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    IR-LASER-DIODE 808NM 300MW Search Results

    IR-LASER-DIODE 808NM 300MW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    IR-LASER-DIODE 808NM 300MW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    U-LD-80C046D-PRELIMINARY

    Abstract: 808nm 300mW 808nm 300mw laser diode 808nm laser 300mw laser diode 300mw 808nm 300 mw laser diode laser diode 808nm Laser Diode 808nm 300mw
    Text: U-LD-80C046D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80C046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18（ψ5.6mm ）,With Pb free glass cap,no PD (3) Power Output: 300mW ■External dimensions(Unit : mm)


    Original     		U-LD-80C046D-preliminary 808nm O-185 300mW U-LD-80C046D-PRELIMINARY 808nm 300mW 808nm 300mw laser diode 808nm laser 300mw laser diode 300mw 808nm 300 mw laser diode laser diode 808nm Laser Diode 808nm 300mw PDF

    U-CP-80C0055-preliminary

    Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
    Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)


    Original     		U-CP-80C0055-preliminary 808nm 886-3-g U-CP-80C0055-preliminary 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip PDF

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes 808nm IR Laser Diode LCU80C046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-18（ψ5.6mm ）,With Pb free glass cap,no PD (3) Power Output: 300mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)


    Original     		808nm LCU80C046D-preliminary 300mW divers-vis/lcu/lcu80c046d PDF

    IR-Laser-Diode 808nm 300mw

    Abstract: 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU 500MW ir laser
    Text: 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature


    Original     		8052-1313-AU 808nm 500mW 500mW 200mW 300mW) IR-Laser-Diode 808nm 300mw 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU ir laser PDF

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


    Original     		RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI PDF