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    IRF 100A 500V Search Results

    IRF 100A 500V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    100A474S10Y Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A474S4Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A484S4-5Y Renesas Electronics Corporation 4K X 4 ECL I/O SRAM Visit Renesas Electronics Corporation
    100A474S4-5Y8 Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation
    100A474S8DF Renesas Electronics Corporation 1K X 4 ECL I/O SRAM, CENT Visit Renesas Electronics Corporation

    IRF 100A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF Power MOSFET code marking

    Abstract: EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC
    Text: PD - 94356B IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement


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    PDF 94356B IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking EIA-541 IRFR430A IRFU430A R120 IRF MOSFET 10A P 94356 IRF 250V 100A IRF 50A IRF GATE LOGIC

    IRF Power MOSFET code marking

    Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple


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    PDF -95076B IRFR430APbF IRFU430APbF IRFR430A IRFU430A EIA-481 EIA-541. EIA-481. IRF Power MOSFET code marking IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator

    EIA-541

    Abstract: IRFR420A IRFU120 IRFU420A R120 U120 U420
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple


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    PDF 5075A IRFR420APbF IRFU420APbF IRFR420A IRFU420A EIA-481 EIA-541. EIA-481. EIA-541 IRFR420A IRFU120 IRFU420A R120 U120 U420

    AN-1001

    Abstract: IRFR420A EIA-541 IRFU120 IRFU420A R120 U120
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple


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    PDF 5075A IRFR420APbF IRFU420APbF IRFR420A IRFU420A 12-Mar-07 AN-1001 IRFR420A EIA-541 IRFU120 IRFU420A R120 U120

    Untitled

    Abstract: No abstract text available
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD - 95075A IRFR420APbF IRFU420APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple


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    PDF 5075A IRFR420APbF IRFU420APbF IRFR420A IRFU420A 08-Mar-07

    MOSFET IRF 570

    Abstract: marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030
    Text: PD - 94081A IRFP31N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 0.15Ω 500V Features and Benefits


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    PDF 4081A IRFP31N50L 170ns O-247AC O-247AC MOSFET IRF 570 marking 31A 035H IRFP31N50L IRFPE30 PE30 irf 2030

    IRF 810

    Abstract: IRF 545 ac power control applications 400v 16a IRF 640 mosfet 035H IRFP17N50L IRFPE30 PE30 t 125 16a 250v 99AF
    Text: PD - 94322A IRFP17N50L SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.28Ω 500V Features and Benefits


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    PDF 4322A IRFP17N50L 170ns O-247AC O-247AC IRF 810 IRF 545 ac power control applications 400v 16a IRF 640 mosfet 035H IRFP17N50L IRFPE30 PE30 t 125 16a 250v 99AF

    Untitled

    Abstract: No abstract text available
    Text: IRFR825TRPBF VDSS RDS on typ. Trr typ. Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications 500V ID 92ns 1.05Ω 6.0A D-Pak IRFR825TRPBF Features and Benefits • Fast body diode eliminates the need for external


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    PDF IRFR825TRPBF O-252AA) EIA-481 EIA-541. EIA-481.

    MOSFET IRF 940

    Abstract: IRF 50A MOSFET IRF 635 4.5V TO 100V INPUT REGULATOR
    Text: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076 IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple


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    PDF IRFR430APbF IRFU430APbF IRFR430APbF EIA-481 EIA-541. EIA-481. MOSFET IRF 940 IRF 50A MOSFET IRF 635 4.5V TO 100V INPUT REGULATOR

    MOSFET IRF 1018

    Abstract: DAT 1018 P irf 1490 DAT 1018
    Text: IRF840APbF Static @ TJ = 25°C unless otherwise specified Parameter Min. Drain-to-Source Breakdown Voltage 500 ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– RDS(on) Static Drain-to-Source On-Resistance ––– VGS(th) Gate Threshold Voltage


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    PDF IRF840APbF O-220AB MOSFET IRF 1018 DAT 1018 P irf 1490 DAT 1018

    Untitled

    Abstract: No abstract text available
    Text: PD - 96433A IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external


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    PDF 6433A IRFR825TRPbF EIA-481 EIA-541. EIA-481.

    irfR825

    Abstract: MAX1783 101NS irfr825PBF
    Text: PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external


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    PDF IRFR825TRPbF EIA-481 EIA-541. EIA-481. irfR825 MAX1783 101NS irfr825PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96433 IRFR825TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V ID 92ns 1.05Ω 6.0A D Features and Benefits • Fast body diode eliminates the need for external


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    PDF IRFR825TRPbF EIA-481 EIA-541. EIA-481.

    irfR812

    Abstract: IRFR812TRPBF IRF 810
    Text: PD -97773 IRFR812TRPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. 500V Parameter 75ns 1.85Ω 3.6A D Features and Benefits • Fast body diode eliminates the need for external


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    PDF IRFR812TRPbF EIA-481 EIA-541. EIA-481. irfR812 IRFR812TRPBF IRF 810

    Equivalent IRF 740

    Abstract: IRF P CHANNEL MOSFET 100v IRFR3911 IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120
    Text: PD - 95373A IRFR3911PbF IRFU3911PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 100V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See


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    PDF 5373A IRFR3911PbF IRFU3911PbF AN1001) IRFR3911 IRFU3911 AN-994. Equivalent IRF 740 IRF P CHANNEL MOSFET 100v IRFR3911 IRF P CHANNEL MOSFET 10A 100V AN1001 EIA-541 IRFU120 IRFU3911 R120 U120

    HA1190

    Abstract: No abstract text available
    Text: IRFP440A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRFP440A HA1190

    SEC IRF 640

    Abstract: No abstract text available
    Text: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRF840A SEC IRF 640

    Untitled

    Abstract: No abstract text available
    Text: IRFS440A Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRFS440A

    sec irf840

    Abstract: IRF840 MOSFET SEC IRF 640
    Text: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRF840 sec irf840 IRF840 MOSFET SEC IRF 640

    Untitled

    Abstract: No abstract text available
    Text: IRFS440 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 6 .2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRFS440

    Untitled

    Abstract: No abstract text available
    Text: IRFP440 A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Rugged Gate Oxide Technology ^DS on = 0.85Î2 ♦ Lower Input Capacitance lD ♦ Avalanche Rugged Technology = 8.5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRFP440

    SEC IRF 640

    Abstract: No abstract text available
    Text: IRF840S A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRF840S SEC IRF 640

    SEC IRF 640

    Abstract: No abstract text available
    Text: IRFW/I840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V


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    PDF IRFW/I840A SEC IRF 640

    IRF450R

    Abstract: F450 RF-45
    Text: £S HARRIS IR f 4 5 0 /4 5 1 /4 5 2 /4 5 3 IR F 4 5 0 R /4 5 1 R /4 5 2 R /4 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features T O -2 0 4 A A • 11A and 13A, 450V - 500V • ros on = 0 .4 i! and 0 .5 fi • Single Pulse Avalanche Energy Rated*


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    PDF IRF450, IRF451, IRF452, IRF453 IRF450R, IRF451R, IRF452R IRF453R RE14b. IRF450R F450 RF-45