Untitled
Abstract: No abstract text available
Text: PD - 95169A IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5169A
IRG4BC30UPbF
O-220AB
O-220AB
4BC30UPbF
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Untitled
Abstract: No abstract text available
Text: PD - 95169A IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5169A
IRG4BC30UPbF
O-220AB
O-220AB
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AN-994
Abstract: IRGBC20K-S IRGBC20M-S
Text: 95167 IRG4BC20K-SPbF Short Circuit Rated UltraFast IGBT Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter
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IRG4BC20K-SPbF
IRGBC20(
EIA-418.
AN-994
IRGBC20K-S
IRGBC20M-S
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Untitled
Abstract: No abstract text available
Text: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4
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5160A
IRF5803D2PbF
EIA-481
EIA-541.
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st 95160
Abstract: No abstract text available
Text: PD- 95160 IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free Description FETKY MOSFET & Schottky Diode 1 8 K A 2 7 K S
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IRF5803D2PbF
EIA-481
EIA-541.
st 95160
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IRF7807D1
Abstract: No abstract text available
Text: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4
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5160A
IRF5803D2PbF
EIA-481
EIA-541.
IRF7807D1
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ic AM 12A
Abstract: TRANSISTOR bu 406 E178
Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC30UPbF
O-220AB
O-220AB
-220AB
ic AM 12A
TRANSISTOR bu 406
E178
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644NS
Abstract: IRF644NLPBF
Text: PD - 95161 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF644NPbF IRF644NSPbF IRF644NLPbF l HEXFET Power MOSFET
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O-220
O-220AB
AN-994.
IRF644N)
IRF644NS/L)
644NS
IRF644NLPBF
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Untitled
Abstract: No abstract text available
Text: PD - 95169 IRG4BC30UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC30UPbF
O-220AB
O-220AB
-220AB
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AN-994
Abstract: IRGBC20K-S IRGBC20M-S
Text: 95167 IRG4BC20K-SPbF Short Circuit Rated UltraFast IGBT Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter
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IRG4BC20K-SPbF
IRGBC20
EIA-418.
AN-994
IRGBC20K-S
IRGBC20M-S
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EIA-541
Abstract: IRF7101 MS-012AA
Text: PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3
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IRF7101PbF
EIA-481
EIA-541.
EIA-541
IRF7101
MS-012AA
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IRF7101
Abstract: MS-012AA IRF7204PBF
Text: PD - 95165 IRF7204PbF Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l A D 1 8 S 2 7 D S 3 6 D G 4 5
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IRF7204PbF
EIA-481
EIA-541.
IRF7101
MS-012AA
IRF7204PBF
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Untitled
Abstract: No abstract text available
Text: PD - 95165 IRF7204PbF Adavanced Process Technology l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l A D 1 8 S 2 7 D S 3 6 D 4 5 D
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IRF7204PbF
EIA-481
EIA-541.
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diode BY 127
Abstract: IRF7101 MS-012AA IRF7207
Text: PD - 95166 IRF7207PbF HEXFET Power MOSFET Generation 5 Technology P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l l A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS on = 0.06Ω
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IRF7207PbF
EIA-481
EIA-541.
diode BY 127
IRF7101
MS-012AA
IRF7207
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EIA-541
Abstract: Si4410DYPbF
Text: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced
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Si4410DYPbF
800mW
EIA-481
EIA-541.
EIA-541
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IRf 48 MOSFET
Abstract: transistor irf 649 irf7105pbf f710 IRF7101 MS-012AA
Text: PD - 95164 IRF7105PbF Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 N-CHANNEL MOSFET
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IRF7105PbF
EIA-481
EIA-541.
IRf 48 MOSFET
transistor irf 649
irf7105pbf
f710
IRF7101
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD - 95164 IRF7105PbF Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 G1 S2 G2 N-CHANNEL MOSFET
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IRF7105PbF
EIA-481
EIA-541.
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srf 3417
Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Text: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge
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BRO254-07B
srf 3417
transistor srf 3417
SKY77329
transistor tt 2170 em
digrf
SKY77519
MARKING CODE EA1
SKY77408
sky72302-21
sky77506
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Untitled
Abstract: No abstract text available
Text: I¡meaî HS9516 v ir ^ v ^ • K A *A C o rp o ra tio n ^ SIGNAL PROCESSING EXCELLENCE COMPLETE 0.0008% ACCURATE 16-BIT ADC FEATURES ■ ■ ■ ■ ■ ■ ■ True 16-bit (±0.0008%) linearity error Full 16-bit resolution (1 part in 65,536) No missing codes (16-bits) 0°C to +70°C
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HS9516
16-BIT)
16-bit
16-bit
16-bits)
10ppm/
HS9516
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barretter
Abstract: osram Barretter osram valves Scans-001739 Scans-0017391
Text: SR M ade in England. : :kìf> BARRETTERS CURRENT Ir REGULATORS F o r u s e in s e r ie s w ith 0 .3 a m p . V a lv e s . A pprox. D im ensions : Overall length 130 m /m . M a x im u m diameter of bulb 64 m lm . F o r p r ic e s se e p a g e s 1 2 6 -1 2 9 .
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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barretter
Abstract: osram Barretter TRIODE AL 12-1 osram valves MSP432 BA 2511 ms4b LTSA valve Scans-031 VALVE S23
Text: oäs» MADE IN ENGLAND 1936 1937 RADIO SEASON IERAL ELECTRIC C? LTP ENGLAND MADE IN ENGLAND. CONTENTS. For Index to individual valve types see page 132 2-YOLT B A T T E R Y V A L V E S . A.C. M A IN S VA LV ES (In d ire c tly H eated )
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71-S5
barretter
osram Barretter
TRIODE AL 12-1
osram valves
MSP432
BA 2511
ms4b
LTSA valve
Scans-031
VALVE S23
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11PM104
thyristor TAG 8506
nais inverter vf 7f operation manual
922AA1Y-A4P
optek A400 817
Sprague 513D
sprague 926c
Sprague 195P
Rapa relay 12vdc
triac tag 8948
Mascot 719
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Untitled
Abstract: No abstract text available
Text: SIGNAL ISOLATED TRANSMITTER FAST-RESPONSE FEATURES □ Accuracy: ±0.1%RO. O W i d ; inpu t s n d o u tp u t fa n g s se le ctio n □ S tead y voltage, current lo w fippie output ¡3 F a s t-re s p o n s e ; 5 0 0 ^ s □ Plug-in ty p e M ODEL: S4 a OC IntptU Range
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20rnA
20-4mA
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