irf740
Abstract: power MOSFET IRF740 irf740 mosfet irf740 application IRF740 400V 10A
Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances
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IRF740
O-220
O-220
IRF740
IRF740@
power MOSFET IRF740
irf740 mosfet
irf740 application
IRF740 400V 10A
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IRF7405
Abstract: irf740 irf740 mosfet power MOSFET IRF740 IRF740 application TO-220 DATASHEET IRF740 transistor equivalent irf740 JESD97
Text: IRF740 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF740 400V <0.55Ω 10A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge ■ Very low intrinsic capacitances
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IRF740
O-220
IRF7405
irf740
irf740 mosfet
power MOSFET IRF740
IRF740 application
TO-220
DATASHEET IRF740
transistor equivalent irf740
JESD97
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IRF740
Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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IRF740
IRF740FI
100oC
O-220
ISOWATT220
IRF740
IRF740FI
transistor equivalent irf740
irf740 DATA SHEET
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IRF740
Abstract: irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
Text: IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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IRF740
O-220
IRF740
irf740 mosfet
irf740n
power MOSFET IRF740
transistor equivalent irf740
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irf740
Abstract: irf740 mosfet 53A2
Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES
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PDF
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IRF740
O-220
irf740
irf740 mosfet
53A2
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IRF740
Abstract: No abstract text available
Text: IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE IRF740 • ■ ■ ■ ■ VDSS RDS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY LOW INTRINSIC CAPACITANCES
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O-220
IRF740
IRF740
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IRF740
Abstract: IRF740FI
Text: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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Original
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PDF
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IRF740
IRF740FI
100oC
O-220
ISOWATT220
IRF740
IRF740FI
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IRF740
Abstract: irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740
Text: IRF740 N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220 PowerMESH MOSFET TYPE IRF740 • ■ ■ ■ ■ V DSS R DS on ID 400 V < 0.55 Ω 10 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
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IRF740
O-220
O-220
IRF740
irf740n
power MOSFET IRF740
irf740 mosfet
MOSFET IRF740
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MOSFET IRF740 as switch
Abstract: IRF740 irf740 mosfet power MOSFET IRF740 transistor equivalent irf740
Text: DC COMPONENTS CO., LTD. IRF740 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 400 Volts RDS on = 0.55 Ohm ID = 10 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements
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IRF740
O-220AB
MOSFET IRF740 as switch
IRF740
irf740 mosfet
power MOSFET IRF740
transistor equivalent irf740
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irf740 mosfet
Abstract: power MOSFET IRF740 IRF740 transistor equivalent irf740 CIRF740
Text: IRF740 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this
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IRF740
irf740 mosfet
power MOSFET IRF740
IRF740
transistor equivalent irf740
CIRF740
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Untitled
Abstract: No abstract text available
Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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IRF740,
SiHF740
2002/95/EC
O-220AB
11-Mar-11
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IRF740
Abstract: No abstract text available
Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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PDF
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IRF740,
SiHF740
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF740
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IRF740PBF
Abstract: IRF740 irf740 mosfet SiHF740 SiHF740-E3
Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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IRF740,
SiHF740
O-220
O-220
18-Jul-08
IRF740PBF
IRF740
irf740 mosfet
SiHF740-E3
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SEC IRF740
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRF740 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRF740
O-220
SEC IRF740
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power MOSFET IRF740 driver circuit
Abstract: IRF740 irf740 mosfet IRF740PBF SiHF740 SiHF740-E3
Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF740,
SiHF740
O-220
O-220
18-Jul-08
power MOSFET IRF740 driver circuit
IRF740
irf740 mosfet
IRF740PBF
SiHF740-E3
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power MOSFET IRF740 driver circuit
Abstract: No abstract text available
Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF740,
SiHF740
O-220
O-220
12-Mar-07
power MOSFET IRF740 driver circuit
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Untitled
Abstract: No abstract text available
Text: IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration
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Original
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PDF
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IRF740,
SiHF740
2002/95/EC
O-220AB
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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power MOSFET IRF740
Abstract: No abstract text available
Text: IRF740 Data Sheet Title F74 bt A, 0V, 50 m, an- 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF740
TA17424
IRF740
power MOSFET IRF740
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mosfet 1RF740
Abstract: 1rf740 IRF740 IRF741 irf740 mosfet IRF742 power MOSFET IRF740 IRF743
Text: -— - Standard Power MOSFETs File Number 2311 IRF740, IRF741, IRF742, IRF743 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors
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IRF740,
IRF741,
IRF742,
IRF743
IRF743
IRF74
75BVdss
mosfet 1RF740
1rf740
IRF740
IRF741
irf740 mosfet
IRF742
power MOSFET IRF740
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LG diode 831
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF740 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
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IRF740
LG diode 831
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Untitled
Abstract: No abstract text available
Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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OCR Scan
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PDF
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IRF740
O-220AB
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Untitled
Abstract: No abstract text available
Text: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:
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OCR Scan
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180x220
20x16
IRF740
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gate drive circuit for power MOSFET IRF740
Abstract: irf740 irf741 irf740 mosfet IRF740D IRF743 irf740 STAND FOR IRF740 ir
Text: IRF740, IRF741, IRF742, IRF743 h a r r is SEMIC0NDUCT0R 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 8A and 10A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF740,
IRF741,
IRF742,
IRF743
TA17424.
gate drive circuit for power MOSFET IRF740
irf740
irf741
irf740 mosfet
IRF740D
IRF743
irf740 STAND FOR
IRF740 ir
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irf740 spice model
Abstract: IRF740
Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package
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OCR Scan
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PDF
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SS452
IRF740
IRF74Ã
IRF742
IRF743
T0-220AB
IRF741
C-299
irf740 spice model
IRF740
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