MIL-R-26
Abstract: MIL-R-22684 IRC gs-3 C 828 gs-3 GS-3 resistor IRC GS-3 TO
Text: Thick Film Semi-Precision Metal Glaze Power Resistors IRC Wire and Film Technologies Division GS-3 Series • Power rating of 3W @25°C; 2W @ 70°C • Resistance range from 1Ω to 3MΩ • Standard tolerances of ±1%, ±2%, ±5% • Superior surge performance
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MIL-R-26
MIL-R-10509-D
MIL-R-22684
MIL-R-26
MIL-R-22684
IRC gs-3
C 828
gs-3
GS-3 resistor
IRC GS-3 TO
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IRC 0805
Abstract: N2 SOT23-6 AVX 0805 dp502 b 1969 INDUCTOR CHIP FERRITE BEAD 0805 C3330 avx-1210 CIRKIT diagram Converter 24V to 12V Sanyo capacitors
Text: ZXRD1000 SERIES PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
D-81673
IRC 0805
N2 SOT23-6
AVX 0805
dp502
b 1969
INDUCTOR CHIP FERRITE BEAD 0805
C3330
avx-1210
CIRKIT diagram Converter 24V to 12V
Sanyo capacitors
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sanyo OS-CON
Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
Text: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
dr100
sanyo OS-CON
B806
IT 236 schaffner
dc swinging choke
20SV68M
6SA150M
n1 sot23
N2 SOT23-6
IRC 0805
sanyo CG
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simple circuit diagram of electronic choke low cost
Abstract: dp502 20SV68M IT 236 schaffner n1 sot23 Sanyo capacitors simple circuit diagram of electronic choke 680R BAT54 QSOP16
Text: ZXRD1000 SERIES PWM DC-DC CONTROLLERS HIGH EFFICIENCY SIMPLESYNC DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple
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ZXRD1000
synchrono611
D-81673
simple circuit diagram of electronic choke low cost
dp502
20SV68M
IT 236 schaffner
n1 sot23
Sanyo capacitors
simple circuit diagram of electronic choke
680R
BAT54
QSOP16
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82C84A-2
Abstract: No abstract text available
Text: OKI semiconductor MSM82C84A - 2 RS/G S/JS CLOCK GENERATOR AND DRIVER GENERAL DESCRIPTION The MSM82C84A-2RS/GS is a clo ck generator designed to generate MSM80C86 and MSM80C88 system clocks. Due to the use o f silicon gate CMOS technology, standby current is only 40
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MSM82C84A
MSM82C84A-2RS/GS
MSM80C86
MSM80C88
80C88
82C84A-2
82C84A-2
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bts132
Abstract: No abstract text available
Text: SIEMENS TEMPFET BTS132 VDS = 60 V lD = 24 A ^DS on = 0.065 Q • • • • • N channel E nhancem ent mode Logic level Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B ') O bserve circ u it design hints (see chapter Technical Inform ation)!
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BTS132
bts132
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Untitled
Abstract: No abstract text available
Text: O K I semiconductor MSM82C84A - 2 RS/GS/JS CLOCK GENERATOR AND DRIVER GENERAL DESCRIPTION The M SM 82C84A-2RS/G S is a clo ck generator designed to generate MSM80C86 and M SM 80C88 system clocks. Due to the use o f silicon gate CMOS technology, standby current is o n ly 4 0 MA <M A X
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MSM82C84A
82C84A-2RS/G
MSM80C86
80C88
82C84A-2
82C84A-2
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2412 is N -C h a n n e l MOS Field E ffect T ra n s is to r de sig n e d fo r high speed s w itc h in g a p p lic a tio n s . FEATURES •
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2SK2412
2SK2412
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tc 8066
Abstract: 2sk2370 K2369
Text: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N -C hannel MOS Field E ffect T ra n sis- PACKAGE D IM E N S IO N S in m illim e te rs to r d e sig n e d fo r high v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2369/2SK2370
2SK2369/2SK2370
2SK2369:
2SK2370:
tc 8066
2sk2370
K2369
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5T3824
Abstract: A5T3821 5T3821 a5t3822 a5t3 2N5358 2N5364 A5T3824 5T3822 5T3823
Text: T Y P E S A5T3821 T H R U A5T3824 N - C H A N N E L S IL IC O N J U N C T I O N F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 1 1 1 5 0 7 , J U L Y 1971 S ILE C T * F IE L D -E F F E C T T R A N SISTO R S* • Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle
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A5T3821
A5T3824
100-mil
5T3821,
5T3822
5T3824
5T3821
a5t3822
a5t3
2N5358
2N5364
5T3823
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BTS 110
Abstract: No abstract text available
Text: Sf E M E U S TEMPFET BTS110 VDS = 100 V lD = 10 A ^DS on = 0-2 O • • • • N channel Enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see chapter Technical Inform ation)!
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BTS110
7078-A
008-A
BTS 110
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Untitled
Abstract: No abstract text available
Text: S IE M tfS IS TEMPFET VDS lD ^ D S o n • • • • • BTS131 = 50 V = 25 A = 0.06 O N channel E nhancem ent mode Logic level Tem perature sensor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see cha pter Technical Inform ation)!
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BTS131
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS T his p ro d u c t is n -C h a n e l M O S F ield E ffe c t T ra n s is to r d e s ig n e d high in m illim e te rs c u rre n t s w itch in g a p p lica tio n .
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2SK2941
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FDS6679AZ
Abstract: No abstract text available
Text: SEM IC O N D U C TO R FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mQ General Description Features T h is P -C h a n n e l M O S F E T is p rod u cte d u sing Fa irchild S e m ic o n d u c to r’s a d va n ce d P o w e rT re n ch p roce ss th a t has
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FDS6679AZ
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Untitled
Abstract: No abstract text available
Text: SEM IC O N D U C TO R FDB8445 N-Channel PowerTrench® MOSFET 40V, 70A, 9mQ Features Applications • Typ rDS 0n = 6.8mQ at VGS = 10V, lD = 70A ■ Automotive Engine Control ■ Typ Qg(1o) = 44nC at VGS = 10V ■ Powertrain Management ■ Low Miller Charge
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FDB8445
O-263AB
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2sk2486
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2486 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2486is N-Channel MOS Field Effect T ra n s is to r designed PACKAGE D IM E N S IO N S in m illim e te r fo r hig h v o lta g e s w itc h in g applications,
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2SK2486
2SK2486
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STD5N20
Abstract: No abstract text available
Text: STD5N20 N - CHANNEL 200V - 0.7CI - 5A - TO-251/TO-252 POWER MOS TRANSISTOR TYPE STD5N 20 V dss 200 V R d S o Id ii < 0.8 Q. 5 A • . . . . . . . TYPICAL RDS(on) = 0.7 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STD5N20
O-251/TO-252
O-251)
O-252)
O-252
0068772-B
STD5N20
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Z i! R8D lS S l[LliSTl^©iBOi STB7NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB7NA 40 V ds s RDS(on) Id 400 V < 1 Q. 6.5 A • ■ . . ■ . . . TYPICAL RDS(on) = 0.82 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STB7NA40
O-262)
O-263)
O-262
O-263
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C5797
Abstract: No abstract text available
Text: Zi! SGS-THOMSON R8D lS S l[LliSTl^©iBOi STB5NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STB5NA 50 dss 500 V R D S (on) < 1.6 0 Id 5 A • ■ . . ■ . . . TYPICAL RDS(on) = 1.2 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STB5NA50
O-262)
O-263)
C5797
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Z i! R8D lS S l[LliSTl^©iBOi STB8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STB8NA 50 dss 500 V R D S (on) Id < 0.8 5 Ç1 8 A • ■ . . ■ . . . TYPICAL RDS(on) = 0.7 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STB8NA50
O-262)
O-263)
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IRZ 46
Abstract: No abstract text available
Text: SGS-THOMSON Z i! R8D lS S l[LliSTl^©iBOi STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STB6NA 80 dss 800 V RDS(on) Id < 1 .9 Q 5 .7 A • ■ . . ■ . . . TYPICAL RDS(on) = 1-68 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STB6NA80
O-262)
O-263)
IRZ 46
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Untitled
Abstract: No abstract text available
Text: IRFP450 N - CHANNEL 500V - 0.33Í2 - 14A - TO-247 PowerMESH MOSFET TYPE IR F P 4 5 0 V R d s s 500 V d Id S o ii < 0.4 Q. 14 A • TYPICAL RDS(on) = 0.33 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED
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IRFP450
O-247
P025P
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Untitled
Abstract: No abstract text available
Text: IRF730 N - CHANNEL 400V - 0.75 £2 - 5.5A - TO-220 PowerMESH MOSFET TYPE IR F 7 3 0 V dss 400 V R d Id S o ii < 1 Q. 5 .5 A • TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED
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IRF730
O-220
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON Z i RülDeæi[Liero iDei ! STB6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STB6NA 60 V dss R D S o n 600 V < 1 .2 Q Id 6 .5 A • ■ . . ■ . . . TYPICAL RDS(on) = 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STB6NA60
O-262)
O-263)
O-262
O-263
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