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    Infineon Technologies AG IRF3205PBF

    MOSFET N-CH 55V 110A TO220AB
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    Infineon Technologies AG IRF3205ZSTRLPBF

    MOSFET N-CH 55V 75A D2PAK
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    DigiKey IRF3205ZSTRLPBF Cut Tape 3,409 1
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    Infineon Technologies AG IRF3205STRLPBF

    MOSFET N-CH 55V 110A D2PAK
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    Infineon Technologies AG AUIRF3205

    MOSFET N-CH 55V 75A TO220AB
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    Infineon Technologies AG AUIRF3205Z

    MOSFET N-CH 55V 75A TO220AB
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    IRF320 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF320 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF320 Intersil 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 ?, N-Channel Power MOSFETs Original PDF
    IRF320 Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 350-400 V Scan PDF
    IRF320 FCI POWER MOSFETs Scan PDF
    IRF320 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF320 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. Scan PDF
    IRF320 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF320 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF320 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF320 Motorola European Master Selection Guide 1986 Scan PDF
    IRF320 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRF320 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF320 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF320 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF320 Unknown FET Data Book Scan PDF
    IRF320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF320 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF320 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    IRF320 Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF
    IRF320 Siliconix MOSPOWER Design Data Book 1983 Scan PDF

    IRF320 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF3205

    Abstract: IA418 AN-994 IRF3205L IRF3205S IA-418
    Text: PD - 94149 IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International Rectifier


    Original
    IRF3205S/L IA-418. IRF3205 IA418 AN-994 IRF3205L IRF3205S IA-418 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF3205 TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET Description D The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


    Original
    IRF3205 O-220AB O-220 PDF

    IRF3205 application

    Abstract: irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2
    Text: PD - 9.1304B IRF3205S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF32305S Low-profile through-hole (IRF3205L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.008Ω G ID = 110A†


    Original
    1304B IRF3205S/L IRF32305S) IRF3205L) IRF3205 application irf3205 IRF3205 equivalent AN-994 IRF3205L OTTO T2 PDF

    IRF3205

    Abstract: IRF3205 equivalent irf3205 DRIVER driver for IRF3205 IRF3205 DATASHEET IRF3205 E DATASHEET IRF3205 IR PD-91279E datasheet for IRF3205 irf3205 mosfet transistor
    Text: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PD-91279E IRF3205 O-220 IRF3205 IRF3205 equivalent irf3205 DRIVER driver for IRF3205 IRF3205 DATASHEET IRF3205 E DATASHEET IRF3205 IR PD-91279E datasheet for IRF3205 irf3205 mosfet transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFETÆ Power MOSFET D VDSS = 55V RDS on = 8.0m! G ID = 110A…


    Original
    IRF3205SPbF IRF3205LPbF moun00 EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94791B IRF3205PbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description


    Original
    PD-94791B IRF3205PbF O-220 O-220AB PDF

    IRF3205S

    Abstract: AN-994 IRF530S
    Text: PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description


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    IRF3205S IRF3205S AN-994 IRF530S PDF

    IRF3205Z

    Abstract: No abstract text available
    Text: PD - 94653 IRF3205Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ


    Original
    IRF3205Z O-220AB IRF1010 IRF3205Z PDF

    IRF 640 mosfet

    Abstract: SEC IRF 640
    Text: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description


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    94653C IRF3205Z IRF3205ZS IRF3205ZL O-220AB IRF3205Z IRF3205ZS AN-994. IRF 640 mosfet SEC IRF 640 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF3205 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)98# I(DM) Max. (A) Pulsed I(D)69 @Temp (øC)100# IDM Max (@25øC Amb)390# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55õ


    Original
    IRF3205 PDF

    IRF 47

    Abstract: IRF32
    Text: PD - 94928 IRF3205VPbF • Lead-Free www.irf.com 1 1/6/04 IRF3205VPbF 2 www.irf.com IRF3205VPbF www.irf.com 3 IRF3205VPbF 4 www.irf.com IRF3205VPbF www.irf.com 5 IRF3205VPbF 6 www.irf.com IRF3205VPbF www.irf.com 7 IRF3205VPbF TO-220AB Package Outline Dimensions are shown in millimeters inches


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    IRF3205VPbF O-220AB IRF 47 IRF32 PDF

    diode 66a

    Abstract: IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS
    Text: PD - 94653B IRF3205Z IRF3205ZS IRF3205ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V


    Original
    94653B IRF3205Z IRF3205ZS IRF3205ZL AN-994. O-220AB diode 66a IRF 640 mosfet IRF3205Z IRF3205ZL IRF3205ZS PDF

    IRF3205

    Abstract: driver for IRF3205 irf3205 DRIVER IRF3205 equivalent irf3205 mosfet transistor irf3205 mosfet IRF3205 DATASHEET PD-91279E IRF3205 TO-220
    Text: PD-91279E IRF3205 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International


    Original
    PD-91279E IRF3205 O-220 O-220AB IRF3205 driver for IRF3205 irf3205 DRIVER IRF3205 equivalent irf3205 mosfet transistor irf3205 mosfet IRF3205 DATASHEET PD-91279E IRF3205 TO-220 PDF

    Diode 62a

    Abstract: AN-994 IRF530S marking 62a marking CODE 62A
    Text: IRF3205S/IRF3205L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance


    Original
    IRF3205S/IRF3205L EIA-418. Diode 62a AN-994 IRF530S marking 62a marking CODE 62A PDF

    ifr320

    Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202
    Text: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    IRF320, IRF321, IRF322, IRF323 ifr320 IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202 PDF

    IRF3205

    Abstract: marking 66a IRF3205ZPBF
    Text: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free


    Original
    IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AN-994. IRF3205 marking 66a IRF3205ZPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95129 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF AUTOMOTIVE MOSFET Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free


    Original
    IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF O-220AB. O-220AB PDF

    IRF3205

    Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
    Text: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V


    OCR Scan
    1279C IRF3205 O-220 IRF3205 IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1279D International Rectifier I R • • • • • • IRF3205 HEXFET Power MOSFET A dvanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 ° C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = 55 V


    OCR Scan
    1279D IRF3205 PDF

    5109d

    Abstract: No abstract text available
    Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan
    000510e IRF320/321/322/323 IRF321 IRF322 IRF323 00GS435 5109d PDF

    IRF3205 application

    Abstract: IRF3205 IR IRF3205S
    Text: PD - 9.1304B International IQ R Rectifier IRF3205S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF32305S • Low-profile through-hole (IRF3205L) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V


    OCR Scan
    IRF32305S) IRF3205L) IRF3205 application IRF3205 IR IRF3205S PDF

    IFR320

    Abstract: No abstract text available
    Text: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    IRF320, IRF321, IRF322, IRF323 RF322, IFR320 PDF

    SFN402A3

    Abstract: IRF320
    Text: '^ 8 3 6 8 6 0 2 SOLITRON DEVICES INC DE J fl3tflbG2 □ □ □ 0 3 D S ô q T-39-11 smoua B o ü tro n D E V I C E S , I NC. / POWER MOS DEVICE 400V/3A N Channel, TO-3 Package, IRF320 Equivalent The new Solitron Power MOS technology combines the efficient


    OCR Scan
    T-39-11 00V/3A) IRF320 SFN402A3 HP214A flF/450V SFN402A3 PDF

    IFR320

    Abstract: IRF322 IRF320
    Text: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate


    OCR Scan
    IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320 PDF