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    International Rectifier IRF6602TR1

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    IRF6602TR1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF6602TR1 International Rectifier Original PDF

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    IRF6602

    Abstract: IRF6602TR1
    Text: PD-94363C IRF6602/IRF6602TR1 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS on max Qg 20V 13mΩ@VGS = 10V 19mΩ@VGS = 4.5V 12nC l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible


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    PDF PD-94363C IRF6602/IRF6602TR1 IRF6602 IRF6602TR1

    MQ 132

    Abstract: IRF6602 IRF6602TR1 mosfet 4800
    Text: PD - 94363C IRF6602/IRF6602TR1 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS on max Qg 20V 13mΩ@VGS = 10V 19mΩ@VGS = 4.5V 12nC l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm)


    Original
    PDF 94363C IRF6602/IRF6602TR1 IRF6602 MQ 132 IRF6602TR1 mosfet 4800

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    Abstract: No abstract text available
    Text: PD - 94363C IRF6602/IRF6602TR1 HEXFET Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS on max Qg 20V 13mΩ@VGS = 10V 19mΩ@VGS = 4.5V 12nC l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm)


    Original
    PDF 94363C IRF6602/IRF6602TR1 IRF6602