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    Swissbit SFSA064GM3AA4TO-I-QC-626-STD

    SSD 64GB M.2 SLC SATA III 3.3V
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    DigiKey SFSA064GM3AA4TO-I-QC-626-STD Tray 1
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    Mouser Electronics SFSA064GM3AA4TO-I-QC-626-STD
    • 1 $762.98
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    Newark SFSA064GM3AA4TO-I-QC-626-STD Bulk 1
    • 1 $771.78
    • 10 $750.19
    • 100 $707.01
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    Swissbit SFSA064GM1AA4TO-I-QC-616-STD

    SSD 64GB M.2 SLC SATA III 3.3V
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    DigiKey SFSA064GM1AA4TO-I-QC-616-STD Tray
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    IQC6 Datasheets Context Search

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    MAS 10 RCD

    Abstract: PJ 3139
    Text: Â I W M H S I 1 D M F K IM lÄ ,irD @ M In te l8 225636 256K x 36-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range _ P a ra m e te rs 2 2 5 6 3 6 -0 8 2 2 5 6 3 6 -1 0 Units A c c e s s T im e fro m RAS tRAc


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    PDF 36-BIT 72-Pin eig0837-8 MAS 10 RCD PJ 3139

    Untitled

    Abstract: No abstract text available
    Text: IBM11S4325BP IBM11S4325BM 4M x 32 SO D IM M M odule Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAc RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 20ns 30ns 35ns U a Access Time From Address ìrc Cycle Time tHPC EDO Mode Cycle Time


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    PDF IBM11S4325BP IBM11S4325BM 72-Pin 104ns 124ns 50H4745 SA14-4458-01

    Untitled

    Abstract: No abstract text available
    Text: KM41C258 J CMOS DRAM 2 5 6 K x 1 Bit C M O S Dynamic R A M with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C258 is a CMOS high speed 262,144 b i t x 1 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high pe rform ance ap p lica tio n s


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    PDF KM41C258 KM41C258-7 KM41C258-8 KM41C258-10 100ns 130ns 150ns 180ns KM41C258

    Untitled

    Abstract: No abstract text available
    Text: IBM11S4360DN IBM11S4360DL 4M x 36 SODIMM M odule Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: tRAC RAS Access Time ICAC CAS Access Time -60 -70 60ns 70ns 15ns 20ns Iaa Access Time From Address 30ns 35ns I rc Cycle Time 110ns 130ns


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    PDF IBM11S4360DN IBM11S4360DL 72-Pin 256ms 110ns 130ns IBM11S4360DN/L 72-pised 07H4996 MMDJ01DSU-00

    MSM5117805A

    Abstract: No abstract text available
    Text: O K I Semiconductor_ M S M 5 1 1 7 8 0 5 A _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power


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    PDF MSM5117805A_ 152-Word MSM5117805A 28-pin cycles/32

    sti 1320

    Abstract: iqc6
    Text: STI36161OOA 72-PIN SIMMS 16M X 36 Bits DRAM SIMM with Fast Page Mode FPM FEATURES GENERAL DESCRIPTION Performance range: tRC tRAC tCAC STI.-60X 60ns 15ns 110ns 40ns STI.-70X 70ns 20 ns 130ns 45ns The STI3616100A is a 16M x 36 bit Dynamic RAM (DRAM) high density memory m odule. The Sim ple Technology


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    PDF STI36161OOA 72-PIN STI3616100A 32-pin 400-mil 300-mil STI3616100A-xxG STI36161 STI3616100A60x sti 1320 iqc6

    MAS 10 RCD

    Abstract: cas number ci
    Text: infer 251236 512K x 36-BIT DYNAMIC RAM MEMORY MODULE WITH PAGE MODE • Performance Range Parameters Acces Time from RAS Iraq Access Time from CAS (tcAc) Read Cycle Time (tRc) 251236-08 80 20 150 512K x 36-Bit Organization Industry Standard Pin-Out in a 72-Pin


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    PDF 36-BIT 72-Pin MAS 10 RCD cas number ci

    ICE ICC3

    Abstract: KMM581000A-8 KMM581000A-10 KMM581000A10 km41c1000aj 30-pin simm memory KMM481000A-8
    Text: SAMSUNG S EM ICONDUCTOR INC E3E D • 7^4142 000Ô523 S ■ T KMM481000A/KMM581000A - ï b - Z Z - l ' ? MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are


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    PDF KMM481000A/KMM581000A KMM481000A KMM581000A KM41C1000AJ 20-pin 22/iF KMM481000A/KMM581OOOA M481000A/KM ICE ICC3 KMM581000A-8 KMM581000A-10 KMM581000A10 30-pin simm memory KMM481000A-8

    Untitled

    Abstract: No abstract text available
    Text: CELESTICA 2M x 32 EDO SOOIMM FEATURES • • • 72-pin industry standard four-byte small outline dual-in-line memory module JEDEC compliant: 21 -C, Fig. 4-15 Release 6 No. 95 M0-160 High performance, CMOS Single 3.0 ± 0.3V power supply LVTTL-compatible inputs and outputs


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    PDF 72-pin M0-160 20431C) 16211C