IRF9540N
Abstract: BU 11A
Text: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω
|
Original
|
IRF9540N
-100V
O-220
IRF9540N
BU 11A
|
PDF
|
IRF4905
Abstract: IRF4905 P-channel power irf1010 applications IRF1010 E IRF1010
Text: Previous Datasheet Index Next Data Sheet PD 9.1280A IRF4905 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
|
Original
|
IRF4905
IRF4905
IRF4905 P-channel power
irf1010 applications
IRF1010 E
IRF1010
|
PDF
|
IRF5210
Abstract: irf1010 applications IRF1010
Text: Previous Datasheet Index Next Data Sheet PD 9.1434 IRF5210 PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
|
Original
|
IRF5210
-100V
IRF5210
irf1010 applications
IRF1010
|
PDF
|
IRF540N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description
|
Original
|
IRF540N
O-220
commercial-indust10
IRF540N
IRF1010
|
PDF
|
IRF1010
Abstract: IRL630
Text: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V
|
Original
|
IRL630
O-220
a9246
IRF1010
IRL630
|
PDF
|
IRFIZ44N equivalent
Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
|
Original
|
IRFIZ44N
IRFIZ44N equivalent
IRF1010
IRFI840G
IRFIZ44N
IRFZ44N
IRFz44n equivalent
|
PDF
|
IRF1010
Abstract: IRFI1010N IRF1010N IRFI840G
Text: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1010N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
|
Original
|
IRFI1010N
IRF1010
IRFI1010N
IRF1010N
IRFI840G
|
PDF
|
MOSFET IRFZ46N
Abstract: IRFZ46N IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1277 IRFZ46N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G ID = 46A
|
Original
|
IRFZ46N
O-220
preIRF1010
MOSFET IRFZ46N
IRFZ46N
IRF1010
|
PDF
|
IRF1010
Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Text: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V
|
Original
|
IRFIZ48N
IRF1010
IRFI840G
IRFIZ48N
IRFZ48N
IRFZ48N equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 3.7mΩ G Description
|
Original
|
94634B
IRF1404Z
IRF1404ZS
IRF1404ZL
AN-994.
O-220AB
|
PDF
|
AUIRF1404
Abstract: AUIRF1404Z
Text: PD - 94634B IRF1404Z IRF1404ZS IRF1404ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 3.7mΩ G Description
|
Original
|
94634B
IRF1404Z
IRF1404ZS
IRF1404ZL
O-220AB
IRF140
AN-994.
AUIRF1404
AUIRF1404Z
|
PDF
|
AN-1005
Abstract: IRF1010
Text: PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 5.5mΩ
|
Original
|
5468A
IRF4104PbF
IRF4104SPbF
IRF4104LPbF
AN-994.
O-220AB
AN-1005
IRF1010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ
|
Original
|
5361A
IRF1010ZPbF
IRF1010ZSPbF
IRF1010ZLPbF
AN-994.
|
PDF
|
IRF10
Abstract: No abstract text available
Text: PD - 96040B IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 3.7mΩ
|
Original
|
96040B
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
O-220AB
AN-994.
O-220
IRF10
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PD - 95468A IRF4104PbF IRF4104SPbF IRF4104LPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 40V RDS on = 5.5mΩ
|
Original
|
5468A
IRF4104PbF
IRF4104SPbF
IRF4104LPbF
AN-994.
O-220AB
|
PDF
|
IRF 1630
Abstract: No abstract text available
Text: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ
|
Original
|
5361A
IRF1010ZPbF
IRF1010ZSPbF
IRF1010ZLPbF
AN-994.
IRF 1630
|
PDF
|
IRF3710ZPBF
Abstract: irf3710z IRF3710ZSPBF auirf3710z AN-994 IRF3710ZL IRF3710ZLPBF IRF3710ZS auirf
Text: PD - 95466A IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET
|
Original
|
5466A
IRF3710ZPbF
IRF3710ZSPbF
IRF3710ZLPbF
EIA-418.
O-220AB
IRF3710ZPBF
irf3710z
IRF3710ZSPBF
auirf3710z
AN-994
IRF3710ZL
IRF3710ZLPBF
IRF3710ZS
auirf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET V BR DSS D 40V RDS(on) typ.
|
Original
|
96040C
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET V BR DSS D 40V RDS(on) typ.
|
Original
|
96040C
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
|
Original
|
95483C
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
EIA-418.
O-220AB
|
PDF
|
AN-994
Abstract: irf1010 applications
Text: PD - 95483C IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
|
Original
|
95483C
IRF1010EZPbF
IRF1010EZSPbF
IRF1010EZLPbF
applica79)
EIA-418.
O-220AB
AN-994
irf1010 applications
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C IC = 15A, TC = 100°C E G tsc > 5µs, Tjmax = 175°C G E VCE on typ. = 1.55V @ 8A n-channel Applications • Appliance Drives • Inverters • UPS
|
Original
|
IRGS4615DPbF
IRGB4615DPbF
O-220AB
IRGS4615DTRRPbF
IRGS4615DTRLPbF
JESD47F)
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters
|
Original
|
IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
JESD47F)
O-220
|
PDF
|
