Contextual Info: Datasheet Operational Amplifiers Input/Output Full Swing High Voltage Operation Low Supply Current CMOS Operational Amplifiers BD7541G BD7541SG BD7542xxx BD7542Sxxx General Descriptions BD7541G/BD7542xxx are high voltage operation input/output full swing CMOS operational amplifiers. BD7541SG/

Contextual Info: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated

MIMMG150DR120UZA

Contextual Info: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG150DR120UA

Contextual Info: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG75SR060UK

Contextual Info: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module

BU7241G

Contextual Info: Datasheet Operational Amplifiers Input/Output Full Swing Low Supply Current CMOS Operational Amplifiers BU7241G BU7241SG BU7242xxx BU7242Sxxx General Description  Operating Supply Voltage Range: +1.8V to +5.5V  Operating Temperature Range: BU7241G, BU7242xxx, BU7244xx

MIMMG200DR120UZA

Contextual Info: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG40H120XB6TN

Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
Contextual Info: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current

MIMMG150DR120UK

Abstract: AC welder circuit diagram
Contextual Info: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG75SR120B

Contextual Info: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module

ADCMP600BRJZ-R2

Abstract: ADCMP600 ADCMP601 ADCMP602 MAX999 jedec MO-203 AA
Contextual Info: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparators ADCMP600/ADCMP601/ADCMP602 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

K4R271669E

Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

32F8020

Contextual Info: ju t 1 « * » SSI 32P4722 jilic o n á tík m í' Pulse Detector & Data Separator A TDK Group/Company Advance Information June 1993 DESCRIPTION FEATURES The SSI 32P4722 is a low power, high performance bipolar device that provides pulse detection, data synchronization, and ENDEC electronics on a single

Contextual Info: XRP9710 and XRP9711 Dual 6A Programmable Power Module Rev. 1.0.1 January 2014 GENERAL DESCRIPTION FEATURES The XRP9710 and XRP9711 are programmable step down power modules providing two 6A outputs. The module package contains the switching controller, power

HFBR-2522

Contextual Info: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

bt 2323

Abstract: TX-2G
Contextual Info: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe

MP-25

Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

LM358 microphone

Abstract: BC547 lm358 current limiter 1dz 2 BC178B Biopolar Transistor Chips NPN lm358 sum PBL3853 1N4148 BZ-115
Contextual Info: May 1996 PBL 3853 Universal Speech Circuit Description Key Features The PBL 3853 is a biopolar integrated speech circuit with specific parameters making it highly suitable to be used as a line interface and speech circuit in a telephone line powered electronic payphone. Emphasis has been put on low current consumption in

LCMXO2-1200HC-4TG100C

Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
Contextual Info: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1

HSYNC GENERATE PIXEL CLOCK

Abstract: 0mW-10mW
Contextual Info: N LM9627 Color CMOS Image Sensor VGA 30 FPS General Description Applications The LM9627 is a high performance, low power, third inch VGA CMOS Active Pixel Sensor capable of capturing color digital still or motion images and converting them to a digital data stream.

d1409

Abstract: NP40N055CHE NP40N055KHE MP-25 NP40N055DHE NP40N055EHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CHE,NP40N055DHE,NP40N055EHE,NP40N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.