irf 540 mosfet
Abstract: MOSFET IRF 941 MOS-FET IRF 540 IRFS4310PBF AN-994 irf 418 e980 MOSFET 65V 75A MOSFET IRF 540 irfb4310pbf
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
irf 540 mosfet
MOSFET IRF 941
MOS-FET IRF 540
IRFS4310PBF
AN-994
irf 418
e980
MOSFET 65V 75A
MOSFET IRF 540
irfb4310pbf
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IRFB4310
Abstract: irf 540 mosfet IRFS4310 AN-994 IRFSL4310 irf 30A
Text: PD - 96894A IRFB4310 IRFS4310 IRFSL4310 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.
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6894A
IRFB4310
IRFS4310
IRFSL4310
O-220
O-220AB
O-262
IRFB4310
irf 540 mosfet
IRFS4310
AN-994
IRFSL4310
irf 30A
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MOSFET IRF 540
Abstract: irf 540 mosfet AN-994 IRFS4310PBF
Text: PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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14275D
IRFB4310PbF
IRFS4310PbF
IRFSL4310PbF
O-220AB
O-262
EIA-418.
MOSFET IRF 540
irf 540 mosfet
AN-994
IRFS4310PBF
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TO-247AC Package
Abstract: IRFP064V irf 2030
Text: PD - 94112 IRFP064V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 5.5mΩ
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IRFP064V
O-247
TO-247AC Package
IRFP064V
irf 2030
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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W922
Abstract: IRFIZ24E IRFZ24N EV700 irf*24n
Text: PD - 9.1673A IRFIZ24E HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 60V RDS on = 0.071Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24E
O-220
W922
IRFIZ24E
IRFZ24N
EV700
irf*24n
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irf 44 n
Abstract: 1329B IRLIZ34N IRLZ34N
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
irf 44 n
1329B
IRLIZ34N
IRLZ34N
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IRFIZ24N
Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
IRFIZ24N
1501a
IRFZ24N
irf 480
irf 044 mosfet
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Equivalent IRF 44
Abstract: ultra low igss pA IRL2505 IRLI2505
Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRLI2505
O-220
Equivalent IRF 44
ultra low igss pA
IRL2505
IRLI2505
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1501a
Abstract: IRFZ24N IRFIZ24N irf 480
Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier
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IRFIZ24N
O-220
1501a
IRFZ24N
IRFIZ24N
irf 480
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Equivalent IRF 44
Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description
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1329B
IRLIZ34N
O-220
Equivalent IRF 44
IRLIZ34N
1329B
IRLZ34N
e4019
mosfet irf 150
irliz34
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IRFIZ46N
Abstract: IRFZ46N IRFZ46N equivalent irf 480 IRF 1040
Text: PD - 9.1306A IRFIZ46N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ46N
O-220
IRFIZ46N
IRFZ46N
IRFZ46N equivalent
irf 480
IRF 1040
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IRf 80 12 MOSFET
Abstract: IRL2505 IRLI2505 IRF 042 Equivalent IRF 44 EQUIVALENT OF IRL2505
Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRLI2505
O-220
IRf 80 12 MOSFET
IRL2505
IRLI2505
IRF 042
Equivalent IRF 44
EQUIVALENT OF IRL2505
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irf 480
Abstract: irl3803 equivalent ultra low igss pA IRL3803 IRLI3803 irf 680
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
irf 480
irl3803 equivalent
ultra low igss pA
IRL3803
IRLI3803
irf 680
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IRLIZ34N
Abstract: MOSFET IRF 630
Text: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ34N
IRLIZ34N
MOSFET IRF 630
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smd DIODE code marking 20A
Abstract: SMD-247 IRFP460AS MJ2400 smd code diode 20a mosfet 20A 500V
Text: PD-94011A IRFP460AS SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements
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PD-94011A
IRFP460AS
SMD-247
O-247
O-220
smd DIODE code marking 20A
SMD-247
IRFP460AS
MJ2400
smd code diode 20a
mosfet 20A 500V
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MOSFET IRF 540 AS A SWITCH
Abstract: No abstract text available
Text: PD- 94829 IRF840APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRF840APbF
AN1001)
O-220AB
08-Mar-07
MOSFET IRF 540 AS A SWITCH
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IRFI1310N
Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
Text: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRFI1310N
IRFI1310N
IRF1310N
4.5V TO 100V INPUT REGULATOR
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all transistor IRF 310
Abstract: MOSFET IRF 540 AS A SWITCH MOSFET IRF 1018 AN1001 irf 520 4.5v to 100v input regulator
Text: PD- 94829 IRF840APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRF840APbF
AN1001)
O-220AB
12-Mar-07
all transistor IRF 310
MOSFET IRF 540 AS A SWITCH
MOSFET IRF 1018
AN1001
irf 520
4.5v to 100v input regulator
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800w class d circuit diagram schematics
Abstract: schematic diagram inverter 12v to 24v 1000w schematic diagram inverter 2000w SCHEMATIC WITH IR2153 1000w class d circuit diagram schematics 200w dc to ac inverter Circuit diagram AC to DC smps for plasma tv circuit diagram 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM schematic diagram AC to DC converter 800W IRF 9234
Text: POWER MANAGEMENT PRODUCT SELECTION GUIDE Volume 2 THE POWER MANAGEMENT LEADER 1 THE POWER MANAGEMENT LEADER: International Rectifier is a pioneer and world leader in advanced power management technology, from digital, analog and mixed signal ICs to advanced circuit devices, power systems, and components.
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IRFz44n equivalent
Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ44N
O-220
IRFz44n equivalent
IRFIZ44N
IRFZ44N
IRFIZ44N equivalent
irf 630
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1530A
Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A
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IRFI9Z34N
O-220
1530A
f1010e
IRF 10A 55V
irf 9246
I840G
IRF9Z34N
IRFI9Z34N
IRF MOSFET 10A P
irf power mosfet
Equivalent IRF 44
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irf440
Abstract: No abstract text available
Text: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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IRF9140
IRF9230
IRF9240
irf440
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IRF541
Abstract: mtp25n10 IRF540 motorola IRF540 motorola irf542 IRF541 motorola
Text: MOTOROLA SC XSTRS/R F 1 4 E D II MOTOROLA fc,3b?2Si» OQfiTtaô? Ô I m S E M IC O N D U C T O R TECHNICAL DATA IRF540 IRF541 IRF542 P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate T M O S These T M O S Power FETs are designed for low
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IRF540
IRF541
IRF542
IRF541.
mtp25n10
IRF540 motorola
motorola irf542
IRF541 motorola
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