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    IR 10D Search Results

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    IR 10D Price and Stock

    Infineon Technologies AG S29GL512P10TFIR10D

    IC FLASH 512MBIT PARALLEL 56TSOP
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    DigiKey S29GL512P10TFIR10D Tray
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    Infineon Technologies AG S29GL01GP11TFIR10D

    IC FLASH 1GBIT PARALLEL 56TSOP
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    Sumida Corporation CDEIR10D50MENP-2R2MC

    INDUCTOR
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    DigiKey CDEIR10D50MENP-2R2MC Reel 500
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    Avnet Americas CDEIR10D50MENP-2R2MC Reel 500
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    Mouser Electronics CDEIR10D50MENP-2R2MC
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    Sumida Corporation CDEIR10D50MENP-6R8MC

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    DigiKey CDEIR10D50MENP-6R8MC Reel 500
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    Avnet Americas CDEIR10D50MENP-6R8MC Reel 500
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    Sumida Corporation CDEIR10D50MENP-R22MC

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    DigiKey CDEIR10D50MENP-R22MC Reel 500
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    Avnet Americas CDEIR10D50MENP-R22MC Reel 500
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    Find more IR 10D price and stock on Findchips.com

    IR 10D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UT41656

    Abstract: No abstract text available
    Text: DATA SHEET UM MODEL NO.: SPECIFICATIONS REV. UT41656 MODEM COUPLING TRANSFORMERS B2 Features 00/22 Applications •Surface mount •Low distortion 7mm seated height IEC 950 Reinforced Isolation Withstands 23050C IR Reflow EN60950 certified Telecommunications


    Original     		PDF UT41656 EN60950 UT41656 310ohms 15Kohms 600ohms 20Log E10-007-C

    IN1190A diode

    Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
    Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series


    Original     		PDF 1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 IN1190A diode an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 DT93-1 HFA16PB120

    rpg10

    Abstract: RPG10M RGP10M RGP10A RGP10A-RGP10M
    Text: RGP10A - RGP10M Features • 1.0 min 25.4 1.0 ampere operation at TA = 55°C with no thermal runaway. Dimensions in inches (mm) • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA.


    Original     		PDF RGP10A RGP10M DO-41 rpg10 RPG10M RGP10M RGP10A-RGP10M

    rpg10

    Abstract: RPG10M
    Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.


    Original     		PDF RGP10A-RGP10M RGP10A RGP10M DO-41 rpg10 RPG10M

    Untitled

    Abstract: No abstract text available
    Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.


    Original     		PDF RGP10A-RGP10M RGP10A RGP10M DO-41

    rpg10

    Abstract: RPG10A RPG10M RGP10A RGP10A-RGP10M RGP10M
    Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.


    Original     		PDF RGP10A-RGP10M RGP10A RGP10M DO-41 rpg10 RPG10A RPG10M RGP10A-RGP10M RGP10M

    RPG10A

    Abstract: rpg10 RGP10A RGP10A-RGP10M RGP10M RPG10M
    Text: RGP10A-RGP10M RGP10A - RGP10M Features • 1.0 ampere operation at TA = 55°C with no thermal runaway. • High temperature metallurgically bonded construction. • Glass passivated cavity-free junction. • Typical IR less than 1µA. • Fast switching for high efficiency.


    Original     		PDF RGP10A-RGP10M RGP10A RGP10M DO-41 RPG10A rpg10 RGP10A-RGP10M RGP10M RPG10M

    88613

    Abstract: GBPC610 J-STD-002B GBPC6005 gbpc601
    Text: GBPC6005 thru GBPC610 VISHAY Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 6A VRRM 50 V to 1000 V IFSM 175 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBPC6 ~ ~ ~ ~ Features Mechanical Data


    Original     		PDF GBPC6005 GBPC610 UL-94V-0 J-STD-002B MIL-STD-750, E54214 10-Dec-04 88613 GBPC610 gbpc601

    TCRT5000

    Abstract: d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint
    Text: TCRT5000 L Reflective Optosensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.


    Original     		PDF TCRT5000 D-74025 10-Dec-97 d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint

    Untitled

    Abstract: No abstract text available
    Text: IMAGE REJECT MIXERS LO Frequency MHz +10 dBm (1) RF Frequency (MHz) -10dBm 810-830 (2) Power (dBm) nom. Conversion Loss (dB) max. 1 dB Comp. Pt. (dBm) min. Image Rejection (dBc) min. LO + IF +10 9.0 +3 25 IR-01-F 865-900 LO ± IF +10 9.0 +3 25 IR-02-F 935-960


    OCR Scan     		PDF -10dBm IR-01-F IR-02-F IR-03-F IR-04-F IR-05-F IR-06-F IR-07-F IR-09-F IR-09-F

    transistor 6cw

    Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
    Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown


    OCR Scan     		PDF IRH7450 IRH845Q 1x106 1x105 IRH7450, IRH84S0 transistor 6cw 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier

    Untitled

    Abstract: No abstract text available
    Text: r e i r o ir c ir Product Specifications July 1995 1 of 4 CAS2403 2.4 to 2.5 GHz Power Amplifier-T/R Switch Features □ +20 dBm Output Power □ Power Control □ PCMCIA Compatible Functional Block Diagram 8 - 6 5 4 3 2 1 - R F -e Applications □ Wireless LANs


    OCR Scan     		PDF CAS2403 CAS2403

    MAD1103P

    Abstract: MAD1108P MAD130P MOTOROLA MAD1103P
    Text: MAD130P* MAD1103P* MAD1107P* MAD1108P* MAXIMUM RATINGS fa125°C Fre e -A ir Tem pe ra tu re u n le ss o th e rw ise noted. Rating Peak Reverse V o lta g e d ) Stead y-S tate Re ve rse V olta g e Peak Fo rw a rd C urre n t at lo r b elow ) 25°C Free-A ir


    OCR Scan     		PDF fa125 MAD130P* MAD1103P* MAD1107P* MAD1108P* MAD1108P MAD130P MAD1103P, MAD1107P MAD1103P MOTOROLA MAD1103P

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    TEA1060

    Abstract: A1094 DIP28 PCA1070 S028 TEA106X TEA1094 TEA1094T
    Text: IN TEG R A TED C IR C U ITS Product specification File under Integrated Circuits, IC03 August 1994 Philips Semiconductors PHILIPS PHILIPS 711002b 0076337 EÛT This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Product specification


    OCR Scan     		PDF TEA1094 711002b 711032b TEA1060 A1094 DIP28 PCA1070 S028 TEA106X TEA1094 TEA1094T

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    TO8c

    Abstract: No abstract text available
    Text: — -rJ'k ^onuonn 2/99 ‘ COMPONENTS / Ir AC281 AC282 10 TO 250 M H z TO-8 C ASC AD AB LE A M P LIFIER S Typical Values Low Noise Figure. High Gain. High Output L evel.


    OCR Scan     		PDF AC281 AC282 AC281 AC281/AC282 AC282 TO8c

    Untitled

    Abstract: No abstract text available
    Text: •I 4 0 5 5 4 5 2 O O l b l b l 7T2 ■ INR Other Products From IR Rectifiers Ultra-Fast Recovery INTERNATIONAL RECTIFIER, 1 to 25 Amps * 100F1 10DF2 100F4 100F6 100F8 100 200 400 600 800 iFSMm •HhJC ’f(* v ) « (0 Hz DC CO on (A) (°C/W) (M) 25 25


    OCR Scan     		PDF 100F1 11DF1 11DF2 11DF3 11DF4 300F1 30DF2 300F4 300F6 31DF1

    MCE 2000

    Abstract: No abstract text available
    Text: SURFACE MOUNT PIN DIODE ATTENUATOR MODEL PI-810 150-2000 MHz FEATURES: • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ir Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics


    OCR Scan     		PDF PI-820 PI-810 24dBm MCE 2000

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER UNCONTROLLED DOCUMENT SSF-LXH2300ID5V-LM REV. ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 X MIN VOTESI PEAK WAVELENGTH 1. S S L -L X 3 0 6 F 4 ID -5 V , RED L E D . S REVERSE VOLTAGE f t ir w a SS H -LX 23 0 0 , BLACK HOLDER.: UNITS Vr l r =10D jA


    OCR Scan     		PDF 5SL-LX306F41D-5V, SSH-LX2300, SSF-LXH2300ID5V-LM

    10D-11

    Abstract: No abstract text available
    Text: tfûPulse •S Electronics nnnn Electrical @ 25°C PARAMETER TURNS RATIO SPECIFICATIONS ISOLATION RESISTANCE IR AT 500 VDC 10G OHM MIN. DC RESISTANCE 0.2 OHMS MAX INDUCTANCE (0CL) ( DATE CODE d d d d 68 uH MIN (MEASURED AT 100 KHz, 20 mVRMs) BETWEEN CHANNEL


    OCR Scan     		PDF 23Z104SMNL 23Z104SM 10D-11

    LAN83C180

    Abstract: TX100 ADAPTIVE equalizer SCRAMBLE
    Text: LANÔ3C180 s ir ic PRELIMINARY e STANDARD MICROSYSTEMS CORPORATION 10/100 FAST ETHERNET PHY TRANSCEIVER FEATURES Integrated 10/100 Mb/s Ethernet PHY in a Single Chip Solution Full Mil Interface for a Glueless MAC Connection Half Duplex and Full Duplex in Both


    OCR Scan     		PDF LAN83C180 10BASE-T 100BASE-TX 10BASE-T 100BASE-TX 100BASE-TXs LAN83C180 TX100 ADAPTIVE equalizer SCRAMBLE

    DOT30B

    Abstract: BYg 25 D0214AC
    Text: Tem ic S em iconductors Rectifiers Electrical Characteristics lg a tîjl> 25°C 150°C fe a t V8S*!t V'• A ' at Ip A jtA fiA 30 1 i o 2 ! V A li 1 at ip, US A 4 0.5 Ir A a&dig A Package 0.25 D 0214A C Standard Rectifiers in D0214AC I BYG 10D 200 1.5 BYGIOG


    OCR Scan     		PDF D0214AC DOT30B BYT41A BYT41B BYT41D BYT41G BYT41J BYT41K BYT41M DOT30B BYg 25 D0214AC

    FBU4K

    Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
    Text: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL


    OCR Scan     		PDF 1N4001 N4001 1N4001G 4001L 1N4002 1N4002G 1N4002GL 1N4002L 1N4003 FBU4K FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406