Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRF3415 CIRCUIT Search Results

    IRF3415 CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    IRF3415 CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF3415

    Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
    Text: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477D IRF3415 O-220 IRF3415 IRF3415 circuit IRF3415 equivalent 1810ms

    Untitled

    Abstract: No abstract text available
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 O-220AB

    IRF34

    Abstract: IRF3415 mosfet irf3415
    Text: FOR REVIEW ONLY IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF3415 O-220 O-220AB IRF34 IRF3415 mosfet irf3415

    AM 22A

    Abstract: 1477B IRF3415
    Text: Previous Datasheet Index Next Data Sheet PD 9.1477B IRF3415 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description


    Original     		PDF 1477B IRF3415 O-220 AM 22A 1477B IRF3415

    IRF3415

    Abstract: K 9008
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 poIRF3415 O-220AB IRF3415 K 9008

    Untitled

    Abstract: No abstract text available
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 O-220AB

    IRFZ44N complementary

    Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
    Text: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,


    Original     		PDF LC-00005 LC-00011 HUF75823D3 HUF75823D3S HUF75829D3 HUF75829D3S HUF75831SK8 HUF75842P3 HUF75842S3S HUF75852G3 IRFZ44N complementary IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent

    IRG41BC20W

    Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
    Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles


    Original     		PDF O-220 IR2130 230VAC IR2133 460VAC IR2233 IR2137/IR2171 IRG41BC20W IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor

    IRF3415S

    Abstract: AN-994 IRF3415 IRF3415L
    Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A


    Original     		PDF 91509C IRF3415S/L IRF3415S) IRF3415L) IRF3415S AN-994 IRF3415 IRF3415L

    AN-994

    Abstract: IRF3415 IRF3415S IRF530S st ld 33 22A17
    Text: Previous Datasheet Index Next Data Sheet PD- 9.1509A IRF3415S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 150V


    Original     		PDF IRF3415S AN-994 IRF3415 IRF3415S IRF530S st ld 33 22A17

    AN-994

    Abstract: IRF3415 IRF3415L IRF3415S
    Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A


    Original     		PDF 91509C IRF3415S/L IRF3415S) IRF3415L) AN-994 IRF3415 IRF3415L IRF3415S

    GA400GD25S

    Abstract: ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137
    Text: +200 / -460 mA 12.5 - 25V 12.5 - 25V with with UnderUnderVoltage Voltage Lockout Lockout UP TO 1200V — IR2233 / 2235 10 - 25V 10 - 25V with with +200 / -420 UVLO UVLO mA 12 - 25V 12 - 25V with with UVLO UVLO Output Swing = Supply Voltage Output Swing = Supply


    Original     		PDF IR2108 IRFBA1404P IRF1404S IRF1404 IRF1404L IRF1405S IRF1405 IRF1405L IRFP2907 IRFPS3810 GA400GD25S ir2184 circuit IR211X IRG4BC30KD-S IR2213 DIE 600V 20A 50KHz IR2136 GA250 IRFP3415 IR2137

    IRF5905

    Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
    Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES


    Original     		PDF O-220/D2PAK IRF5905 MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    b-bios

    Abstract: No abstract text available
    Text: PD 9.1477C International ICR Rectifier IRF3415 PRELIMINARY HEXFET^ Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS= 150V R DS on = Description Id = 0.042Í2


    OCR Scan     		PDF 1477C IRF3415 O-220 b-bios

    RF1010

    Abstract: diode body marking A 4
    Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V


    OCR Scan     		PDF IRF3415 O-220 RF1010 diode body marking A 4

    Untitled

    Abstract: No abstract text available
    Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2


    OCR Scan     		PDF PD-91477D IRF3415 O-220

    IRF3415 equivalent

    Abstract: IRFI3415 IRF1
    Text: P D - 9.1624 International IG R Rectifier IRFI3415 PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated VDss = 150V


    OCR Scan     		PDF IRFI3415 IRF3415 equivalent IRFI3415 IRF1

    IRF3415 equivalent

    Abstract: pn 222A IRFI3415 IRF3415 IRFI840G
    Text: International IOR Rectifier pd-9.1624 IRFI3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS D Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V Ds s = 1 5 0 V


    OCR Scan     		PDF IRFI3415 O-220 IRF3415 equivalent pn 222A IRFI3415 IRF3415 IRFI840G

    MARKING J9B

    Abstract: No abstract text available
    Text: PD- 9.1509B International I R Rectifier IRF3415S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description V d s s = 15 0 V


    OCR Scan     		PDF 1509B IRF3415S MARKING J9B

    Untitled

    Abstract: No abstract text available
    Text: PD-91509C International IGR Rectifier IRF3415S/L HEXFET Power MOSFET • • • • • • A dvanced Process Technology Surface M ount IRF3415S Low-profile through-hole (IRF3415L) 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF PD-91509C IRF3415S/L IRF3415S) IRF3415L)