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    IRF MOSFET 100A 100V Search Results

    IRF MOSFET 100A 100V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    IRF MOSFET 100A 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Equivalent IRF 740

    Abstract: IRF P CHANNEL MOSFET 100v IRFR3911 IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120
    Text: PD - 95373A IRFR3911PbF IRFU3911PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. Equivalent IRF 740 IRF P CHANNEL MOSFET 100v IRFR3911 IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120

    AN1001

    Abstract: EIA-541 IRFR3911 IRFU120 IRFU3911 R120 U120 4.5v to 100v input regulator
    Text: PD - 95373A IRFR3911PbF IRFU3911PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


    Original     		PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. AN1001 EIA-541 IRFR3911 IRFU120 IRFU3911 R120 U120 4.5v to 100v input regulator

    IRF MOSFET 100A 200v

    Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
    Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current


    Original     		PDF IRF5801PbF 10sec. IRF MOSFET 100A 200v IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806

    IRFR9120N

    Abstract: IRFU9120N
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V IRFR/U9120NPbF O-252AA) EIA-481 EIA-541. IRFR9120N IRFU9120N

    irf 100v 300A

    Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PDF PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481.

    AN1001

    Abstract: IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001
    Text: PD-95474A IRF5801PbF SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		PDF PD-95474A IRF5801PbF AN1001) 10sec. AN1001 IRF5803 IRF5804 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF AN1001

    irf 540 mosfet

    Abstract: MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf
    Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. irf 540 mosfet MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf

    irfp9140npbf

    Abstract: IRF9540N
    Text: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFP9140NPbF -100V O-247 IRF9540N -470A/ O-247AC IRFPE30 irfp9140npbf

    IRF Power MOSFET code marking

    Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple


    Original     		PDF -95076B IRFR430APbF IRFU430APbF IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator

    IRF Power MOSFET code marking

    Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
    Text: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PDF 94356B IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC

    Untitled

    Abstract: No abstract text available
    Text: PD - 96906C IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 96906C IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 Cur26)

    EIA-541

    Abstract: IRFR420A IRFU120 IRFU420A R120 U120 U420
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple


    Original     		PDF 5075A IRFR420APbF IRFU420APbF IRFR420A IRFU420A EIA-481 EIA-541. EIA-481. EIA-541 IRFR420A IRFU120 IRFU420A R120 U120 U420

    MOSFET IRF 380

    Abstract: IRF 504 IRFB4610PbF AN-994 IRF MOSFET 10A P IRF MOSFET 100A 100v IRF igbt gate driver
    Text: PD - 95936A IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G


    Original     		PDF 5936A IRFB4610PbF IRFS4610PbF IRFSL4610PbF O-262 O-220AB EIA-418. MOSFET IRF 380 IRF 504 IRFB4610PbF AN-994 IRF MOSFET 10A P IRF MOSFET 100A 100v IRF igbt gate driver

    AN-994

    Abstract: MOSFET 65V 75A irf 540 mosfet IRFS4310PBF
    Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 AN-994. AN-994 MOSFET 65V 75A irf 540 mosfet IRFS4310PBF

    IRFB4310

    Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
    Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.


    Original     		PDF 6894A IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262 IRFB4310 irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A

    Untitled

    Abstract: No abstract text available
    Text: PD - 96906A IRFB4610 IRFS4610 IRFSL4610 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 6906A IRFB4610 IRFS4610 IRFSL4610 O-220AB O-262 EIA-418.

    IRFB4310

    Abstract: irf 540 mosfet AN-994 IRFS4310 IRFSL4310 irf 100v 100A
    Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.


    Original     		PDF 6894A IRFB4310 IRFS4310 IRFSL4310 O-220 O-220AB O-262 IRFB4310 irf 540 mosfet AN-994 IRFS4310 IRFSL4310 irf 100v 100A

    IRFS4310

    Abstract: AN-994 SL4310 irf 540 mosfet IRFS4310PBF
    Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF O-220AB O-262 EIA-418. IRFS4310 AN-994 SL4310 irf 540 mosfet IRFS4310PBF

    F9530

    Abstract: 9533E IRF9530
    Text: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9530, IRF9533 -100V IRF9531, IRF9532 IRF9533 IRF9532, F9533 92CS-43327 F9530 9533E IRF9530

    1rf510

    Abstract: 1RF51
    Text: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ


    OCR Scan     		PDF M3DE271 IRF510/511/512/513 IRF51OR/511R/512R/513R IRF510, IRF511, IRF512, IRF513 IRF510R, IRF511R, IRF512R 1rf510 1RF51

    Untitled

    Abstract: No abstract text available
    Text: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited


    OCR Scan     		PDF IRF120, IRF121 IRF122,

    Untitled

    Abstract: No abstract text available
    Text: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRF130/ IRF130R/1 /132R /133R IRF130, 1RF131, IRF132, IRF133 IRF130R, IRF131R,

    IRF9511

    Abstract: No abstract text available
    Text: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRF9510, IRF9511 IRF9513 -220A -100V IRF9511, IRF9512 IRF9513 92CS-43275