, 1RF9540 c346 diode IRF9540 complementary c343 diode IRF9S40 irf354 diode c345 f*9540

    DIODE marking 7BA

    Abstract: IRF9540 IRF9540 mosfet IRF9540 application RD24A
    Text: International S Rectifier PD-9.421C IRF9540 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s - -1 0 0 V ^DS on = 0 . 2 0 0 lD = -1 9 A


    OCR Scan     		PDF IRF9540 O-220 -100V DIODE marking 7BA IRF9540 IRF9540 mosfet IRF9540 application RD24A