HSB124S
Abstract: DSA003642
Text: HSB124S Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-488A Z Rev. 1 Dec. 1999 Features • Low reverse current.(IR= 0.01µAmax) • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information
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HSB124S
ADE-208-488A
HSB124S
DSA003642
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1SS86
Abstract: ADE-208-186B diode hitachi schottky DSA003641
Text: 1SS86 Silicon Schottky Barrier Diode for UHF TV Tuner Mixer ADE-208-186B Z Rev. 2 Oct. 2000 Features • Low capacitance. (C = 0.85 pF max) • High reliability with glass seal. Ordering Information Type No. Cathode band 2nd band Mark Package Code 1SS86
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1SS86
ADE-208-186B
DO-35
1SS86
ADE-208-186B
diode hitachi schottky
DSA003641
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HSD276A
Abstract: diode hitachi schottky DSA003640
Text: HSD276A Silicon Schottky Barrier Diode for Detector ADE-208-1385 Z Rev.0 Jul. 2001 Features • High forward current, Low capacitance. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code
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HSD276A
ADE-208-1385
HSD276A
diode hitachi schottky
DSA003640
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mx 362-0
Abstract: LV432403X63A400 29450 SCHNEIDER LV432757 Schneider NSX 400 F schneider NS1250 MICROLOGIC 2.0 LV431411X62A250 EZC100N3040 LV4A3F100100B4 LV429270
Text: Price List Low Voltage Distribution Products With effect from February 01, 2013 Price List Contents Prisma iPM: A range of Kit based LV panels . . . . . . . . . . . . . 1 EasyPact EZC: b MCCBs for Distribution Network . . . . . . . . . . . . . . . . . . . . . . 3
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HSB276S
Abstract: DSA003643
Text: HSB276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-780 Z Rev. 0 Mar. 1999 Features • High forward current, Low capacitance. • HSB276S which is interconnected in series configuration is designed for balanced mixer use. • CMPAK package is suitable for high density surface mounting and high speed assembly.
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HSB276S
ADE-208-780
HSB276S
DSA003643
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Hitachi DSA0076
Abstract: 170H 200H 376H 377H 400H HB28E016C6
Text: HB28E016C6 CompactFlash 16 MByte ADE-203-1274 Z Preliminary Rev. 0.0 May. 22, 2001 Description HB28E016C6 is CompactFlash™. This card complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for PC or any other electric equipment and digital still camera.
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HB28E016C6
ADE-203-1274
HB28E016C6
Hitachi DSA0076
170H
200H
376H
377H
400H
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170H
Abstract: 200H 400H HB28D032A8HSR HB28D096A8HSR
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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170H
Abstract: 200H 400H HB28D032C6 HB28D096C6 DSA003633
Text: HB28D096C6/HB28D032C6 CompactFlash 96 MByte/32 MByte ADE-203-1291A Z Rev. 1.0 Jan. 22, 2002 Description HB28D096C6, HB28D032C6 are CompactFlash™. This card complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for PC or any other electric equipment and
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HB28D096C6/HB28D032C6
MByte/32
ADE-203-1291A
HB28D096C6,
HB28D032C6
170H
200H
400H
HB28D096C6
DSA003633
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Hitachi DSA0076
Abstract: 170H 200H 400H HB28C016A6 HB28C032A6 HB28C048A6
Text: HB28C048A6/HB28C032A6 HB28C016A6 FLASH ATA Card 48 MByte/32 MByte/16 MByte ADE-203-1190B Z Rev. 2.0 Mar. 30, 2001 Description HB28C048A6, HB28C032A6, HB28C016A6 are Flash ATA card. This card complies with PC card ATA standard and is suitable for the usage of data storage memory medium for PC or any other electric equipment.
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HB28C048A6/HB28C032A6
HB28C016A6
MByte/32
MByte/16
ADE-203-1190B
HB28C048A6,
HB28C032A6,
HB28C016A6
Hitachi DSA0076
170H
200H
400H
HB28C032A6
HB28C048A6
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Hitachi DSA00279
Abstract: No abstract text available
Text: HB28D096A8H/HB28D032A8H FLASH ATA Card 96 MByte/32 MByte ADE-203-1346A Z Rev. 1.0 May. 31, 2002 Description HB28D096A8H, HB28D032A8H are Flash ATA card. This card complies with PC card ATA standard and is suitable for the usage of data storage memory medium for PC or any other electric equipment. This card is
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HB28D096A8H/HB28D032A8H
MByte/32
ADE-203-1346A
HB28D096A8H,
HB28D032A8H
Hitachi DSA00279
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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john barrel 5.1 home theatre circuit diagram
Abstract: c code for overlap-save convolution SP 5501 hi lite Solar Garden Light YX 805 4 pin DIGITAL ECHO reverb IC 3102 ADSP-1080 HYBRID SYSTEMS ADC 560-3 analogic devices ADSP-1010A Analog Devices Data-Acquisition Databook 1984
Text: by Richard J. Higgins ir DIGITAL SIGNAL PROCESSING IN VLSI by Richard J. Higgins Do it digitally. These days, th is precept goes fa r beyond personal co m p u te rs. DSP a lg o rith m s and te ch n o lo g y have m ade it possible fo r digital te chniques to be used fo r accu
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STK443
Abstract: STK583F STK563f stk audio ic STK 5 channel amp STK439 STK437 Sanyo STK STK 4031 STK-441
Text: SANYO SEMI CONDUCTOR 7997076 CORP 7b DE§ 7 ^ 7 0 7 ^ SANYO SEMI COND UCTOR CORP STK430 SERIES □ 0 0 1 c] 73 76C S 01973 thick film hybrid IC W -^7^0£,ùf D C IR C U IT D R A W IN G N o .B Q O B —B O O B 2-CHANNEL 5 TO 25W M IN AF POWER AMP. 401 0 Features
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QG1C173
STK430
25WMIN
STK430III:
STK435:
STK436:
10Wmin.
STK437:
10Wminâ
STK439:
STK443
STK583F
STK563f
stk audio ic
STK 5 channel amp
STK439
STK437
Sanyo STK
STK 4031
STK-441
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STK 4031
Abstract: STK443 stk audio ic STK439 TV vertical section STK-437 STK435 STK430 STK583F STK audio amp
Text: S T K 4 3 0 S E R IE S C IR C U IT D R A W IN G N o .B Q O B -B O O B thick film hybrid IC 2-CHANNEL 5 TO 2 5 W M IN AF POWER AMP. ^ 0 0 3 ^ ^ 4010" ^ 0 0 ^ ^ Features A F o u tp u t power S T K 4 3 0 III: 5W min., STK 433: 5W min., S TK 435: 7 W m in „ S TK 436:
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STK430
25WMIN
STK430III:
STK435:
STK436:
10Wmin.
STK437:
10Wminâ
STK439:
STK441:
STK 4031
STK443
stk audio ic
STK439
TV vertical section
STK-437
STK435
STK583F
STK audio amp
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Untitled
Abstract: No abstract text available
Text: S C IE N T IF IC / M IN I-C IR C U IT S 4TE D flO bflflll s u rfa c e m o u n t, p iu g -m 00013TS Frequency Mixers Sfl4 B S C C Models T - 74-09-01 ASK-2 KK-81 (W-38) (X-65) L E V E L 7 (+ 7 dBm LO, up to +1 dBm RF) c o m p u te r-a u to m a te d p e rfo rm a n c e d a ta
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00013TS
KK-81)
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Untitled
Abstract: No abstract text available
Text: ASP-62727-03 m N0 TES: ^ 1. NON O O O O O O O O S T A N D A R D S T A C K HEIGHT. 2. PA RTS TO BE PACKAGED IN TAPE & REEL. 3. SHEAR TAILS TO DIMENSION SHOWN. 4. « C » REPRESENTS A CRITICAL DIM. .140 REF 1.260 m .262 .4331 Q 12 POS. X .0 3937| - .0 3 9 3 7
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ASP-62727-03
ECN-21702
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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IRFF9131
Abstract: FF9130 RIP 9130
Text: HARRIS I R F F 9 1 3 , I R F F 9 1 I R F F 9 1 3 2 , I R F F 9 1 3 1 3 3 Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 0 5 A F • -5.5A and -6.5A , -8 0 V and -100V BOTTOM VIEW • rp 5|ON = 0 .3 0 ÎÎ and 0 .4 0 0
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-100V
IRFF9130,
IRFF9131,
IRFF9132
IRFF9133
93CS-4330S
92CS-43299
92CS-4330C
IRFF9131
FF9130
RIP 9130
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1rf644
Abstract: 1RF645
Text: [ 2 H A R R IS IRF644, IRF645 IRF646, IRF647 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features TO -22 0 A B TOP VIEW • 13A and 14A, 250V - 275V • rosCon = 0 .2 8 0 and 0 .3 4 fl • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited
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IRF644,
IRF645
IRF646,
IRF647
IRF645,
IRF647
JRF644,
Figure16
1rf644
1RF645
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Untitled
Abstract: No abstract text available
Text: m H a r r is IRFF9230, IRFF9231 IRFF9232, IRFF9233 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Package Features T 0 -2 0 5 A F • - 3 .5 A a n d - 4 .0 A , - 1 5 0 V a n d - 2 0 0 V BOTTOM VIEW • rD S O N = 0 . 8 0 a n d 1 . 2 0 Î Î
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IRFF9230,
IRFF9231
IRFF9232,
IRFF9233
92CS-43300
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ir 9922
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs Crystal specifications The Philips line o f digital decoders requires crystals which m eet specific specifications. P icking a crystal v end or solely on the basis of frequency will not guarantee satisfactory perform ance.
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800000M
576000M
40ppm
20ppm
X-2097-24
A7199B)
ir 9922
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Untitled
Abstract: No abstract text available
Text: 82C87H Semiconductor CMOS Octal Inverting Bus Transceiver March 1997 Features Description • Full Eight Bit Bi-Directional Bus Interface The Harris 82C87H is a high performance CMOS Octal Transceiver manufactured using a self-aligned silicon gate CMOS process Scaled SAJI IV . The 82C87H provides a full
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82C87H
82C87H
80C86,
80C88
100kHz
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Untitled
Abstract: No abstract text available
Text: 10 C FE CONTACT P0INT B0TT0M SIDE) — ' 777777777, INSERTION DEPTH OF FPC SECT. J-J SCALE I5:1 (6.55) (WHEN ACTUATOR IS OPENED) 0 7? 5 F zlI - 5 ' - iT O "j O L & R jS ) (WHEN ACTUATOR IS LOCKED) 3.95 0.6 « -J CM B L—tc A m 30.5 28.0 27.0 25.5 24.5 23.5
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I32-503
EN-02J
MXJ-54
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54132-3092
Abstract: No abstract text available
Text: 132“ 0 I I S D "5 4 m ACTUATOR CKT. NO. I MARK 6.55 (WHEN ACTUATOR IS OPENED) ° h -J 0 7? 3 1n x - 5 ' - £ i , n ' . v ? L £ « g ) (WHEN ACTUATOR IS LOCKED) 3.95 0.6 u B I I EL ° A Î 30.5 28.0 27.0 25.5 24.5 23.5 23.0 22.5 22.0 21.5 20.5 D 29.3 26.8
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SD-54
EN-02JI097)
MXJ-54
54132-3092
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