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    IRF730B Search Results

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    IRF730B Price and Stock

    Vishay Siliconix IRF730BPBF

    MOSFET N-CH 400V 6A TO220AB
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    DigiKey IRF730BPBF Tube 949 1
    • 1 $1.18
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    • 100 $0.502
    • 1000 $0.41
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    RS IRF730BPBF Bulk 1,000
    • 1 -
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    • 1000 $1.1
    • 10000 $1.05
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    Rochester Electronics LLC IRF730B

    N-CHANNEL POWER MOSFET
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    DigiKey IRF730B Bulk 952
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    onsemi IRF730B

    MOSFET 400V N-Channel B-FET - Bulk (Alt: IRF730B)
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    Avnet Americas IRF730B Bulk 4 Weeks 1,145
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    Vishay Intertechnologies IRF730BPBF

    N-CHANNEL 400V - Tape and Reel (Alt: IRF730BPBF)
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    Avnet Americas IRF730BPBF Reel 1,000
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    IRF730BPBF Reel 12 Weeks 1,000
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    TTI IRF730BPBF Tube 1,000
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    • 1000 $0.447
    • 10000 $0.41
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    TME IRF730BPBF 1
    • 1 $0.879
    • 10 $0.791
    • 100 $0.699
    • 1000 $0.586
    • 10000 $0.586
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    Fairchild Semiconductor Corporation IRF730B

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    Bristol Electronics IRF730B 300
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    Quest Components IRF730B 2,127
    • 1 $0.609
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    • 1000 $0.2538
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    IRF730B 240
    • 1 $1.015
    • 10 $1.015
    • 100 $0.5075
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    Rochester Electronics IRF730B 9,000 1
    • 1 $0.3185
    • 10 $0.3185
    • 100 $0.2994
    • 1000 $0.2707
    • 10000 $0.2707
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    IRF730B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF730B Fairchild Semiconductor 400V N-Channel MOSFET Original PDF
    IRF730B Fairchild Semiconductor 400V N-Channel MOSFET Original PDF
    IRF730BPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220AB Original PDF

    IRF730B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    PDF IRF730B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    PDF IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF730B

    Abstract: No abstract text available
    Text: IRF730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    PDF IRF730B O-22ner IRF730B

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    PDF IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF730B

    Abstract: IRFS730B
    Text: IRF730B/IRFS730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    PDF IRF730B/IRFS730B O-220ner IRF730B IRFS730B

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    PDF IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF730B/IRFS730B 400V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 5.5A, 400V, RDS on = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description


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    PDF IRF730B/IRFS730B O-220 O-220F 54TYP 00x45Â

    Untitled

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    PDF IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF730BPBF

    Abstract: No abstract text available
    Text: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    PDF IRF730B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF730BPBF

    Untitled

    Abstract: No abstract text available
    Text: IRF730B_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in PSpice,


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    PDF AN609, 3798m 8709m 0862m 3827m 26-May-15

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


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    PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    IRF470

    Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
    Text: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0


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    PDF IRF331 O-204AA/TO-3 IRF332 2N6012 O-247 IRFP352R IRFP353R IRF470 IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


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    PDF O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


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    PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


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    PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08