Untitled
Abstract: No abstract text available
Text: Datasheet Operational Amplifiers Input/Output Full Swing High Voltage Operation Low Supply Current CMOS Operational Amplifiers BD7541G BD7541SG BD7542xxx BD7542Sxxx General Descriptions BD7541G/BD7542xxx are high voltage operation input/output full swing CMOS operational amplifiers. BD7541SG/
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BD7541G
BD7541SG
BD7542xxx
BD7542Sxxx
BD7541G/BD7542xxx
BD7541SG/
BD7542Sxxx
BD7541G/BD7542xxx
BD7541SG/BD7542Sxxx
BD7541G/BD7541SG
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Untitled
Abstract: No abstract text available
Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated
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MIMMG150DR120UZA
Abstract: No abstract text available
Text: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG150DR120UZA
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MIMMG150DR120UZA
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MIMMG150DR120UA
Abstract: No abstract text available
Text: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG150DR120UA
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MIMMG150DR120UA
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MIMMG75SR060UK
Abstract: No abstract text available
Text: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module
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MIMMG75SR060UK
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MIMMG75SR060UK
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BU7241G
Abstract: No abstract text available
Text: Datasheet Operational Amplifiers Input/Output Full Swing Low Supply Current CMOS Operational Amplifiers BU7241G BU7241SG BU7242xxx BU7242Sxxx General Description Operating Supply Voltage Range: +1.8V to +5.5V Operating Temperature Range: BU7241G, BU7242xxx, BU7244xx
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BU7241G
BU7241SG
BU7242xxx
BU7242Sxxx
BU7241G,
BU7242xxx,
BU7244xx
BU7241SG,
BU7242Sxxx,
BU7244Sxx
BU7241G
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MIMMG200DR120UZA
Abstract: No abstract text available
Text: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG200DR120UZA
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MIMMG200DR120UZA
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MIMMG40H120XB6TN
Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
Text: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current
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MIMMG40H120XB6TN
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MIMMG40H120XB6TN
1 phase igbt 1200V 40A module
inverter circuit diagram
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MIMMG150DR120UK
Abstract: AC welder circuit diagram
Text: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module
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MIMMG150DR120UK
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Figure13.
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MIMMG150DR120UK
AC welder circuit diagram
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MIMMG75SR120B
Abstract: No abstract text available
Text: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module
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MIMMG75SR120B
Tempera75
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MIMMG75SR120B
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ADCMP600BRJZ-R2
Abstract: ADCMP600 ADCMP601 ADCMP602 MAX999 jedec MO-203 AA
Text: Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparators ADCMP600/ADCMP601/ADCMP602 Fully specified rail to rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch CMOS-/TTL-compatible output stage
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ADCMP600/ADCMP601/ADCMP602
MAX999
ADCMP600/
ADCMP601/
ADCMP602
ADCMP600)
ADCMP602
D05914-0-1/11
ADCMP600BRJZ-R2
ADCMP600
ADCMP601
MAX999
jedec MO-203 AA
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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K4R271669E
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)
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K4R271669E
128Mbit
K4R271669E
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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HFBR-2522
Abstract: No abstract text available
Text: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated
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5964-40027E
AV02-0730EN
HFBR-2522
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IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16640A
16Bits
IS43/46LR16640A
16-bit
-40oC
64Mx16
IS43LR16640A-5BLI
IS43LR16640A-6BLI
60-ball
IS43LR16640A
IS46LR16640A-5BLA1
IS43LR16640A-6BL
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bt 2323
Abstract: TX-2G
Text: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe
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11a/b/g/n
AWL9966
bt 2323
TX-2G
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MP-25
Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N055CLE,
NP88N055DLE,
NP88N055ELE
NP88N055CLE
O-262
O-220AB
NP88N055DLE
O-263
O-220AB)
MP-25
NP88N055CLE
NP88N055DLE
NP88N055ELE
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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16-BIT
M16C/29
REJ09B0101-0112
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LM358 microphone
Abstract: BC547 lm358 current limiter 1dz 2 BC178B Biopolar Transistor Chips NPN lm358 sum PBL3853 1N4148 BZ-115
Text: May 1996 PBL 3853 Universal Speech Circuit Description Key Features The PBL 3853 is a biopolar integrated speech circuit with specific parameters making it highly suitable to be used as a line interface and speech circuit in a telephone line powered electronic payphone. Emphasis has been put on low current consumption in
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3853SO
3853SO-T
S-164
LM358 microphone
BC547
lm358 current limiter
1dz 2
BC178B
Biopolar Transistor Chips NPN
lm358 sum
PBL3853
1N4148
BZ-115
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LCMXO2-1200HC-4TG100C
Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
Text: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1
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HB1010
LCMXO2-1200HC-4TG100C
LCMXO2-256HC-4TG100I
LCMXO2-1200
tn1200
lcmxo2
LCMXO2-1200HC-4TG100
LCMXO2-2000
LCMXO2-7000
MachXO2-1200
LCMXO2-4000HC
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HSYNC GENERATE PIXEL CLOCK
Abstract: 0mW-10mW
Text: N LM9627 Color CMOS Image Sensor VGA 30 FPS General Description Applications The LM9627 is a high performance, low power, third inch VGA CMOS Active Pixel Sensor capable of capturing color digital still or motion images and converting them to a digital data stream.
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LM9627
HSYNC GENERATE PIXEL CLOCK
0mW-10mW
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d1409
Abstract: NP40N055CHE NP40N055KHE MP-25 NP40N055DHE NP40N055EHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CHE,NP40N055DHE,NP40N055EHE,NP40N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP40N055CHE
NP40N055DHE
NP40N055EHE
NP40N055KHE
O-262
NP40N055EHE
O-220AB
NP40N055DHE
NP40N055CHE
O-263
d1409
NP40N055KHE
MP-25
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32F8020
Abstract: No abstract text available
Text: ju t 1 « * » SSI 32P4722 jilic o n á tík m í' Pulse Detector & Data Separator A TDK Group/Company Advance Information June 1993 DESCRIPTION FEATURES The SSI 32P4722 is a low power, high performance bipolar device that provides pulse detection, data synchronization, and ENDEC electronics on a single
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32P4722
32P4722
extern52-Pin
32F8020
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