IR DIODES 0B Search Results

IR DIODES 0B Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

IR DIODES 0B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
GC4711-00 Abstract: No abstract text available Text: GC4701 - GC4750 TM CONTROL DEVICES – LIMITER DIODES RoHS Compliant KEY FEATURES DESCRIPTION 0B This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. • Available as packaged devices or as chips for hybrid applications • Low Loss	Original	GC4701 GC4750 2002/95/EC. 18Ghz GC4700 GC47xx GC4711-00	PDF
GC4750 Abstract: Ku band limiter GC4701 gc4700 gc470 microwave limiter band Limiter GC4701-00 GC4702-00 microwave chip limiter Text: GC4701 - GC4750 TM CONTROL DEVICES – LIMITER DIODES RoHS Compliant KEY FEATURES DESCRIPTION 0B This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. • Available as packaged devices or as chips for hybrid applications • Low Loss	Original	GC4701 GC4750 2002/95/EC. 18Ghz GC4700 GC47xx GC4750 Ku band limiter gc470 microwave limiter band Limiter GC4701-00 GC4702-00 microwave chip limiter	PDF
UMX5101 Abstract: No abstract text available Text: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES DESCRIPTION 0B • Ultra low magnetic construction The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8 J/T . • Thermally matched configuration The diodes are offered in a surface mount package. The SM package utilizes a square end cap	Original	UMX5101 UMX5101	PDF
Untitled Abstract: No abstract text available Text: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES DESCRIPTION 0B • Ultra low magnetic construction The UMX5101 PIN diodes have a magnetic moment at 7 T of 2E-8 J/T . • Thermally matched configuration The diodes are offered in a surface mount package. The SM package utilizes a square end cap	Original	UMX5101 UMX5101	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062	PDF
BC517 spice model Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information	Original	VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S	PDF
D3S03 Abstract: No abstract text available Text: Data Sheet No. PD-2.092 INTERNATIONAL RECTIFIER IT O R I IR D 3 8 9 9 , IR D 3 9 0 9 S E R IE S S O and 30 Amp Past Recovery Rectifier Diodes Description Major Ratings and Characteristics This range of fast recovery diodes is designed fo r applications in DC power supplies, inverters,	OCR Scan		PDF
BB106 Abstract: BA280 BB205B BB205 diode ba280 BB205G BA102 sod-23 SOD-52 DIODE BA243 Text: Diodes book 1 part 3 silicon whiskerless diodes Type No. £ Description 3 O Max. Reverse Recovery Tim e a c f a V rrm I frm Ir avi V (m A ) (m A \| Cdmax V f (pF) (V ) m ax a t Ip trr If <mAl (ns) (m A ) Vr IV ) Hl ( f i) fa {m A) BA314 Low voltage stabiliser	OCR Scan	BA314 DO-35 BA316 BA317 BA318 BAV10 BAV18 BAV19 BB106 BA280 BB205B BB205 diode ba280 BB205G BA102 sod-23 SOD-52 DIODE BA243	PDF
MT1115 Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir	OCR Scan	108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117	PDF
germanium rectifier diode Abstract: Germanium rectifier CV710 germanium diode CV7109 microwave mixer diode CV7108 Germanium Amplifier noise diode Germanium Mixer Diodes Text: GERMANIUM MICROWAVE MIXER DIODE GEM3 GEM4 C oaxial point contact germ anium diodes intended fo r u se in pretuned c en tim e tric low n o is e m ix e r c ir c u its u p to l2 G c /s . The sp re a d of adm ittance fig u re s at 12G e/s is v e ry sm a ll. GEM3 and 4 a re the com m ercial	OCR Scan	12Gc/s CV7108 CV7109 SO-26 spot100 500Mc/s 10Mc/s 9375Mc/s germanium rectifier diode Germanium rectifier CV710 germanium diode microwave mixer diode Germanium Amplifier noise diode Germanium Mixer Diodes	PDF
Germanium diode 0.2V Abstract: germanium rectifier diode GEM1 microwave mixer diode Germanium Mixer Diodes Germanium power Text: GEMI GERMANIUM M ICRO W AVE M IXER DIODE GEM2 Coaxial diodes Intended fo r u se in pretuned e en tim e tric low noise m ix e r c irc u its up to 12G c/s. The two types have iden tical dim ensions and c h a ra c te ris tic s but the p o larity i s re v e rs e d . The p a ir a re intended fo r u se in balanced m ixeé c irc u its .	OCR Scan	12Gc/s. SO-26 10Mc/s 9375Mc/s 170S2. Germanium diode 0.2V germanium rectifier diode GEM1 microwave mixer diode Germanium Mixer Diodes Germanium power	PDF
BZW07-43B Abstract: thomson transil Text: S —THOMSON S IC -, T H O M S O N -C iw O D f 7 ^ 5 3 7 59 C 0 2 6 5 5 D ? "-//.> 2 B Z W 0 7 -1 0 ,B - > É È w 0 7 - 1 0DG2fc>55 1 0 ,B DIVISION SEMICONDUCTEURS UNI - A N D B ID IR E C T IO N A L T R A N S IE N T V O LT A G E S U P P R E S S O R S DIODES D E PROTECTION UN! - E T BIDIRECTIONNELLES	OCR Scan	kW/8-20 BZW07-43B thomson transil	PDF
Vactec 8441b Abstract: VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes Text: 20/07 '00 11:02 01189845425 PACER COMPONENTS V T B8 44 0B , 8441B VTB Process Photodiodes 7'W 7' A P A C K A G E D IM E N S IO N S \r inch mm -ilû (7.B7) .070 (1.7B) .060 (1.52) (f^ 3 ,soï 60) H0M‘ fib MINIMUM .315 (6-00) .305 (7.75) (5.00) NOM. (5-00)	OCR Scan	VTB8440B, 8441B in215 2850K 2S50K 80Qnrp Vactec 8441b VTB8441B Ir photodiodes 2B50 ID12 VTB8440B VTB844DB Vactec VTB process photodiodes photodiodes	PDF
DSI35 Abstract: dsaI35-18a DS35-12A DSA3516 ds35 690 600 Text: Rectifier Diodes Avalanche Diodes vB B„ = 800 - tsoo v nnM = 80 A r riM o ; IF(AV M = 49 A v RSM V V * V 900 1300 1300 1700 1900 1300 1750 1950 v r V 4 \| An° de on stud Ì Cathode "j" on stud 800 1200 DS35-0BA DS35-12A DSI35-08A DSI35-12A 1200 1600	OCR Scan	DSI35-08A DSI35-12A DSAI35-12A DSAI35-16A DSAI35-18A 1/4-28UNF DS35-0BA DS35-12A DSA35-12A DSA35-16A DSI35 dsaI35-18a DSA3516 ds35 690 600	PDF

KLB-520 Abstract: No abstract text available Text: KODEN5H! CORP. LIGHT EMITTING DIODES AIInGaP KLB-520 Y-0B-T DIMENSIONS(Unit : mm) KLB-520 Y-08-T S A IIn G a P ^ ft£ V * -K ^ 0 The KLB-520 Y-08-T is a high-intensity AllnGaP LED attached high-performance lens. FEATURES Small SMD Packaged ±5deg Beam angle ±5deg	OCR Scan	KLB-520 Y-08-T Y-08-T 100ms.	PDF
T-75 A HIGH VOLTAGE DIODES Abstract: ultraFast Recovery Bridge Rectifier fast recovery bridge rectifier BRIDGE RECTIFIERS full wave bridge rectifier Full wave rectifier full wave rectifier 1 PHASE 2HVFWB10KCUF 2HVFWB10KDUF 2HVFWB15KDUF Text: 2?0bûHb 0 0 0 0 1 7 4 TÛ3 Ir jN ^ I —F \W C ^ r - SERIES HVFWB UF 5 to 20 KV 2 Amps. 75 ns. Recovery Ultra-Fast • High Voltage • Full-Wave Rectifier Bridge Assemblies HVCA Number Repetitive Peak Reverse Voltage VRRM PerLeg V Volts Avg. Forward Current M ax	OCR Scan	2HVFWB10KCUF T-75 A HIGH VOLTAGE DIODES ultraFast Recovery Bridge Rectifier fast recovery bridge rectifier BRIDGE RECTIFIERS full wave bridge rectifier Full wave rectifier full wave rectifier 1 PHASE 2HVFWB10KDUF 2HVFWB15KDUF	PDF
Untitled Abstract: No abstract text available Text: International Recti fi 6 f IÔR PD -5.05 0B PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT Features V • G en eratio n 4 IG BT tech nology • U ltraFast: O ptim ize d for high operating fre q u e n cie s 8 -4 0 kH z In hard sw itching, >200	OCR Scan	GA75TS60U	PDF
RLR4002 Abstract: RLR4001 1SR154 1SR154-400 1SR154-600 RLR4003 RLR4004 rectifier part no Text: lumm Rectifier Diodes S M Various series are available in pin 2 mini power molded and glass sealed leadless packages. 1SR154 series will find wide applications on vehicle devices and small power supplies. •G eneral Purpose Rectifier Diodes Absolute maximum ratings Ta= 258C	OCR Scan	1SR154 1SR154-400 1SR154-600 r1SR154-800 RLR4001 LL-41 RLR4002 LL-41 TE-21 RLR4003 RLR4004 rectifier part no	PDF
smd 2t1 Abstract: 1PS59SB10 marking code a2 SMD diode MLC358 A2 DIODE SMD CODE MARKING smd diode marking code a2 A11 MARKING CODE 5 1PS59SB15 1PS59SB14 1PS59SB15 Text: Philips Semiconductors Product specification Schottky barrier double diodes FEATURES 1PS59SB10 series PINNING • Low forward voltage 1PS59SB. PIN • Guard ring protected • Small SMD package. APPLICATIONS 10 14 15 16 1 a 2 n.c. ai k2 ai a2 ki k2 3 k	OCR Scan	1PS59SB10 1PS59SB14 1PS59SB15 1PS59SB16 1PS59SB. MSA314 711Dfi2b smd 2t1 marking code a2 SMD diode MLC358 A2 DIODE SMD CODE MARKING smd diode marking code a2 A11 MARKING CODE 5 1PS59SB15	PDF
Untitled Abstract: No abstract text available Text: INTERNATIONAL RECTIFIER bSE D • 4flSSMSS 0 0 1 7 2 0b bfifi ■ INR PD-2.322 International [iorj Rectifier m br 253s c t m br 2545c t SCHOTTKY RECTIFIER 30 Amp Ma]or Ratings and Characteristics Characteristics Description/Features MBR25.CT Units lF AV Rectangular	OCR Scan	2545c MBR25. T0-220 12CTQ 12CTQ045 D-477	PDF
Mullard Mullard quick reference guide Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)	OCR Scan	BZX91 1N825 1N827 1N829 1N914 1N916 1N4001G, CV7367 1N4002G, CV7756 Mullard Mullard quick reference guide CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier	PDF
1000 v fast recovery rectifier diodes Abstract: M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564 Text: 5bE D m 711002b □DM0575 T22 H P H I N Maintenance type - not for new designs pnmps Avalanche fast soft-recovery rectifier diodes PHILIPS INTERNATIONAL DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID	OCR Scan	M0575 BYD34 1000 v fast recovery rectifier diodes M057 BYD34D BYD34G BYD34J BYD34K BYD34M Philips FA 564	PDF
T20 96 diode Abstract: BA318 BA316 BA317 0D2T xfsm IEC134 Text: b'IE ]> • ^ 5 3 ^ 3 1 0D2bl5b 2TT N AUER PHILIPS/DISCRETE IAPX BA316 BA317 BA318 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li	OCR Scan	bS3131 BA316 BA317 BA318 DO-35 BA316, BA317 BA318. BA316 T20 96 diode BA318 0D2T xfsm IEC134	PDF
zener diode zP Abstract: Y6 ZENER DIODE Zener diode ZP 56 Zener diode ZPY 75 Zener diode ZPY 30 y39 diode Zener diode ZPY 18 Zener Diode Glass 50v Zener diode ZPY 51 zener diode ZP 33 A Text: f ^ G en eral ^ S e m i c o n d u c t o r _ ZPY1 thfU ZPY100 ^ Zener Diodes Vz Range 1.0, 3.9 to 100V Power Dissipation 1.3W DO-2Q4AL DO-41 Glass Features • Silicon Planar Power Zener Diodes >For use in stabilizing and clipping circuits with	OCR Scan	ZPY100 DO-41 ZMY10 ZMY100. 10K/box 100lllA zener diode zP Y6 ZENER DIODE Zener diode ZP 56 Zener diode ZPY 75 Zener diode ZPY 30 y39 diode Zener diode ZPY 18 Zener Diode Glass 50v Zener diode ZPY 51 zener diode ZP 33 A	PDF

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IR DIODES 0B Search Results

IR DIODES 0B Result Highlights (5)

IR DIODES 0B Datasheets Context Search

GC4711-00

GC4750

UMX5101

Untitled

2x062h

BC517 spice model

D3S03

BB106

MT1115

germanium rectifier diode

Germanium diode 0.2V

BZW07-43B

Vactec 8441b

DSI35

KLB-520

T-75 A HIGH VOLTAGE DIODES

Untitled

RLR4002

smd 2t1

Untitled

Mullard Mullard quick reference guide

1000 v fast recovery rectifier diodes

T20 96 diode

zener diode zP