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    IRF7105 MOSFET Search Results

    IRF7105 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    IRF7105 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf7105 mosfet

    Abstract: IRF7105 DIODE irf 7487 IRf 48 MOSFET transistor irf 649 MS-012AA IRF7105N 12V P-Channel Power MOSFET
    Text: PD - 91097E IRF7105 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N-CHANNEL MOSFET 1 8


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    PDF 91097E IRF7105 EIA-481 EIA-541. irf7105 mosfet IRF7105 DIODE irf 7487 IRf 48 MOSFET transistor irf 649 MS-012AA IRF7105N 12V P-Channel Power MOSFET

    F7101

    Abstract: IRF7105 IRF7105N Dual N P-Channel HEXFET SO-8 P Channel Low Gate Charge P Channel Low Gate Charge 100A MS-012AA
    Text: PD - 9.1097C IRF7105 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N-C HANNE L M O S F E T


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    PDF 1097C IRF7105 F7101 IRF7105 IRF7105N Dual N P-Channel HEXFET SO-8 P Channel Low Gate Charge P Channel Low Gate Charge 100A MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: IRF7105 Transistors Complementary Pair of MOSFETs V BR DSS (V)25 V(BR)GSS (V)20 I(D) Max. (A)2.3 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)70# IDM Max (@25øC Amb)10 Absolute Max. Power Diss. (W)2.0# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150


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    PDF IRF7105 Junc-Case62

    J127 mosfet

    Abstract: J132 MOSFET MOSFET J132 mosfet J137 J137 MOSFET D4126 512 j122 J118 MOSFET PC MOTHERBOARD FDB7030L LG LX
    Text: MAX1638VRM Evaluation Kit The MAX1638VRM evaluation kit EV kit provides a digitally programmable output voltage between 1.3V and 3.5V from a 5V input supply. It delivers up to 14A output current with greater than 90% efficiency. The MAX1638 features 1% output accuracy as well as 1% AC-load regulation. The EV kit operates at a 600kHz switching frequency and has excellent dynamic response to correct


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    PDF MAX1638VRM MAX1638 600kHz J127 mosfet J132 MOSFET MOSFET J132 mosfet J137 J137 MOSFET D4126 512 j122 J118 MOSFET PC MOTHERBOARD FDB7030L LG LX

    smd R549

    Abstract: PE68515 SMD1808-A1 R15 smd diode FM93C46LM8 smd diode r17 SMD diode U5 smd diode d9 DP83816 XFMR-PULSE-PE68515
    Text: 10/100 Mb/s Ethernet MacPHYTERII DP83816 Demo Board Amber Revised: Wednesday, July 31, 2002 870011508-300 Revision: 1.2a National Semiconductor - Wired Communications Group Bill Of Materials July 31,2002 Item Quantity Reference Part Footprint Part Description


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    PDF DP83816 DA108S1 10BQ015 IRF7105 C75R0C000C0603TKF000B R-10K SMD1206-A1 SMD0603-A1 SMD1210-A1 smd R549 PE68515 SMD1808-A1 R15 smd diode FM93C46LM8 smd diode r17 SMD diode U5 smd diode d9 XFMR-PULSE-PE68515

    DIODE SMD footprint

    Abstract: C3240 RJ45 connector 1x2 SMD smd led 3528 SMD DIODE 3126 CON-RJ45-GIG P516CT-ND C82 diode smd 3528 SMD1808-A1
    Text: 10/100/1000 Mb/s Ethernet GigPHYTER DP83865 Demo Board Cetus Revised: Sep 4, 2001 980011617-100 X3 Revision 2.2 National Semiconductor - PC & Networking Group Bill of Materials Sep 4, 2001 Item Quantity Reference Part Footprint Part Description Part Number


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    PDF DP83865 SMD0603-A1 C1040C000J0603CER050V SMD3528-B1 1/16W, C1541C000B0603TKF000B C1060C000G3528TAN016V 001UF DIODE SMD footprint C3240 RJ45 connector 1x2 SMD smd led 3528 SMD DIODE 3126 CON-RJ45-GIG P516CT-ND C82 diode smd 3528 SMD1808-A1

    J127 mosfet

    Abstract: MOSFET J132 mosfet J137 J132 MOSFET PC MOTHERBOARD FDB7030L 512 j122 IRF7105 max1638 10SA220M 4SP220M
    Text: MAX1638VRM Evaluation Kit The MAX1638VRM evaluation kit EV kit provides a digitally programmable output voltage between 1.3V and 3.5V from a 5V input supply. It delivers up to 14A output current with greater than 90% efficiency. The MAX1638 features 1% output accuracy as well as 1% AC-load regulation. The EV kit operates at a 600kHz switching frequency and has excellent dynamic response to correct


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    PDF MAX1638VRM MAX1638 600kHz J127 mosfet MOSFET J132 mosfet J137 J132 MOSFET PC MOTHERBOARD FDB7030L 512 j122 IRF7105 max1638 10SA220M 4SP220M

    irf7309

    Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
    Text: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S


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    PDF OT-223 IRF3710S IRF7324 IRF1310NS IRF731450 1N4049 300U80A† 150L10A† DO-30 irf7309 IRF7507TR IRF7342 IRF7210 IRLML2803TR IRF964

    BJT 2N2222 datasheet

    Abstract: lmv324n LMV741 bjt 2n2222 IRF7105N HMC1001 HMC2003 circuits using BJT 2N2222 HMC100X HMC102x
    Text: 1- and 2-Axis Magnetic Sensors HMC1001/1002/1021/1022 The Honeywell HMC100x and HMC102x magnetic sensors are one and two-axis surface mount sensors designed for low field magnetic sensing. By adding supporting signal processing, cost effective magnetometers or compassing


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    PDF HMC1001/1002/1021/1022 HMC100x HMC102x HMC100x HMC102x BJT 2N2222 datasheet lmv324n LMV741 bjt 2n2222 IRF7105N HMC1001 HMC2003 circuits using BJT 2N2222

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    824 mosfet

    Abstract: n-channel mosfet vgs 3v P-Channel MOSFET 600v IRF7205 IRF7307 P-channel irf7204 IRLML2402 IRLML5103 IRLMS1503
    Text: International Rectifier DESIGN TIPS DT 97-2J ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL(310) )322-3331・ ・FAX(310) )322-3332 INTERNATIONAL RECTIFIER・ 小型パワー M O S F E T H E X F E T の E S D 耐量


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    PDF 97-2J MIL-STD-750C IRF7503 IRF7603 IRF7509RF7503 IRF7506 RF7507IRF7501 IRF7504 824 mosfet n-channel mosfet vgs 3v P-Channel MOSFET 600v IRF7205 IRF7307 P-channel irf7204 IRLML2402 IRLML5103 IRLMS1503

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    9137

    Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
    Text: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.


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    PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRFK3DC50 IRFK3F150 O-240AA IRFK3F250 IRFK3F350 9137 surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250

    IRFBE30 equivalent

    Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
    Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


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    PDF May-97 Sep-95 Sep-94 IRFBE30 equivalent irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540

    IRF734

    Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
    Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566


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    PDF FA38SA50LC OT-227 FA57SA50LC FB180SA10 IRC530 O-220 IRC540 IRF734 irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34

    FDS4953

    Abstract: LX1711CDB LX1710 LX1711 LX1720 LXE1710
    Text: LXE1710 EVALUATION BOARD USER GUIDE         A Copyright  2000 Rev. 1.1, 2000-12-01  M I C R O S E M I C O M P A N Y Microsemi Linfinity Microelectronics Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


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    PDF LXE1710 LX1710/1711 LX1720 imAJA475M016R ECQ-V1H104JL ECQ-V1H474JL ECQ-V1H684JL FDS4953 LX1711CDB LX1710 LX1711

    MAX1638

    Abstract: MAX1638EAG MAX1638EEG
    Text: 19-1313; Rev 0; 11/97 KIT ATION EVALU E L B AVAILA High-Speed Step-Down Controller with Synchronous Rectification for CPU Power _Features The MAX1638 is an ultra-high-performance, step-down DC-DC controller for CPU power in high-end computer


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    PDF MAX1638 MAX1638 MAX1638EAG MAX1638EEG

    Untitled

    Abstract: No abstract text available
    Text: International Rectifier PD 9.1097A IRF7105 preliminary HEXFET® Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching


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    PDF IRF7105 Q02b4R7 111161X

    1RF7105

    Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
    Text: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !


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    PDF 1097B IRF7105 1RF7105 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a

    IRF7309

    Abstract: irf7105
    Text: HEXFET* Power MOSFETs International I ö R R ectifier As m ‘.'iSSAiîr *D •d V BR DSS Continuous R Drain-to-Source RDS(on) Continuous Drain Current Breakdown On-State Drain Current Max. Thermal Max. Power 70° Part Resistance Voltage 25°C Resistance 1 Dissipation 1


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    PDF IRF7307 IRF7105 IRF7309 OT-223

    irf7105

    Abstract: Dual N P-Channel irf7102
    Text: International lüRectifier HEXFET Power MOSFETs Surface Mount sn-8 The new SO-8 can accommodate a dual-die configuation, allowing multiple devices to be used in an application with greatly reduced board space. Power dissipation of more than 1W is possible in a typical printed circuit board application. The SO-8 is designed for all soldering techniques.


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    PDF IRF7104 IRF7105 IRF7106 IRF7107 Dual N P-Channel irf7102

    L9110

    Abstract: fl9110 IRF7103 L2803 IRFL110
    Text: I n t e r n a t i o n a l R e c t if ie r m a n Hffl HEXFET Power MOSFETS V BR 0SS Drain-to-Source Breakdown Voltage (Volts) Part Number RDS(on) On-State Resistance (Ohms) l[)Continuous Drain Current 25"C 70°C (Amps) (Amps) RtfvlA Max Thermal Resistance


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    PDF L5103 IRF7601 IRF7603 IRF7604* IRF7606 IRF7501* IRF7503 IRF7504* IRF7506 IRF7507* L9110 fl9110 IRF7103 L2803 IRFL110

    FL110

    Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
    Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case


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    PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc