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    IRF 613 Search Results

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    IRF 613 Price and Stock

    Rochester Electronics LLC IRF613

    N-CHANNEL POWER MOSFET
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    DigiKey IRF613 Bulk 2,940 919
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    Renesas Electronics Corporation IRF613

    - Bulk (Alt: IRF613)
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    Avnet Americas IRF613 Bulk 4 Weeks 1,106
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    Infineon Technologies AG IRF6613TRPBF

    MOSFETs 40V N-CH HEXFET 3.4mOhms 42nC
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    Mouser Electronics IRF6613TRPBF
    • 1 $2.3
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    New Jersey Semiconductor Products, Inc. IRF613

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    Bristol Electronics IRF613 2,603 3
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    New Jersey Semiconductor Products Inc IRF613

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    Quest Components IRF613 2,082
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    Find more IRF 613 price and stock on Findchips.com

    IRF 613 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF613 Fairchild Semiconductor N-Channel Power MOSFETs, 3.5A, 150-200V Scan PDF
    IRF613 FCI POWER MOSFETs Scan PDF
    IRF613 Frederick Components Power MOSFET Selection Guide Scan PDF
    IRF613 General Electric Power Transistor Data Book 1985 Scan PDF
    IRF613 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. Scan PDF
    IRF613 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF613 International Rectifier TO-220 N-Channel HEXFET Power MOSFET Scan PDF
    IRF613 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRF613 Motorola European Master Selection Guide 1986 Scan PDF
    IRF613 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF613 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF613 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF613 Unknown FET Data Book Scan PDF
    IRF613 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF613 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF613 National Semiconductor N-Channel Power MOSFETs Scan PDF
    IRF613 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRF613(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF613R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF613R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF

    IRF 613 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    abb spad 330

    Abstract: spgu 240 a1 spad 330 spgu 48 b2 IBM E54 PCB CIRCUIT MONITOR IBM E54 bs2 International Rectifier irf olivetti s12 IDMT relay spau 330
    Text: SPAU 330 C Overvoltage, undervoltage and residual voltage relay User´s manual and Technical description U > U < U 2 fn= 50Hz Un=100V / 110V U 60Hz Un=100V / 110V (U0 ) Uo 5 IRF U 12 U 23 U 31 IRF IRF SPAU 330 C 18.80 V – n (U o >) n (U o >>) t /t >[ %]


    Original     		PDF 750508-MUM FIN-65101 abb spad 330 spgu 240 a1 spad 330 spgu 48 b2 IBM E54 PCB CIRCUIT MONITOR IBM E54 bs2 International Rectifier irf olivetti s12 IDMT relay spau 330

    0A95 diode

    Abstract: irf 210a
    Text: SL6619 Direct Conversion FSK Data Receiver Preliminary Information DS3853 ISSUE 4.1 April 1998 Ordering Information The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all functions to convert a binary FSK modulated RF signal into a


    Original     		PDF SL6619 DS3853 SL6619 SL6619/KG/TP1N SL6619/nctions 0A95 diode irf 210a

    transistor 4F LNA

    Abstract: flo14 flo16 Varactor Diode RF DS3853 AN137 SL6619
    Text: SL6619 Direct Conversion FSK Data Receiver Preliminary Information Supersedes July 1996 version, DS3853 - 3.5 DS3853 - 4.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all


    Original     		PDF SL6619 DS3853 SL6619 transistor 4F LNA flo14 flo16 Varactor Diode RF AN137

    DS4410

    Abstract: flo16 Varactor Diode RF AN137 flo14 SL6679
    Text: SL6679 Direct Conversion FSK Data Receiver Preliminary Information Supersedes September 1996 version, DS4410 - 1.5 DS4410 - 2.1 April 1998 GTH ADJ TC ADJ IAGC OP TP LIM I VBATT BRF1 BRF CNT AFC2 The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450 MHz. The device integrates all


    Original     		PDF SL6679 DS4410 SL6679 flo16 Varactor Diode RF AN137 flo14

    AN199 philips

    Abstract: Audio Power Amplifier Drive an 7070 transformerless variable frequency drive irf transistors AN199-1
    Text: APPLICATION NOTE AN199 Using the SL6609A Direct Conversion Pager Receiver Supersedes March 1995 version, AN199-1.7 AN199-2.0 July 1998 This application note outlines a basic circuit for the SL6609A Direct Conversion Pager Receiver for use in standard paging applications at 153MHz, 282MHz and 450MHz. Fig. 1 is a block diagram of the SL6609A, showing the pin allocation


    Original     		PDF AN199 SL6609A AN199-1 AN199-2 153MHz, 282MHz 450MHz. SL6609A, AN199 philips Audio Power Amplifier Drive an 7070 transformerless variable frequency drive irf transistors

    IRF 260 N

    Abstract: irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF
    Text: IRLI3705N Package Outline HEXFET TO-220 Fullpak Outline Dimensions are shown in millimeters inches 10.60 (.417 ) 10.40 (.409 ) ø 3 .40 (.1 33) 3 .10 (.1 23) 4.80 (.189 ) 4.60 (.181 ) -A3.7 0 (.145) 3.2 0 (.126) 16 .0 0 (.630) 15 .8 0 (.622) 2.80 (.110)


    Original     		PDF IRLI3705N O-220 IRF 260 N irf 44 n IRF 409 irf 9246 P 181 YE IRF 1060 IRF 1040 9249B HEXFET IRF

    14.5M 1982

    Abstract: IRF1010E irf 9246 TO-247AC Package IRF1010
    Text: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2


    Original     		PDF IRFP048N O-247AC O-247-A 14.5M 1982 IRF1010E irf 9246 TO-247AC Package IRF1010

    14.5M 1982

    Abstract: irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n
    Text: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) NOT ES : 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 )


    Original     		PDF IRFP048N O-247AC O-247-A 14.5M 1982 irf 9246 IRF1010E TO-247AC Package IRF 1010 irf 44 n

    irfz34n equivalent

    Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
    Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1276C IRFZ34N O-220 irfz34n equivalent IRFZ34N IRFZ34N MOSFET *rfz34n

    irfz34n

    Abstract: No abstract text available
    Text: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 1276C IRFZ34N O-220 irfz34n

    IRF 042

    Abstract: irf 540 mosfet IRL3803 IRLI3803
    Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		PDF 1320B IRLI3803 O-220 IRF 042 irf 540 mosfet IRL3803 IRLI3803

    W922

    Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
    Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ24E O-220 W922 IRFIZ24E IRFZ24N EV700 irf*24n

    IRFIZ34N

    Abstract: IRFZ34N MOSFET 150 N IRF
    Text: PD - 9.1489A IRFIZ34N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ34N O-220 IRFIZ34N IRFZ34N MOSFET 150 N IRF

    IRFIZ46N

    Abstract: IRFZ46N MOSFET IRF 630 IRFZ46N equivalent
    Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ46N O-220 IRFIZ46N IRFZ46N MOSFET IRF 630 IRFZ46N equivalent

    gyrator

    Abstract: Audio Power Amplifier TOSHIBA circuit boards SL6609A 2SC5065 AN4399 DAP236K MA862 SL6619 vcxo philips
    Text: AN4399 Advice on using the SL6619 Application Note AN4399 ISSUE 1.6 April 1996 INTRODUCTION This application note outlines a basic circuit for the SL6619 Direct Conversion Pager Receiver for use in standard paging applications at 153MHz, 282MHz and 450MHz. An Evaluation Board based on 282MHz will be described and detailed setup procedure provided.


    Original     		PDF AN4399 SL6619 SL6619 153MHz, 282MHz 450MHz. gyrator Audio Power Amplifier TOSHIBA circuit boards SL6609A 2SC5065 AN4399 DAP236K MA862 vcxo philips

    irf 480

    Abstract: IRFIZ24E IRFZ24N IRFz24n equivalent
    Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ24E O-220 irf 480 IRFIZ24E IRFZ24N IRFz24n equivalent

    1501a

    Abstract: IRFZ24N IRFIZ24N irf 480
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ24N O-220 1501a IRFZ24N IRFIZ24N irf 480

    Equivalent IRF 44

    Abstract: ultra low igss pA IRL2505 IRLI2505
    Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D


    Original     		PDF IRLI2505 O-220 Equivalent IRF 44 ultra low igss pA IRL2505 IRLI2505

    irf 9246

    Abstract: IRF1010E 14.5M 1982 irf1010
    Text: IRFP048N Package Outline HEXFET TO-247AC Outline Dimensions are shown in millimeters inches -D - 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B- 0 .25 (.0 1 0) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 2X 1 2


    Original     		PDF IRFP048N O-247AC O-247-A irf 9246 IRF1010E 14.5M 1982 irf1010

    irf 44 n

    Abstract: 1329B IRLIZ34N IRLZ34N
    Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


    Original     		PDF 1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


    OCR Scan     		PDF O-220 IR9523 IRF9522 IRF9513 IRF9511 IRF9512 IRF9510 IRF9623 IRF9621 IRF9622 IRF 850 mosfet MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054003 33 H A R R IS 2 77 ■ HAS IRF610/611/612/613 IRF61 OR/611R/612R/613R N-Channel Power MQSFETs Avalanche Energy Rated* August 1991 Features Package T0 -22 0A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • ros on = 1-5 i i and 2 -4 ii • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRF610/611/612/613 IRF61 OR/611R/612R/613R IRF610, IRF611, IRF612, IRF610R, IRF611R, IRF612R F613R