IRFN5210
Abstract: No abstract text available
Text: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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Original
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PDF
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IRFN5210
-100V
300ms,
IRFN5210
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IRFN5210
Abstract: IRF5210SMD
Text: IRFN5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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Original
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PDF
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IRFN5210
-100V
300ms,
IRFN5210
IRF5210SMD
|
Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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PDF
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IRFN5210
-100V
-120A
780ms)
O-276AB)
IRF5210SMD
IRF5210SMD
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uc 5587
Abstract: IRFN5210 LE17
Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
|
Original
|
PDF
|
IRFN5210
-100V
-120A
780mJ
O-276AB)
IRF5210SMD
IRF5210SMD
uc 5587
IRFN5210
LE17
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