HF10D120ACE
Abstract: No abstract text available
Text: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits
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Original
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4330A
HF10D120ACE
150mm
12-Mar-07
HF10D120ACE
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PDF
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HF20D120ACE
Abstract: No abstract text available
Text: PD - 94331B HF20D120ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation
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Original
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94331B
HF20D120ACE
150mm
12-Mar-07
HF20D120ACE
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PDF
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IRF1010
Abstract: IRFB13N50A
Text: PD - 94339 IRFB13N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) max ID 0.450 Ω 14A 500V Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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Original
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IRFB13N50A
O-220AB
12-Mar-07
IRF1010
IRFB13N50A
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PDF
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Alternator regulator
Abstract: AN-994 IRF3808L IRF3808S 94338 IRF380
Text: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
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Original
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4338A
IRF3808S
IRF3808L
106AV
Alternator regulator
AN-994
IRF3808L
IRF3808S
94338
IRF380
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
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Original
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4338A
IRF3808S
IRF3808L
106AV
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94334B IRHF57133SE JANSR2N7497T2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/706 5 TECHNOLOGY Product Summary Part Number IRHF57133SE Radiation Level RDS(on) ID 100K Rads (Si) 0.1Ω 10.5A QPL Part Number JANSR2N7497T2
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Original
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94334B
IRHF57133SE
JANSR2N7497T2
MIL-PRF-19500/706
MIL-STD-750,
MlL-STD-750,
O-205AF
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PDF
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IRHF57133SE
Abstract: JANSR2N7497T2
Text: PD - 94334B IRHF57133SE JANSR2N7497T2 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/706 5 TECHNOLOGY Product Summary Part Number IRHF57133SE Radiation Level RDS(on) ID 100K Rads (Si) 0.1Ω 10.5A International Rectifier’s R5TM technology provides
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Original
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94334B
IRHF57133SE
JANSR2N7497T2
MIL-PRF-19500/706
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF57133SE
JANSR2N7497T2
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PDF
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typical diode
Abstract: hexfred gen3 HF20D120ACE
Text: PD - 94331 HF20D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance
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Original
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HF20D120ACE
125mm
IRGB8B120K
typical diode
hexfred gen3
HF20D120ACE
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits
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Original
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4330A
HF10D120ACE
150mm
IRGB5B120K
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PDF
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hexfred gen3
Abstract: typical diode gen3 HF20D120ACE CR diode transient
Text: PD - 94331A HF20D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V I F nom =8A VF(typ)= 1.85V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •
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Original
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4331A
HF20D120ACE
125mm
IRGB8B120K
hexfred gen3
typical diode
gen3
HF20D120ACE
CR diode transient
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PDF
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HF10D120ACE
Abstract: No abstract text available
Text: PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • •
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Original
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HF10D120ACE
125mm
IRGB5B120K
HF10D120ACE
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94331B HF20D120ACE Hexfred Die in Wafer Form Features GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation
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Original
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94331B
HF20D120ACE
150mm
IRGB8B120K
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PDF
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DIODE marking ED 78A
Abstract: ED 78A IRF140 AN-994 IRF1407L IRF1407S irf1407
Text: PD -94335 IRF1407S IRF1407L Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Advanced HEXFET Power MOSFETs from International
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Original
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IRF1407S
IRF1407L
100AV
EIA-418.
DIODE marking ED 78A
ED 78A
IRF140
AN-994
IRF1407L
IRF1407S
irf1407
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PDF
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AN-994
Abstract: IRF3808L IRF3808S
Text: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
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Original
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4338A
IRF3808S
IRF3808L
106AV
AN-994
IRF3808L
IRF3808S
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: PD -94335 IRF1407S IRF1407L Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Advanced HEXFET Power MOSFETs from International
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Original
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IRF1407S
IRF1407L
100AV
EIA-418.
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PDF
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IRF7NA2907
Abstract: No abstract text available
Text: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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Original
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94337B
IRF7NA2907
IRF7NA2907
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94337B HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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Original
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94337B
IRF7NA2907
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94337A HEXFET POWER MOSFET SURFACE MOUNT SMD-2 IRF7NA2907 75V, N-CHANNEL Product Summary Part Number BVDSS IRF7NA2907 75V RDS(on) ID 0.0045Ω 75A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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Original
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4337A
IRF7NA2907
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PDF
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IRF5800
Abstract: IRF5804 IRF5850 SI3443DV
Text: PD - 94333 IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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Original
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IRF5804
IRF5800
IRF5804
IRF5850
SI3443DV
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PDF
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marking code 82A
Abstract: AN-994 IRF3808L IRF3808S marking 106V
Text: PD - 94338A IRF3808S IRF3808L AUTOMOTIVE MOSFET Typical Applications ● ● HEXFET Power MOSFET Integrated Starter Alternator 42 Volts Automotive Electrical Systems D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating
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Original
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4338A
IRF3808S
IRF3808L
106AV
marking code 82A
AN-994
IRF3808L
IRF3808S
marking 106V
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PDF
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IRF5820
Abstract: IRF5800 IRF5804 SI3443DV IRF5851 IRF5806 irf5852 sot-23 MARKING CODE 3d
Text: PD - 94333A IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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Original
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4333A
IRF5804
OT-23.
IRF5820
IRF5800
IRF5804
SI3443DV
IRF5851
IRF5806
irf5852
sot-23 MARKING CODE 3d
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PDF
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IRF5820
Abstract: 94333 IRF5800 IRF5804 SI3443DV k 9632 sot-23 MARKING CODE 3d
Text: PD - 94333B IRF5804 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from
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Original
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94333B
IRF5804
OT-23.
IRF5820
94333
IRF5800
IRF5804
SI3443DV
k 9632
sot-23 MARKING CODE 3d
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PDF
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Untitled
Abstract: No abstract text available
Text: litem:i INFRARED REMOTE CONTROL RECEIVER MODULES LTM-9433 SERIES TOP VIEWING FEATURES • EASY T O HANDLE SMALL TY P E MODULE • EXC ELLENT M ECH A N IC ALLY S TR E N G TH AND ELECTRICAL STABILITY . CAN BE INSTALLED D IR E CTLY TO E Q U IP M E N T • R E C EIVE IN FR A R ED M O D U LATED PULSES
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OCR Scan
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LTM-9433
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PDF
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Untitled
Abstract: No abstract text available
Text: WITH DIMPLE IN CONTACT AREA Cod.94334-X004 WITHOUT DIMPLE IN CONTACT AREA Cod.94334-X014 — 6.83 *0-25 — — I 4,3 >025 -R1.33 R0.62 _ J Q I— 0.80 COPLANARITY TO BE 0.10 MAX [FROM SETTING PLANE 5.22*025 RECOMMENDED PCB LAY-OUT AND PART POSITIONING ONTO THE PCB
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OCR Scan
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94334-X004
94334-X014
06MIN
C52XJ0
SD-94334-007
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PDF
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