IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
|
Original
|
IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
|
PDF
|
AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
|
Original
|
PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
|
Original
|
PD-95474B
IRF5801PbF
AN1001)
10sec.
|
PDF
|
IRFTS9342TRPBF
Abstract: No abstract text available
Text: IRF5801PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 200 V 2.20 Ω 3.9 0.6 D 1 6 D nC D 2 5 D A G 3 4 S TSOP-6 Features Industry-standard pinout TSOP-6 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
|
Original
|
IRF5801PbF-1
IRF5801TRPbF-1
TD-020D
IRFTS9342TRPBF
|
PDF
|
AN1001
Abstract: No abstract text available
Text: PD-95474B IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
|
Original
|
PD-95474B
IRF5801PbF
AN1001)
10sec.
AN1001
|
PDF
|