S202 TO2
Abstract: SCHEMATIC DIAGRAM REVERSE KWH METER SPCJ 4D29 IDMT relay SPA-ZC21 9pin d type Female PCB connector ABB breaker S5 SPA-ZC17 MARKING 4F7 IDMT OVERCURRENT relay
Text: SPAC 335 C and SPAC 336 C Feeder terminals User´s manual and Technical description B O fn = 50 60 Hz I n= 1 I n= 1 U n = 100 / 5 / 5 / 110 A I A( I o ) V(U o ) 2I > I I 2 SPAC 335 C I IRF 5 L1 I L3 U o I o IRF TEST INTERLOCK I >/I n GAS PRESSURE STEP MOTOR VOLTAGE
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750122-MUM
FIN-65101
S202 TO2
SCHEMATIC DIAGRAM REVERSE KWH METER
SPCJ 4D29
IDMT relay
SPA-ZC21
9pin d type Female PCB connector
ABB breaker S5
SPA-ZC17
MARKING 4F7
IDMT OVERCURRENT relay
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MOSFET IRF 940
Abstract: irf 940 irf 48v mosfet power MOSFET IRF data DIODE 851 tr/MOSFET IRF 940
Text: IRF MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 5.08 (0.200) typ. 1
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00A/ms
300ms,
MOSFET IRF 940
irf 940
irf 48v mosfet
power MOSFET IRF data
DIODE 851
tr/MOSFET IRF 940
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IRF Power MOSFET code marking
Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
Text: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5800PbF
OT-23.
IRF Power MOSFET code marking
IRF 535
IRF5800
IRF5850
SI3443DV
IRF MOSFET 10A P
MOSFET IRF 94
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IRF 511 MOSfet
Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Text: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier
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IRF5805PbF
OT-23.
IRF 511 MOSfet
IRF5850
IRF5851
IRF5852
IRF5805PBF
mosfet 23 Tsop-6
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IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
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irf 30A
Abstract: AUO-12403 U1 GRM39COG470J050AD irf 709 d2ps RESISTOR 1W GRM39X7R102K panasonic ceramic capacitor, .1uF 50v LMK212BJ225KG erj-m1wtf2m0u
Text: MAX1939: AMD Athlon XP Mobile Processor Solution MAX1939 is a dual-phase DC-DC switching regulator for the AMD Athlon Mobile processor. The MAX1939 can be evaluated using the MAX1938 EV kit. Although the board can support 60A of output current, the Athlon XP
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MAX1939:
MAX1939
MAX1938
QT269
irf 30A
AUO-12403 U1
GRM39COG470J050AD
irf 709
d2ps
RESISTOR 1W
GRM39X7R102K
panasonic ceramic capacitor, .1uF 50v
LMK212BJ225KG
erj-m1wtf2m0u
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AN1001
Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001
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PD-95474A
IRF5801PbF
AN1001)
10sec.
AN1001
IRF5803
IRF5804
IRF5805
IRF5806
IRF5850
IRF5851
SI3443DV
IRF AN1001
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irf 940
Abstract: No abstract text available
Text: PD - 95070 IRFR/U3303PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A
S
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IRFR/U3303PbF
IRFR3303)
IRFU3033)
O-252AA)
EIA-481
EIA-541.
EIA-481.
irf 940
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MOSFET IRF 570
Abstract: 40V 14A DPAK 950.83
Text: PD- 95083 IRLR/U2703PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.045Ω
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IRLR/U2703PbF
IRLR2703)
IRLU2703)
O-252AA)
EIA-481
EIA-541.
EIA-481.
MOSFET IRF 570
40V 14A DPAK
950.83
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Untitled
Abstract: No abstract text available
Text: 30E D • 7 ^ 2 3 7 □ □ 2 ì ? 4 3 □ ■ H ~ : 3 CI - I 3 Æ 7 S C S -T H O M S O N IRF 140 -141 RMD ia@i[Lli(gTOIRgo©l_ IRF 142 - 143 S 6 S-THOMSON • • • • n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on •d
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IRF140
IRF141
IRF143
IRF142
r-39-Ã
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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IRF series
Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Text: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs
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RF540
Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Text: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q
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540/FI-541/FI
542/FI-543/FI
IRF540
IRF540FI
IRF541
IRF541FI
IRF542
IRF542FI
IRF543
IRF543FI
RF540
b17a
q02c
IRF540 application
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Untitled
Abstract: No abstract text available
Text: IRFW/I740A A d van ced Power MOSFET FEATURES B V DSS = 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 1 0 0 .5 5 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K
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IRFW/I740A
/I740A
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Untitled
Abstract: No abstract text available
Text: IRFW/I730A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .0 Î 2 5 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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IRFW/I730A
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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P Channel Power MOSFET IRF
Abstract: IRF P CHANNEL MOSFET IRF n CHANNEL MOSFET IRF P CHANNEL MOSFET D-PAK mosfet n channel irf IRF n 30v
Text: L i t t l e F E T SERIES S O - 8 S T A N D A R D GATE 1 0 V D E V IC E LittleFET D E V IC E S V DSS ( V ) r DS(O N) 1 (A ) D EV IC E 0.030£2 6.3A RF1K49157 SO-8 N 0.060Î2 3.5A RF1K49086 SO-8 NN 30V PACKAGE 0.060Q 3.5A RF1K49221 SO-8 N 0.150Î2 2.5A
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RF1K49157
RF1K49086
RF1K49221
RF1K49223
RF1K49224
060n/0
O-251/2
MS012
O-262/3
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
IRF n CHANNEL MOSFET
IRF P CHANNEL MOSFET D-PAK
mosfet n channel irf
IRF n 30v
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VOGT 503
Abstract: 503 20 010 10 vogt vogt 503 20 vogt l9 TCA440N vogt 503 20 010 10 vogt l8 VOGT 503 10 VOGT 505 vogt l3
Text: TCA 440-N DESCRIPTION FEATURES TCA440 is a m onolithic 1C, especially devel oped for AM receivers up to 50MHz. It in cludes a RF stage with AGC, a balanced mixer, separate oscillator and an IF am plifi er with AGC. Because of its low current consumption and o f its internal stabilization
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440-N
TCA440
50MHz.
100dB
200mA
500/xA
L3-L11
D41-2519
VOGT 503
503 20 010 10 vogt
vogt 503 20
vogt l9
TCA440N
vogt 503 20 010 10
vogt l8
VOGT 503 10
VOGT 505
vogt l3
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irf 249 A
Abstract: No abstract text available
Text: IRFW/I720A Advanced Power MOSFET FEATURES B^DSS 400 V - ♦ Avalanche Rugged Technology 1 .8 Q CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW/I720A
irf 249 A
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IRF MOSFET 100A 200v
Abstract: MOSFET 150 N IRF
Text: IRFW/I740A A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW/I740A
IRF MOSFET 100A 200v
MOSFET 150 N IRF
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IRF 344
Abstract: IRF n 30v
Text: IRFW/I710A A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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IRFW/I710A
IRF 344
IRF n 30v
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IRFS630A
Abstract: No abstract text available
Text: IRFS630A Advanced Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0 . 4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10H A (M ax.) @ V DS = 200V I Low Rds(0n) ■ 0.333 £1 (Typ.)
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IRFS630A
Fig12.
IRFS630A
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Untitled
Abstract: No abstract text available
Text: IRF614 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V
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IRF614
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Untitled
Abstract: No abstract text available
Text: IRF614A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V
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IRF614A
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